Abstract: There is provided an image processing apparatus capable of preventing colors from changing while being displayed when images are combined. The image processing apparatus according to an embodiment includes a video graphic processor that combines a plurality of image signals to generate a combined image signal and an HDMI Tx that transmits, when the combined image signal is transmitted, an identification flag of one of a first color space standard and a second color space standard having a color gamut wider than a color gamut of the first color space standard as the color space standard of the combined image signal and a host CPU decides the first or second color space standard so as to prevent change in color while being displayed.

Abstract: A process for production of titanium alloy material has steps of hydrogenating titanium alloy material to generate hydrogenated titanium alloy; grinding, sifting and dehydrogenating the hydrogenated titanium alloy powder to generate titanium alloy powder; adding at least one of copper powder, chromium powder or iron powder to obtain titanium alloy complex powder; consolidating the titanium alloy complex powder by CIP process and subsequent HIP process, or by HIP process after filling the titanium alloy complex powder into a capsule. In addition, titanium alloy complex powder and titanium alloy material produced by the process are provided.

Abstract: Titanium alloy complex powder is yielded by hydrogenating titanium alloy raw material to generate hydrogenated titanium alloy, grinding and sifting it to obtain hydrogenated titanium alloy powder, adding ceramic powder selected from SiC, TiC, SiOx, TiOx (here, index x is a real number which is in 1?x?2) and Al2O3, and dehydrogenating the mixture of the hydrogenated titanium alloy powder and the ceramic powder. In addition, consolidated titanium alloy material is obtained by CIP process and subsequent HIP process to the titanium alloy complex powder or by HIP process after filling the titanium alloy complex powder into capsule.

Abstract: There is provided an image processing apparatus capable of preventing colors from changing while being displayed when images are combined. The image processing apparatus according to an embodiment includes a video graphic processor 12 that combines a plurality of image signals to generate a combined image signal and an HDMI Tx 14 that transmits, when the combined image signal is transmitted, an identification flag of one of a first color space standard and a second color space standard having a color gamut wider than a color gamut of the first color space standard as the color space standard of the combined image signal and a host CPU 13 decides the first or second color space standard so as to prevent change in color while being displayed.

Abstract: A design support apparatus includes a unit that inputs a user net list created by using hard macro cells excluding test circuits, and a unit that arranges hard macro cells using a frame into which hard macro cells, where timing-converged physical information includes test terminals, and test circuits are embedded as arrangement/wiring information. Moreover, includes a unit that arranges and wires the test circuits using the arrangement/wiring information of the test circuit embedded into the frame, a unit that recognizes arrangement/wiring information where the arrangement/wiring information of the test circuits is removed from arrangement/wiring information obtained by wiring, and a unit outputs a net list of a logic structure.

Abstract: A titanium oxide photocatalyst obtained by hydrolyzing or neutralizing with an alkali an aqueous solution of titanium chloride to obtain a solid component, incorporating sulfur or a sulfur-containing compound in any step of the process, and baking the solid containing the sulfur or sulfur-containing compound. The titanium oxide photocatalyst can be efficiently produced in an industrial production scale and has a high photocatalytic activity in a visible-light region.

Abstract: There is provided copper targets for sputtering capable of forming a deposition film with low electric resistance indispensable for high-speed operation elements and also with excellent thickness uniformity, and such thin copper films. A high-purity copper sputtering target is characterized by comprising up to 0.1 ppm each Na and K, up to 1 ppm each Fe, Ni, Cr, Al, Ca, Mg, up to 5 ppm each carbon and oxygen, up to 1 ppb each U and Th, and, excluding gaseous constituents, more than 99.999% copper. Preferably the average grain size on the sputter surface is 250 &mgr;m or below, with its dispersion thin plus or minus 20%. I(111)/I(200) of X-ray diffraction peak intensity on the sputter plane is at least 2.4 with its dispersion within plus or minus 20%.

Abstract: Metal silicide targets are provided for sputtering which have a density of at least 99%, no more than one coarse silicon phase 10 .mu.m or larger in size that appears, per square millimeter, on the sputter surface, and an oxygen content of at most 150 ppm. They are made by a method which comprises finely grinding a synthesized silicide powder, vacuum annealing the finely ground powder in a hot press die without the application of pressure, and thereafter compacting and sintering the compact to a density of at least 99% by hot pressing. Alternatively, the finely ground powder is vacuum annealed as a presintered body at a density ratio of 50 to 75%, and thereafter is compacted and sintered.

Abstract: A chip coil includes an insulating substrate on which a spiral coil conductor and first and second terminal electrodes are formed. The coil conductor and the terminal electrodes are made by forming a conductive film on the whole of both main surfaces of the insulating substrate and then etching the same. A first insulation film made of polyimide or polyamide is formed on the insulating substrate so as to cover the coil conductor and the terminal electrodes. The first insulation film is etched such that portions corresponding to the terminal electrodes are removed and a throughhole is formed at a portion corresponding in position to the inner most end of the coil conductor. A further conductive film is formed on the first insulation film and etched so as to form a connecting conductor, the ends of which are respectively connected to the inner most end of the coil conductor and the second terminal electrode through the throughhole.

Abstract: Silicide targets for sputtering which have an area ratio of silicon phases that appear on the sputter surface of no more than 23%, and a density of at least 99%, with a deformed layer partly removed from the surface to attain a surface roughness of from more than 0.05 .mu.m to 1 .mu.m, preferably with the number of coarse silicon phases at least 10 .mu.m in diameter that appear on the sputter surface being at most 10/mm.sup.2. The reduction of early-stage particle generation, in turn, reduces secondary particle generation, thus realizing the reduction of particle generation at both early stage and stabilized stage. A Si powder having a maximum particle diameter of no more than 20 .mu.m is mixed with a metal powder having a maximum particle diameter of no more than 60 .mu.m, in a rather Si-lower mixing ratio. A silicide powder is synthesized from the mixture and hot pressed, the sintered compact being machined and surface treated for the removal of the deformed layer.

Abstract: Metal silicide targets are provided for sputtering which have a density of at least 99%, no more than one coarse silicon phase 10 .mu.m or larger in size that appears, per square millimeter, on the sputter surface, and an oxygen content of at most 150 ppm. They are made by a method which comprises finely grinding a synthesized silicide powder, vacuum annealing the finely ground powder in a hot press die without the application of pressure, and thereafter compacting and sintering the compact to a density of at least 99% by hot pressing. Alternatively, the finely ground powder is vacuum annealed as a presintered body at a density ratio of 50 to 75%, and thereafter is compacted and sintered.

Abstract: A process of forming an LC composite part. The process includes the steps of: forming a substrate having a capacitor section by laminating ceramic sheets having a plurality of capacitor electrodes formed thereon such that the ceramic sheets and electrode layers alternate, sintering the substrate, forming a plurality of coil sections on the sintered substrate, cutting the substrate into composite parts, and electrically connecting the capacitor electrode layers with the coil section.

Abstract: A chip coil includes an insulating substrate on which a spiral coil conductor and first and second terminal electrodes are formed. The coil conductor and the terminal electrodes are made by forming a conductive film on the whole of both main surfaces of the insulating substrate and then etching the same. A first insulation film made of polyimide or polyamide is formed on the insulating substrate so as to cover the coil conductor and the terminal electrodes. The first insulation film is etched such that portions corresponding to the terminal electrodes are removed and a throughhole is formed at a portion corresponding in position to the innermost end of the coil conductor. A further conductive film is formed on the first insulation film and etched so as to form a connecting conductor, the ends of which are respectively connected to the innermost end of the coil conductor and the second terminal electrode, through the throughhole.

Abstract: A method of plating treatment for forming a plated coating on the surface of a workpiece except on a region thereof comprises the steps of placing a masking member made of water swelling rubber in abutment against or in close proximity to the region of the workpiece where no plating is desired, immersing, in this state, the masking member in water to cause the water swelling rubber to undergo volumetric self-swelling, and immersing the workpiece in a plating solution with the swelled masking member pressed against the particular region of the workpiece.

Abstract: A jet air flow crusher has a guide face formed by the inside surface of an outer wall in which a flat and almost ellipsoidal internal space is defined to guide an ellipsoidal gas phase flow powder grains; a crushing zone in which flowing powder grains are crushed provided on one side of the internal space in the direction of the ellipsoidal major axis; a classifying zone at which flowing powder grains are discharged provided on the other side of the internal space in the direction of the ellipsoidal major axis; a gas phase flow passage defined in the crushing zone by the inside surface of the outer wall and a partition wall; nozzles installed in the outer wall and the partition wall at several locations in the direction of the powder grain flow in the crushing zone to jet out air in a direction substantially corresponding to the powder grain flow for carrying and crushing the powder grains, and flow resisting means for limiting the gas phase flow carrying the powder grains, arranged at least at one location b

Abstract: A method of metallizing a ceramic material by forming a metal thin film through electroless plating, chemically etching the metal thin film after heat treatment and metallizing the surface of the ceramic material through electroless plating after the etching.

Abstract: A ceramic dielectric composition for temperature compensating capacitors comprising 64-70.5% by weight of SrTiO.sub.3, 28-34% by weight of CaTiO.sub.3 and 1.5-4.5% by weight of Bi.sub.2 O.sub.3 or Bi.sub.2 O.sub.3.nTiO.sub.2 (where n=1 to 5). Not more than 10% by weight of MgTiO.sub.3 may be added, as necessary. The composition has high dielectric constant above 235 and Q above 2000 and low temperature coefficient of a dielectric constant up to -1000.times.10.sup.-6 /.degree.C. The ceramic element obtained by the composition has a large adhesion strength to electroless plating electrodes (nickel or copper).