Abstract: A fuel cell system includes a first electrolyte-electrode assembly which comprises a hydrogen ion-conductive electrolyte layer, and a fuel electrode and a hydrogen-generating electrode that sandwich the electrolyte layer; a second electrolyte-electrode assembly which comprises a hydrogen ion-conductive electrolyte layer, and a fuel electrode and an oxidant electrode that sandwich the electrolyte layer; a fuel supplying means for supplying a liquid or gas fuel to the fuel electrode of the first electrolyte-electrode assembly; a means for applying to the fuel electrode of the first electrolyte-electrode assembly a potential which is positive to the hydrogen-generating electrode; and a means for supplying to the fuel electrode of the second electrolyte-electrode assembly hydrogen generated in the hydrogen-generating electrode.

Abstract: Paste comprising metallic organic compound, in particular, gold-based metallic organic compound is used as a conductive material for repairing the broken defective part and is baked. This can produce a very thin metallic film having low electric resistance. Further, a semiconductor laser is used as a heating unit to heat only the broken defective part, and a heating profile having a baking process of provisional baking and main baking and a cooling process is provided to produce the high-quality thin metallic film having no crack and a dense texture.

Abstract: An apparatus for recovering, refining, and storing hydrogen gas, includes: a recovery and refinement line for recovering and refining hydrogen gas used for a hydrogen furnace or used as a process gas; a storage tank for storing refined gas; and a resupply line for resupplying a stored gas to the hydrogen furnace or as a process gas. A palladium film is installed in the recovery and refinement line and lets hydrogen gas permeate the palladium film so as to be refined.

Abstract: An electronic device manufacturing apparatus includes: a reaction chamber including a wall having a ground potential level; a reaction gas inlet for introducing a reaction gas into the reaction chamber; a high frequency power generator for generating a high frequency voltage for exciting the reaction gas into plasma state or dissociated state; a cathode electrode connected to the high frequency power generator; and a floating capacitance formed between a potential level of the cathode electrode and the ground potential level. An impedance adjusting capacitor is inserted so as to be in series with the floating capacitance. The impedance adjusting capacitor has a capacitance value less than that of the floating capacitance.

Abstract: A hydrogen preparing apparatus is disclosed which reforms a hydrocarbon and/or a hydrocarbon containing an oxygen atom to obtain a hydrogen-containing gas and separates hydrogen from this hydrogen-containing gas. The apparatus includes a porous substrate and a hydrogen separating film which is formed on a predetermined surface portion of the porous substrate and which selectively separates hydrogen, a reforming catalyst for reforming the hydrocarbon being supported in the pores of the porous substrate. A reforming catalyst for reforming the hydrocarbon is supported on a honeycomb carrier, and the hydrogen separating film is arranged on the downstream side of the honeycomb carrier. The surface area of the catalyst per unit volume of the apparatus can be increased, whereby the apparatus can be miniaturized. A hydrogen separating efficiency can also be improved. The hydrogen manufacturing apparatus can be prevented from being damaged by a difference of expansion between the porous substrate and the container.

Abstract: An electronic device fabrication apparatus a reaction chamber; a cathode electrode and an anode electrode opposed to each other in the reaction chamber; a gas introduction pipe introduced into the reaction chamber for supplying reaction gas into the reaction chamber, the gas introduction pipe being electrically connected to the cathode electrode; and a high frequency power generation device for applying high frequency lower having a high exciting frequency which is included in one of a VHF band and a UHF band to the cathode electrode through the gas introduction pipe for exciting the reaction gas into a plasma state. The gas introduction pipe includes an impedance adjusting device for adjusting an impedance of the gas introduction pipe.

Abstract: A hydrogen preparing apparatus is disclosed which reforms a hydrocarbon and/or a hydrocarbon containing an oxygen atom to obtain a hydrogen-containing gas and separates hydrogen from this hydrogen-containing gas. The apparatus includes a porous substrate and a hydrogen separating film which is formed on a predetermined surface portion of the porous substrate and which selectively separates hydrogen, a reforming catalyst for reforming the hydrocarbon being supported in the pores of the porous substrate. A reforming catalyst for reforming the hydrocarbon is supported on a honeycomb carrier, and the hydrogen separating film is arranged on the downstream side of the honeycomb carrier. The surface area of the catalyst per unit volume of the apparatus can be increased, whereby the apparatus can be miniaturized. A hydrogen separating efficiency can also be improved. The hydrogen manufacturing apparatus can be prevented from being damaged by a difference of expansion between the porous substrate and the container.

Abstract: A hydrogen separator has a porous substrate having a through-hole, and a metal having a hydrogen separating ability coated on the inner surface of the through-hole of the porous substrate to close pores on the inner surface of the through-hole. A method for manufacturing a hydrogen separator by a chemical plating process, includes providing a porous substrate having a through-hole, and forcedly circulating a plating solution containing a metal having a hydrogen separating ability through the through-hole of the substrate. The inner surface of the through-hole is covered with the metal film having the hydrogen separating ability.

Abstract: A coordinate input device including a flexible upper substrate mounted on a rigid lower substrate and having a centrally-located input operating portion. The upper substrate includes a first resistance layer laminated thereon and X-axis electrodes formed on the first resistance layer on opposite sides of the input operating portion. The lower substrate includes a second resistance layer laminated thereon and Y-axis electrodes formed on the second resistance layer on opposite sides of the input operating portion. A spacer group is mounted between the upper and lower substrates to maintain a predetermined clearance, with spacers of the spacer group being having a height of 4 .mu.m or less, and being arranged at a pitch in the range of 0.3 to 1.0 mm. A position detecting circuit is provided for locating a depressed portion of the upper substrate by measuring a change in voltage caused by contact between the first and second resistance layers. A method is also provided for making the coordinate input device.

Abstract: A phosphor composition contains phosphor particles and a water-soluble rare earth compound uniformly covering the surfaces of the phosphor particles. The rare earth compound is present in an amount of from 0.001 to 5% by weight in terms of the corresponding rare earth oxide, based on the weight of the phosphor particles.

Abstract: A connected body including a gas separator 10 and metallic members 21 and 22, each of which has a partly oxidized surface to be reliably connected with the gas separator. The gas separator includes a ceramic substrate 11 and a gas separation membrane 12 to be coated onto substrate 11. The substrate 11 is porous so that a gas molecule can pass therethrough, and gas separation membrane 12 is connected with metallic members 21 and 22 by a glass 15 having a thermal expansion coefficient of 5.0-8.0.times.10.sup.-6 /.degree.C. Glass 15 contacts with metal supporters 21 and 22 with a contact angle of 90.degree. or less. The connected body of a gas separator and metallic supporters and an apparatus for separating hydrogen gas from a mixed gas display excellent durability and are free from leakage at the joints during the separation of hydrogen gas at high temperatures and under high pressure.

Abstract: A phosphor composition contains phosphor particles and a water-soluble rare earth compound uniformly covering the surfaces of the phosphor particles. The rare earth compound is present in an amount of from 0.001 to 5% by weight in terms of the corresponding rare earth oxide, based on the weight of the phosphor particles.

Abstract: An air conditioner for railway vehicles controlled in accordance with the air temperature in the car and data on at least one selected from the group consisting of underfoot temperature, radiant heat, air flow, humidity, outside air temperature, number of passengers and door opening operation. In this way, environment conditions which momentarily change are detected so as to prevent excessive cooling or heating in the car.

Abstract: The desk comprises a top plate and legs which are assembled so as to be able to be disassembled. The desk requires a reduced number of parts to connect the top plate and the legs, so that the labor required for assembly and disassembly may be reduced. To this end the top plate has sufficient rigidity, and each of the legs is provided with an upwardly facing surface adapted to be brought into contact with the under surface of the top plate and at the top end thereof with an arm extending along the front edge of the top plate. The top plate and the legs are connected by tapered engaging means and claw-type engaging means. The tapered engaging means comprises a concavely tapered surface formed in the front edge of the top plate and a convexly tapered surface formed on the arm of each leg, so that the two surfaces are brought into close contact with each other by sliding the leg relative to the top plate toward the user's side.

Abstract: A semiconductor integrated circuit memory structure is provided which uses macro-cellulated circuit blocks that can permit a very large storage capability (for example, on the order of 64 Mbits in a DRAM) on a single chip. To achieve, this, a plurality of macro-cellulated memory blocks can be provided, with each of the memory blocks including a memory array as well as additional circuitry such as address selection circuits and input/output circuits. Other peripheral circuits are provided on the chip which are common to the plurality of macro-cell memory blocks. The macro-cell memory blocks themselves can be formed in an array so that their combined storage capacity will form the large overall storage capacity of the chip. The combination of the macro-cell memory blocks and the common peripheral circuitry for controlling the memory blocks permits a faster and more efficient refreshing operation for a DRAM. This is enhanced by a LOC (Lead On Chip) arrangement used in conjunction with the memory blocks.

Abstract: In a read only semiconductor memory, signal lines such as data lines are subjected to an undesired parasitic capacitance which restricts the signal changing rate along the lines. The parasitic capacitance which is driven by a memory cell will become increasingly higher as the memory capacity is increased. According to the present invention, a differential sense amplifier is used to amplify the data signals which are read out of the memory cell. At the same time, a dummy cell is used to generate a reference potential which is to be referred to by the differential sense amplifier. In particular, a dummy cell arrangement is provided wherein each dummy cell includes at least two series-connected semiconductor elements to provide a predetermined dummy cell conductance to establish a reference value.

Abstract: In a read only semiconductor memory, signal lines such as data lines are subjected to an undesired parasitic capacitance which restricts the signal changing rate along the lines. The parasitic capacitance which is driven by a memory cell will become increasingly higher as the memory capacity is increased. According to the present invention, a differential sense amplifier is used to amplify the data signals which are read out of the memory cell. At the same time, a dummy cell is used to generate a reference potential which is to be referred to by the differential sense amplifier. In particular, a dummy cell arrangement is provided wherein each dummy cell includes at least two series-connected semiconductor elements to provide a predetermined dummy cell conductance to establish a reference value.

Abstract: In a read only semiconductor memory, signal lines such as data lines are subjected to an undesired parasitic capacitance which restricts the signal changing rate along the lines. The parasitic capacitance which is driven by a memory cell will become increasingly higher as the memory capacity is increased. According to the present invention, a differential sense amplifier is used to amplify the data signals which are read out of the memory cell. At the same time, a dummy cell is used to generate a reference potential which is to be referred to by the differential sense amplifier. In particular, a dummy cell arrangement is provided wherein each dummy cell includes at least two series-connected semiconductor elements to provide a predetermined dummy cell conductance to establish a reference value.

Abstract: In a read only semiconductor memory, signal lines such as data lines are subjected to an undesired parasitic capacitance which restricts the signal changing rate along the lines. The parasitic capacitance which is driven by a memory cell will become increasingly higher as the memory capacity is increased. According to the present invention, a differential sense amplifier is used to amplify the data signals which are read out of the memory cell. At the same time, a dummy cell is used to generate a reference potential which is to be referred to by the differential sense amplifier. In particular, a dummy cell arrangement is provided wherein each dummy cell includes at least two series-connected semiconductor elements to provide a predetermined dummy cell conductance to establish a reference value.

Abstract: In the past, it has been a problem in integrated circuits using MOSFETs that the gate insulating film of a transmission gate MOSFET is broken down when an abnormally high voltage such as is caused by frictional static electricity is applied to its drain region. This breakdown of the gate insulating film cannot be prevented merely by limiting the voltage level applied to the drain region to a level below the breakdown withstand voltage of the gate insulating film. The reason for this is that even with such voltage limiting, the breakdown of the gate insulating film can still occur when local heating is generated by a relatively large breakdown current flowing through the drain junction. To prevent such a breakdown of the gate insulating film, therefore, a resistance element for limiting the breakdown current is connected in series with the drain region of the transmission gate MOSFET.