Abstract: A structural body that includes a film that has a phase-separated nanostructure where a separate columnar shape phase is dispersed in a matrix phase that are phase-separated in a state of thermal equilibrium. The matrix phase is formed from any one of a p-type semiconductor material and an n-type semiconductor material, and the separate columnar shape phase is formed from the other semiconductor material. The film is formed on a substrate such that the separate columnar shaped phase and the matrix phase have three-dimensional junction planes.

Abstract: A structural body that includes a film that has a phase-separated nanostructure where a separate columnar shape phase is dispersed in a matrix phase that are phase-separated in a state of thermal equilibrium. The matrix phase is formed from any one of a p-type semiconductor material and an n-type semiconductor material, and the separate columnar shape phase is formed from the other semiconductor material. The film is formed on a substrate such that the separate columnar shaped phase and the matrix phase have three-dimensional junction planes.

Abstract: In a sheet-type piezoelectric vibrator provided with a piezoelectric sheet made from a transparent organic polymer and electrodes formed on respective main surfaces that are opposite to each other of the piezoelectric sheet, an electrode material that is effectively used for making the vibrator colorless is provided. The first electrodes formed on one of the main surfaces of piezoelectric sheets are made of zinc oxide electrode layers, each mainly containing zinc oxide, and second electrodes formed on the other main surface of the piezoelectric sheets include polythiophene electrode layers made from a conductive polymer containing thiophene in a molecule structure thereof. Although the zinc oxide electrode layer is transparent, it is slightly yellowish, while, on the other hand, although the polythiophene electrode layer is also transparent, it is slightly bluish.

Abstract: In a sheet-type piezoelectric vibrator provided with a piezoelectric sheet made from a transparent organic polymer and electrodes formed on respective main surfaces that are opposite to each other of the piezoelectric sheet, an electrode material that is effectively used for making the vibrator colorless is provided. The first electrodes formed on one of the main surfaces of piezoelectric sheets are made of zinc oxide electrode layers, each mainly containing zinc oxide, and second electrodes formed on the other main surface of the piezoelectric sheets include polythiophene electrode layers made from a conductive polymer containing thiophene in a molecule structure thereof. Although the zinc oxide electrode layer is transparent, it is slightly yellowish, while, on the other hand, although the polythiophene electrode layer is also transparent, it is slightly bluish.

Abstract: A ZnO-based transparent conductive film is produced by growing ZnO doped with a group III element oxide on a substrate and has a region with a crystal structure in which a c-axis grows along a plurality of different directions. The transparent conductive film produced by growing ZnO doped with a group III element oxide on a substrate has a ZnO (002) rocking curve full width at half maximum of about 13.5° or more. ZnO is doped with a group III element oxide so that the ratio of the group III element oxide in the transparent conductive film is about 7% to about 40% by weight. The transparent conductive film is formed on the substrate with a SiNx thin film provided therebetween. The transparent conductive film is formed on the substrate by a thin film formation method with a bias voltage applied to the substrate.

Abstract: A ZnO-based transparent conductive film has practicable moisture resistance, desired characteristics of a transparent conductive film, and excellent economy. The transparent conductive film is produced by growing ZnO doped with a group III element oxide on a substrate and has a region with a crystal structure in which a c-axis grows along a plurality of different directions. The transparent conductive film produced by growing ZnO doped with a group III element oxide on a substrate has a ZnO (002) rocking curve full width at half maximum of about 13.5° or more. ZnO is doped with a group III element oxide so that the ratio of the group III element oxide in the transparent conductive film is about 7% to about 40% by weight. The transparent conductive film is formed on the substrate with a SiNx thin film provided therebetween. The transparent conductive film is formed on the substrate by a thin film formation method with a bias voltage applied to the substrate.

Abstract: A piezoelectric thin-film resonator includes a first excitation electrode and a second excitation electrode, the first excitation electrode being disposed opposite the second excitation electrode; a piezoelectric thin film disposed between the first excitation electrode and the second excitation electrode; and a substrate supporting the first excitation electrode, the substrate being composed of a LiTaO3 single crystal or a LiNbO3 single crystal, the first excitation electrode including an acoustic reflecting layer, the acoustic reflecting layer containing (a) at least one epitaxially grown first sublayer being composed of a conducting material and having a relatively high acoustic impedance; and (b) at least one epitaxially grown second sublayer being composed of another conducting material and having a relatively low acoustic impedance.

Abstract: A surface acoustic wave device includes a piezoelectric substrate and interdigital electrodes disposed on the piezoelectric substrate, wherein each of the interdigital electrodes includes a main electrode layer made of Cu or an alloy that has Cu as its main component. The surface acoustic wave device also includes a tightly adhering layer which is disposed between the main electrode layer and the piezoelectric substrate and whose main component is NiCr, or a tightly adhering layer whose main component is Ti and whose film thickness is within a range of about 18 nm to about 60 nm.

Abstract: A piezoelectric substrate is provided with interdigital transducer electrodes including a first electrode layer, a second electrode layer, and a third electrode layer that is principally made of aluminum. The piezoelectric substrate has a stepped structure on the surface of the piezoelectric substrate, the stepped structure including terraces each having a width of about 50 nm or less and steps each having a width of a mono-molecular layer (e.g., about 14 ?).

Abstract: A surface acoustic wave device has superior electrical power resistance that is obtained by improving stress migration resistance of electrodes. In order to form at least one electrode, for example, on a ? rotation Y-cut (?=36° to 42°) LiTaO3 piezoelectric substrate, an underlying electrode layer including Ti or Cr as a primary component is formed, and an Al electrode layer including Al as a primary component is then formed on this underlying electrode layer. The Al electrode layer is an oriented film grown by epitaxial growth and is also a polycrystalline thin film having a twin structure in which a diffraction pattern observed in an X-ray diffraction pole figure has a plurality of symmetry centers.

Abstract: A surface acoustic wave device includes a piezoelectric substrate and interdigital electrodes disposed on the piezoelectric substrate, wherein each of the interdigital electrodes includes a main electrode layer made of Cu or an alloy that has Cu as its main component. The surface acoustic wave device also includes a tightly adhering layer which is disposed between the main electrode layer and the piezoelectric substrate and whose main component is NiCr, or a tightly adhering layer whose main component is Ti and whose film thickness is within a range of about 18 nm to about 60 nm.

Abstract: A surface acoustic wave device includes a piezoelectric substrate and interdigital electrodes disposed on the piezoelectric substrate, wherein each of the interdigital electrodes includes a main electrode layer made of Cu or an alloy that has Cu as its main component. The surface acoustic wave device also includes a tightly adhering layer which is disposed between the main electrode layer and the piezoelectric substrate and whose main component is NiCr, or a tightly adhering layer whose main component is Ti and whose film thickness is within a range of about 18 nm to about 60 nm.

Abstract: A piezoelectric thin-film resonator includes a first excitation electrode and a second excitation electrode, the first excitation electrode being disposed opposite the second excitation electrode; a piezoelectric thin film disposed between the first excitation electrode and the second excitation electrode; and a substrate supporting the first excitation electrode, the substrate being composed of a LiTaO3 single crystal or a LiNbO3 single crystal, the first excitation electrode including an acoustic reflecting layer, the acoustic reflecting layer containing (a) at least one epitaxially grown first sublayer being composed of a conducting material and having a relatively high acoustic impedance; and (b) at least one epitaxially grown second sublayer being composed of another conducting material and having a relatively low acoustic impedance.

Abstract: A surface acoustic wave device has superior electrical power resistance that is obtained by improving stress migration resistance of electrodes. In order to form at least one electrode, for example, on a ? rotation Y-cut (?=36° to 42°) LiTaO3 piezoelectric substrate, an underlying electrode layer including Ti or Cr as a primary component is formed, and an Al electrode layer including Al as a primary component is then formed on this underlying electrode layer. The Al electrode layer is an oriented film grown by epitaxial growth and is also a polycrystalline thin film having a twin structure in which a diffraction pattern observed in an X-ray diffraction pole figure has a plurality of symmetry centers.

Abstract: A surface acoustic wave device includes a piezoelectric substrate and interdigital electrodes disposed on the piezoelectric substrate, wherein each of the interdigital electrodes includes a main electrode layer made of Cu or an alloy that has Cu as its main component. The surface acoustic wave device also includes a tightly adhering layer which is disposed between the main electrode layer and the piezoelectric substrate and whose main component is NiCr, or a tightly adhering layer whose main component is Ti and whose film thickness is within a range of about 18 nm to about 60 nm.

Abstract: A surface acoustic wave device has superior electrical power resistance that is obtained by improving stress migration resistance of electrodes. In order to form at least one electrode, for example, on a &thgr; rotation Y-cut (&thgr;=36° to 42°) LiTaO3 piezoelectric substrate, an underlying electrode layer including Ti or Cr as a primary component is formed, and an Al electrode layer including Al as a primary component is then formed on this underlying electrode layer. The Al electrode layer is an oriented film grown by epitaxial growth and is also a polycrystalline thin film having a twin structure in which a diffraction pattern observed in an X-ray diffraction pole figure has a plurality of symmetry centers.

Abstract: A piezoelectric substrate is provided with interdigital transducer electrodes including a first electrode layer, a second electrode layer, and a third electrode layer that is principally made of aluminum. The piezoelectric substrate has a stepped structure on the surface of the piezoelectric substrate, the stepped structure including terraces each having a width of about 50 nm or less and steps each having a width of a mono-molecular layer (e.g., about 14 Å).

Abstract: A surface acoustic wave device includes a piezoelectric substrate made of a LiNO3 or LiTaO3 single crystal, and an electrode having power endurance. After a damaged layer formed on a surface of the piezoelectric substrate is removed, an under-electrode layer including at least one of Ti and Cr as a main component is formed by a vacuum deposition process at a temperature of about 100° C. or less, and an Al electrode layer including Al or an Al main component is then formed on the under-electrode layer. The Al electrode layer has a twin crystal structure in which the Al crystal is oriented in a desired direction such that the (111) crystal plane of Al substantially coincides with the Z crystal direction of the piezoelectric substrate.

Abstract: A surface acoustic wave device has superior electrical power resistance that is obtained by improving stress migration resistance of electrodes. In order to form at least one electrode, for example, on a &thgr; rotation Y-cut (&thgr;=36° to 42°) LiTaO3 piezoelectric substrate, an underlying electrode layer including Ti or Cr as a primary component is formed, and an Al electrode layer including Al as a primary component is then formed on this underlying electrode layer. The Al electrode layer is an oriented film grown by epitaxial growth and is also a polycrystalline thin film having a twin structure in which a diffraction pattern observed in an X-ray diffraction pole figure has a plurality of symmetry centers.

Abstract: A surface acoustic wave device includes a piezoelectric substrate made of a LiNO3 or LiTaO3 single crystal, and an electrode having excellent power endurance. After a damaged layer formed on a surface of the piezoelectric substrate is removed, an under-electrode layer including at least one of Ti and Cr as a main component is formed by a vacuum deposition process at a temperature of about 100° C. or less, and an Al electrode layer including Al or an Al main component is then formed on the under-electrode layer. The Al electrode layer has a twin crystal structure in which the Al crystal is oriented in a desired direction such that the (111) crystal plane of Al substantially coincides with the Z crystal direction of the piezoelectric substrate.