Abstract: A first insulating layer is formed on semiconductor substrate, and a trench is formed in the first insulating layer. An amorphous silicon layer doped with impurities is formed on a side and bottom walls of the trench. Next, a resist material is partially filled in the trench so that an upper portion of the amorphous silicon layer is exposed. The exposed portion is implanted with impurity ions. After removal of the resist material, the amorphous silicon layer is heat treated so as to grow hemispherical grains on its surface.

Abstract: A first insulating layer is formed on semiconductor substrate, and a trench is formed in the first insulating layer. An amorphous silicon layer doped with impurities is formed on a side and bottom walls of the trench. Next, a resist material is partially filled in the trench so that an upper portion of the amorphous silicon layer is exposed. The exposed portion is implanted with impurity ions. After removal of the resist material, the amorphous silicon layer is heat treated so as to grow hemispherical grains on its surface.

Abstract: The invention includes a process for the fabrication of semiconductor device, comprising the steps of forming a trench in the interlayer of semiconductor substrate, depositing impurities doped a amorphous silicon served as a lower electrode all over the trench, forming a resist so as to expose the top portion of the amorphous silicon in the trench, etching the amorphous silicon layer except for the trench, implanting impurities into the top portion of the amorphous silicon and growing HSG silicon by means of heat treatment after resist strip.

Abstract: A semiconductor device in which an integrated circuit is formed includes a resistance-measurement area with conductive members disposed in at least two different layers, and an electrode pattern. The electrode pattern includes contact plugs that, depending on their alignment, make electrical contact with different conductive members. Contact alignment error is measured by measuring the electrical resistance between a pair of electrodes in the electrode pattern.

Abstract: A semiconductor device in which an integrated circuit is formed includes a resistance-measurement area with conductive members disposed in at least two different layers, and an electrode pattern. The electrode pattern includes contact plugs that, depending on their alignment, make electrical contact with different conductive members. Contact alignment error is measured by measuring the electrical resistance between a pair of electrodes in the electrode pattern.

Abstract: A semiconductor device in which an integrated circuit is formed includes a resistance-measurement area with conductive members disposed in at least two different layers, and an electrode pattern. The electrode pattern includes contact plugs that, depending on their alignment, make electrical contact with different conductive members. Contact alignment error is measured by measuring the electrical resistance between a pair of electrodes in the electrode pattern.

Abstract: A photosensitive diazo resin-containing photosensitive resin composition for lithographic printing comprising a sensitizing dye having an anion group in a molecule as a counter ion of a diazonium group.

Abstract: Disclosed is a photosensitive diazo resin for lithographic printing represented by the formula: ##STR1## wherein X.sup.- is a counter anion, Y is a divalent bonding group selected from the group consisting of --NH--, --S-- and --O--, R.sub.1, R.sub.2 and R.sub.3 are groups which are independently selected from the group consisting of hydrogen, an alkyl group and an alkoxy group, R.sub.4 and R.sub.5 are groups which are independently selected from the group consisting of hydrogen, an alkyl group and a phenyl group, 1 and m are integers which satisfy the relation:1+m=2 to 100, 1/m=30 to 99/1 to 70and A is a quaternary ammonium salt-containing group represented by the formula: ##STR2## (wherein B is a straight or branched divalent C.sub.1-10 alkyl group which bonds to an aromatic ring by a group selected from the group consisting of --CH.sub.2 --, --CO--, --O--, --S-- and --N--, and R.sub.6, R.sub.7 and R.sub.8 are groups which are independently selected from the group consisting of hydrogen and a C.sub.

Abstract: Disclosed is a photosensitive resin composition which, can be hot melt molding and and is water-developable. The composition does not need the preliminary exposure process and when cured has suitable hardness and printing properties. The photosensitive resin composition comprises;(A) a water soluble or water dispersible polyvinyl alcohol prepared by saponifying a copolymer obtained by copolymerizing 90 to 99.9 mol % of a vinyl ester and 0.1 to 10 mol % of an ionic group-containing monomer; said polyvinyl alcohol having a saponification degree of the vinyl ester unit of 60 to 75 mol % and a hot melt flow starting temperature of 95.degree. to 170.degree. C.,(B) a polymerizable compound prepared by reacting in the presence of an acid catalyst, (i) N-methylol (meth)acrylamide or N-alkoxymethyl (meth)acrylamide and (ii) a compound selected from the group consisting of monoalcohols, polyhydric alcohols, amides, haloalkylamides, aromatic compounds, ureas and mixtures thereof, and(C) a photopolymerization initiator.