Abstract: The present invention provides a photosensitive resin composition used to form a top resist layer of a multilayer resist system, the composition comprising a photosensitive polyphenylsilsesquioxane represented by the following general formula (I) of: ##STR1## wherein X is selected from the group consisting of acryloyloxymethyl, methacryloyloxymethyl, and cinnamoyloxymethyl; and l, m and n are zero or positive integers but l and m do not take the value of zero simultaneously; and a bisazide compound added to act as a cross-linking agent.The photosensitive resin composition has high sensitivity to UV light and excellent resistance to reactive ion etching under oxygen gas (O.sub.2 RIE).

Abstract: Disclosed is a method for forming micro-patterns on base plates such as for semiconductor integrated circuits, particularly by development, wherein a radiation sensitive negative resist film is formed on the base plate and irradiated according to pattern designs, and the non-irradiated portions of the film is dissolved by a liquid developer comprising a mixture of a good solvent selected from the group of alkyl esters of acetic acid, having an alkyl group containing 1 to 5 carbon atoms, and a poor solvent selected from the group consisting of alicyclic compounds and alkyl ethers of ethyleneglycol having an alkyl group containing 1 to 5 carbon atoms. The method can minimize swelling of irradiated portions of the resist film and can accelerate dissolution of non-irradiated portions of the resist film, so that desired micro-patterns with excellent edge shape quality can be obtained.

Abstract: A resist material of positive type having a high sensitivity, a high resolving power and an excellent adhesion property to substrates, which comprises a copolymer of a fluoroalkyl acrylate having the general formula: ##STR1## wherein R.sub.1 is methyl group, ethyl group, a halogen-substituted methyl or ethyl group, a halogen atom or hydrogen atom, R.sub.2 is a bivalent hydrocarbon group having 1 to 6 carbon atoms, and R.sub.f is a fluoroalkyl group having 1 to 15 carbon atoms, with an acrylic comonomer selected from the group consisting of a glycidyl acrylate, an acrylic acid, an acrylamide and an .alpha.-cyanoacrylate.

Abstract: A pattern forming material contains a siloxane polymer having the general formula: ##STR1## [wherein R, R' and R" are the same or different and are respectively one member selected from hydrogen, an alkyl group or a phenyl group; X is one member selected from fluorine, chlorine, bromine, iodine and a --CH.sub.2 Y group (wherein Y is one member selected from chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and l, m and n are respectively 0 or a positive integer, l and m not being simultaneously 0]. The material has a high sensitivity to high-energy radiation, a high contrast, and an excellent resistance to reactive ion etching under oxygen gas. The material is conveniently used as a negative resist for forming a submicron pattern having a high aspect ratio.

Abstract: A resist material of positive type having a high sensitivity, a high resolving power and an excellent adhesion property to substrates, which comprises a copolymer of a fluoroalkyl acrylate having the general formula: ##STR1## wherein R.sub.1 is methyl group, ethyl group, a halogen-substituted methyl or ethyl group, a halogen atom or hydrogen atom, R.sub.2 is a bivalent hydrocarbon group having 1 to 6 carbon atoms, and R.sub.f is a fluoroalkyl group having 1 to 15 carbon atoms, with an acrylic comonomer selected from the group consisting of a glycidyl acrylate, an acrylic acid, an acrylamide and an .alpha.-cyanoacrylate.

Abstract: A pattern forming material contains a siloxane polymer having the general formula: ##STR1## [wherein R, R' and R" are the same or different and are respectively one member selected from hydrogen, an alkyl group or a phenyl group; X is one member selected from fluorine, chlorine, bromine, iodine and a --CH.sub.2 Y group (wherein Y is one member selected from chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and l, m and n are respectively 0 or a positive integer, l and m not being simultaneously 0]. The material has a high sensitivity to high-energy radiation, a high contrast, and an excellent resistance to reactive ion etching under oxygen gas. The material is conveniently used as a negative resist for forming a submicron pattern having a high aspect ratio.

Abstract: A method for forming a micropattern, comprises the steps of forming an organic polymeric material layer on a substrate, forming a silicone layer on the organic polymeric material layer, selectively irradiating a surface of the silicone layer with a high-energy beam, exposing the surface of the silicone layer to a radical addition polymerizable monomer gas so as to form a graft polymer film on an irradiated portion of the surface of the silicone layer, performing reactive ion etching using the graft polymer film as a mask so as to form a silicone pattern, and performing reactive ion etching using the silicone pattern as a mask so as to form an organic polymeric material pattern. The method allows formation of a resist pattern with a high precision and a high aspect ratio.

Abstract: A matrix-addressed liquid crystal display device including a matrix-addressed display section is provided. The display section comprises a pair of optically transparent plates each of which having on one surface a plurality of parallel strip electrodes optically transparent and deposited through an optically transparent spacer, said pair of plates being parallelly arranged so that the electrodes will be inside and mutually intersect at right angles so as to form row and column electrode groups of a matrix, and a cholesteric phase liquid crystal filled between the respective plates, which liquid crystal being such that when a voltage applied to the electrodes is above a threshold level the molecular axes of the liquid crystal are aligned in the direction of electric field due to the voltage applied.