Abstract: An electrolytically reduced water which consists of an alkali ion water prepared by ion exchange and has a dissolved hydrogen concentration of 0.20 ppm or above, an oxidation-reduction potential of ?150 mV to ?500 mV, and a hydrogen ion component of pH6.5-10.5 and which is quantitatively specified in the reducing power capable of inhibiting the oxidative deterioration of fat in the cutis through the elimination of active oxygen due to the characteristics of hydrogen, the oxidation-reduction potential characteristics of high reducing action, and alkaline characteristics and can activate the skin to inhibit the oxidative deterioration and suppress lumpy fat (cellulite).

Abstract: The production of semiconductor devices manufactured through a plurality of manufacturing sites is unitarily managed and an appropriate production plan is instructed. A computer projects a production plan of an entire company based on various information. The production plan is provided to each manufacturing site as a production instruction and provided to each business person or customer as a storing reply or an order accepting period reply. If the projected production plan (possible production volume) does not coincide with a production plan (necessary production volume), parameters obtained by correcting production allocation, production capability, lead time, yield and the like are re-input from a parameter input terminal. Based on the corrected parameters, the computer re-projects the production plan and projects an optimum production plan.

Abstract: The production of semiconductor devices manufactured through a plurality of manufacturing sites is unitarily managed and an appropriate production plan is instructed. A computer projects a production plan of an entire company based on various information. The production plan is provided to each manufacturing site as a production instruction and provided to each business person or customer as a storing reply or an order accepting period reply. If the projected production plan (possible production volume) does not coincide with a production plan (necessary production volume), parameters obtained by correcting production allocation, production capability, lead time, yield and the like are re-input from a parameter input terminal. Based on the corrected parameters, the computer re-projects the production plan and projects an optimum production plan.

Abstract: The production of semiconductor devices manufactured through a plurality of manufacturing sites is unitarily managed and an appropriate production plan is instructed. A computer projects a production plan of an entire company from necessary information such as a planning and finishing volume and a day's schedule of each of the manufacturing sites, each item and each process for satisfying a demand estimation of a product, order information on the product, and a product volume required to be manufactured which information are collected from a customer computer and a production management computer and the like. The production plan is provided to each manufacturing site as a production instruction and provided to each business person or customer as a storing reply or an order accepting period reply.

Abstract: The production of semiconductor devices manufactured through a plurality of manufacturing sites is unitarily managed and an appropriate production plan is instructed. A computer projects a production plan of an entire company from necessary information such as a planning and finishing volume and a day's schedule of each of the manufacturing sites, each item and each process for satisfying a demand estimation of a product, order information on the product, and a product volume required to be manufactured which information are collected from a customer computer and a production management computer and the like. The production plan is provided to each manufacturing site as a production instruction and provided to each business person or customer as a storing reply or an order accepting period reply.

Abstract: An ohmic electrode is formed on a cBN crystal to form a cBN semiconductor device which is used as a solid electronic element. The cBN semiconductor device may be of an n-type, a p-type or a pn junction type wherein molybdenum is deposited onto an n-type doped region of the cBN crystal or platinum is deposited onto a p-type doped region to thereby form an electrode with ohmic characteristic. The deposition of the molybdenum or the platinum is conducted by using a vapor deposition method followed by heating the attached substance at a temperature of 300.degree. C.-1100.degree. C. in an inactive gas atmosphere. The cBN semiconductor device can be used as a solid electronic element or an optoelectronic element for rectifiers, transistors, light emitting diodes and so on and integrated elements thereof.

Abstract: An ohmic electrode is formed on a cBN crystal to form a cBN semiconductor device which is used as a solid electronic element. The cBN semiconductor device may be of an n-type, a p-type or a pn junction type wherein molybdenum is deposited onto an n-type doped region of the cBN crystal or platinum is deposited onto a p-type doped region to thereby form an electrode with ohmic characteristic. The deposition of the molybdenum or the platinum is conducted by using a vapor deposition method followed by heating the attached substance at a temperature of 300.degree. C.-1100.degree. C. in an inactive gas atmosphere. The cBN semiconductor device can be used as a solid electronic element or an optoelectronic element for rectifiers, transistors, light emitting diodes and so on and integrated elements thereof.

Abstract: A Slide driving apparatus of press machine, wherein a main gear 3 as a rotational drive member and a lever member 10 as a driven member are opposed to one another in a eccentric state which an axes O.sub.1 and O.sub.2 are separated, the main gear 3 and the lever member 10 being connected to one another by a connecting member 13 consisting of a pin member 11 and a bush member 12. A drive rotation locus A which can be traced, round the axis O.sub.1, by a movement of a connecting center O.sub.5 where the main gear 3 and the connecting member 13 are connected, and a driven rotation locus B which can be traced, round the axis O.sub.2, by a movement of a connecting center O.sub.4 where the lever member 10 and the connecting member 13 are connected, intersect one another at points of C and D. A slide of the press machine is connected, by the connecting rod, to an eccentric portion 8A of the crankshaft 8 where the lever member 10 is fixed.

Abstract: A method for growing a single crystal of a cubic boron nitride semiconductor in a growing container sealed under high pressure and high temperature conditions, which comprises dissolving in a dopant-containing boron nitride solvent a boron nitride starting material placed at a high temperature zone in the growing container, and providing a temperature gradient to the solvent so that the temperature dependence of the solubility is utilized to let the single crystal form and grow at a low temperature zone in the growing container.

Abstract: A method for growing a single crystal of cubic boron nitride semiconductor in a growing container sealed under high pressure and high temperature conditions, which comprises dissolving in a dopant-containing boron nitride solvent a boron nitride starting material placed at a high temperature zone in the growing container, and providing a temperature gradient to the solvent so that the temperature dependence of the solubility is utilized to let the single crystal form and grow at a low temperature zone in the growing container.