Abstract: An output circuit device for detecting and converting signal charge transferred thereto from a charge transfer section of a CCD into a signal voltage and a method of forming same. A first diffusion region is formed by diffusing into the semiconductor body a low concentration of an impurity having a conduction type opposite to that of said semiconductor body and having a high diffusion coefficient. A second diffusion region is formed by diffusing into an upper surface portion of the first diffusion region, and in self-alignment therewith, a high concentration of an impurity having a low diffusion coefficient. A third diffusion region is formed by diffusing into the first and second diffusion regions, and in self-alignment therewith, a high concentration of an impurity having a high diffusion coefficient, such that the third diffusion region extends from a surface of said semiconductor body through said first and second diffusion regions to beneath the first diffusion region.

Abstract: A first diffusion layer in which phosphor of a low concentration is diffused is formed in a semiconductor body, and a second diffusion layer in which arsenic or antimony of a high concentration is formed in a portion of the upper face of the first diffusion layer. Further, a third diffusion layer in which phosphor of a high concentration is formed in the range of the second diffusion layer on the surface of the semiconductor body in a deeper condition than the first diffusion layer is formed.

Abstract: A method for determining a charge/voltage conversion ratio of a solid state image pickup element with an electronic shutter function which is capable of transferring signal charge accumulated in a photosensitive portion to a substrate. A voltage of a predetermined first level is applied to the substrate to measure an output voltage at an output portion, and then a voltage of a second level higher than that of the first level is applied to the substrate to measure a current flowing through the substrate, thereby obtaining a charge/voltage conversion ratio in accordance with a ratio between the measured output voltage and the measured current.

Abstract: An output circuit device for detecting and converting signal charge transferred thereto from a charge transfer section of a CCD into a signal voltage his constructed such that a gate oxide film of a driving side MOS transistor of a first stage source follower which receives signal charge is formed as a thinner film than gate oxide films of the other MOS transistors in the same circuit to reduce the 1/f noise.

Abstract: A CCD imager includes a large number of light receiving sections each having in turn a semiconductor surface region of a second conductivity type, a first semiconductor region of a first conductivity type, a semiconductor region of the second conductivity type and a second semiconductor region of the first conductivity type, vertically. The second semiconductor region is formed by a dual structure of the low concentration semiconductor region and the high concentration semiconductor region. The dual structure provides for shuttering at a lower voltage since the potential barrier along the depth of the light receiving section is no longer affected by the amount of the stored charges, while spreading of the depletion layer at the junction is suppressed by the high concentration semiconductor region.