Abstract: The present invention provides a process for producing glass, which can reduce energy consumption and which enables to obtain homogenous high quality glass products containing extremely few bubbles and containing no unmelted raw material. A process for producing glass comprising a granulation step of granulating a glass raw material to obtain a granulated product containing a granulated product having a particle size of from 10 to 500 ?m, and a vitrification step of making the granulated product obtained in the granulation step pass through a high temperature gas of from 2,000 to 20,000 K to obtain vitrified particles.

Abstract: In an exhaust-gas after-treatment device (10,10A) having an oxygen storage capacitor substance which releases oxygen when the exhaust-gas is rich in air-fuel ratio and storages oxygen and heats up by itself when the exhaust-gas is lean in air-fuel ratio, the air-fuel ratio for the exhaust-gas flowing into the exhaust-gas after-treatment device (10,10A) is regulated so as to alternately come into a rich condition (R) and a lean condition (L) when the temperature (Tg) of the exhaust-gas is not higher than a given temperature (Tc) and when the exhaust-gas after-treatment device (10,10A) is not in the condition of being regenerated. Thus, when an exhaust-gas after-treatment device (10,10A) having a deNOx catalyst and a DPF is not in the condition of the regeneration of deNOx catalyst, DPF regeneration, or the like, the temperature of the exhaust-gas after-treatment device (10,10A) is raised by utilizing the self-heating function of the oxygen storage capacitor substance during oxygen absorption.

Abstract: A hydraulic control apparatus is improved in reliability during a garage shifting with reducing costs of the apparatus. An electronic control unit controls equalizing the shift pattern (on-off pattern) during a first garage shifting when a manual valve is shifted from the neutral position to a drive position to the shift pattern during a second garage shifting when the manual valve is shifted from the neutral position to the reverse position. A control valve unit controls the hydraulic pressure applied to a first engagement element during the first garage shifting while controlling the hydraulic pressure applied to a second engagement element during the second garage shifting.

Abstract: An oil pressure control apparatus includes: a first latch circuit for maintaining a predetermined shift valve by oil pressure outputted through a first control valve when a predetermined high shift stage is established; and a second latch circuit for maintaining a predetermined shift valve by oil pressure outputted from the first corresponding control valve when a predetermined shift stage for a vehicle restart is established. In an automatic shift pattern, each control valve is operated to achieve an automatic shift mode by which a shift stage in the transmission is freely selected among plural forward shift stages. In the fixed shift pattern, an oil passage for supplying oil pressure of the hydraulic power source to a predetermined control valve via each shift valve is established to achieve a fixed shift mode by which a predetermined fixed forward shift stage is selected in the transmission.

Abstract: In a hydraulic control system for an automatic transmission, a valve element of an accumulator closes communication between a pressure switch circuit and a detection circuit when a hydraulic pressure applied to the detection circuit is lower than a predetermined hydraulic pressure, and opens communication between the pressure switch circuit and the detection circuit when the applied pressure is higher than or equal to the predetermined hydraulic pressure. A switching element opens communication between one end of the pressure switch circuit and an exhaust circuit when the other end of the pressure switch circuit does not communicate with the detection circuit, and closes communication between the one end and the exhaust circuit when the other end communicates with the detection circuit.

Abstract: A hydraulic control apparatus is improved in reliability during a garage shifting with reducing costs of the apparatus. An electronic control unit controls equalizing the shift pattern (on-off pattern) during a first garage shifting when a manual valve is shifted from the neutral position to a drive position to the shift pattern during a second garage shifting when the manual valve is shifted from the neutral position to the reverse position. A control valve unit controls the hydraulic pressure applied to a first engagement element during the first garage shifting while controlling the hydraulic pressure applied to a second engagement element during the second garage shifting.

Abstract: In an apparatus for manufacturing thin sheet glass, comprising a forming body 12 including a main body having a cross-sectional shape converging downwardly, the main body being configured to converging streams of molten glass into a single glass ribbon at a lower converged edge portion thereof, the streams of the molten glass flowing down along both surface of the main body; and edge members, the edge members being configured to restrict a width of the molten glass, wherein the glass ribbon formed by the forming body 12 is downwardly pulled to form thin sheet glass; the apparatus further includes a non-contact support member disposed in the vicinity of the lower converged edge portion of the main body, the non-contact support member being configured to form a thin gas layer on a supporting surface thereof, wherein the glass ribbon is supported over an entire width thereof in a non-contact way by the non-contact support member in a course wherein the glass ribbon is downwardly pulled.

Abstract: The non-volatile semiconductor memory device includes: a semiconductor substrate having a main surface; N+ diffusion layers formed spaced from each other at the main surface of the semiconductor substrate; a floating gate formed on a region between the N+ diffusion layers with a silicon oxide film interposed; an access gate formed adjacent to the floating gate on the region between N+ diffusion layers with a silicon oxide film interposed; and a control gate formed on the floating gate with an interlayer insulating film interposed. The N+ diffusion layer is provided between the floating gates, and another N+ diffusion layer is provided between the access gates. Thus performance of a memory transistor in a non-volatile semiconductor memory device is improved, reliability of the device is improved and miniaturization of the device is facilitated.

Abstract: The non-volatile semiconductor memory device includes: a semiconductor substrate having a main surface; N+ diffusion layers formed spaced from each other at the main surface of the semiconductor substrate; a floating gate formed on a region between the N+ diffusion layers with a silicon oxide film interposed; an access gate formed adjacent to the floating gate on the region between N+ diffusion layers with a silicon oxide film interposed; and a control gate formed on the floating gate with an interlayer insulating film interposed. The N+ diffusion layer is provided between the floating gates, and another N+ diffusion layer is provided between the access gates. Thus performance of a memory transistor in a non-volatile semiconductor memory device is improved, reliability of the device is improved and miniaturization of the device is facilitated.

Abstract: A method for producing a non-volatile semiconductor memory device, comprising the steps of providing a semiconductor substrate having a surface; forming trench isolations on the substrate, the trench isolations being projected from the surface; forming source and drain regions between the neighboring trench isolations, so that the source and drain regions are faced each other across a channel region; and forming a floating gate electrode on the channel region through a tunnel film which is formed on the channel region.

Abstract: The main purpose of the invention is to provide a method for fabricating a semiconductor device having trench isolations which is improved so that the transistors can be operated normally.

Abstract: A nonvolatile semiconductor memory device with trench isolation having sufficient capability of isolating memory cells is provided. A trench formed as a line in the main surface of semiconductor substrate is filled with a first insulating film. On semiconductor substrate on both sides of trench, a first gate electrode is provided with a first oxide film interposed. On the first gate electrode, a second gate electrode is provided with a second insulating film interposed. An angle formed by a side wall upper surface of trench and the surface of semiconductor substrate is smaller than 90.degree..

Abstract: One end of a flexible positioning cord is fixed on one end side of a molding drum and the positioning cord is then pulled from the other end side thereby applying a tension to the positioning cord. The tensed positioning cord presses a joint of an extensible fabric into one of tooth part forming grooves to position it therein. Next, a tension member cord is wound in a spiral form and the tension applied to the positioning cord is then relieved to allow the removal of the positioning cord from the tooth part forming groove. Thereafter, an unvulcanized rubber sheet is wrapped around the extensible fabric wound with the tension member cord, and the resultant substance is then subjected to cure through the application of pressure thereby forming a cylindrical slab. The slab is cut into round pieces at specific widths thereby obtaining synchronous belts.

Abstract: A conveying unit (1) capable of stopping at precise points in an assembly line or the like comprises a conveyor (10), a lift (20) and a support (30) as main components. The conveyor (10) is a double-belt type belt conveyor wherein synchro rubber belts (13) are set over drive pulleys (11) and plural driven pulleys (12) and the pulleys (11) are connected with each other with a shaft (14). The lift (20) is constructed of two sets of frames on which the elevation of the conveyer (10) can be varied through the use of a pair of air bags. The support (30) is conveying path in the desired fixing position.

Abstract: A silicon layer in a lower layer and an interconnection layer arranged in an upper layer are electrically connected through an opening for contact. A silicon plug layer having the same conductivity type as that of the silicon layer is embedded in the opening. The silicon plug layer is embedded in the opening by an etch back method after deposited using a CVD method. The interconnection layer in the upper layer has conductivity type different from that of the silicon plug layer. A refractory metal silicide layer is formed between the upper interconnection layer and the silicon plug layer. The refractory metal silicide layer prevents pn junction from being formed between the upper interconnection layer and the silicon plug layer.

Abstract: A silicon layer in a lower layer and an interconnection layer arranged in an upper layer are electrically connected through an opening for contact. A silicon plug layer having the same conductivity type as that of the silicon layer is embedded in the opening. The silicon plug layer is embedded in the opening by an etch back method after deposited using a CVD method. The interconnection layer in the upper layer has conductivity type different from that of the silicon plug layer. A refractory metal silicide layer is formed between the upper interconnection layer and the silicon plug layer.The refractory metal silicide layer prevents pn junction from being formed between the upper interconnection layer and the silicon plug layer.

Abstract: A semiconductor device includes a polycrystalline silicon layer formed on a silicon layer with an oxide film therebetween, an interlayer insulating layer formed to cover the surface of the silicon layer and the surface of the polycrystalline silicon layer, and a silicon plug layer formed in an embedded manner in a contact hole in the interlayer insulating layer to be directly connected to the surface of an end portion of the polycrystalline silicon layer and the surface of the silicon layer in the proximity of the end portion of the polycrystalline silicon layer. The polycrystalline silicon layer and the silicon plug layer have the same type of conductivity. By this interconnection structure, the semiconductor device is improved in the patterning accuracy of the contact portion of a multilayer stacked interconnection. Furthermore, an ohmic contact between conductive interconnection layers can be realized with relatively simple manufacturing steps without occurrence of a voltage drop caused by a pn junction.

Abstract: A silicon layer in a lower layer and an interconnection layer arranged in an upper layer are electrically connected through an opening for contact. A silicon plug layer having the same conductivity type as that of the silicon layer is embedded in the opening. The silicon plug layer is embedded in the opening by an etch back method after deposited using a CVD method. The interconnection layer in the upper layer has conductivity type different from that of the silicon plug layer. A refractory metal silicide layer is formed between the upper interconnection layer and the silicon plug layer.The refractory metal silicide layer prevents pn junction from being formed between the upper interconnection layer and the silicon plug layer.

Abstract: Embodiments of engine speed control and methods of maintaining engine speed control and fuel injection so as to minimize hunting and improve exhaust emission control, particularly at low speeds. This is achieved by setting a fixed amount of fuel supplied to the engine per cycle, per cylinder when the engine speed is below a predetermined speed or a speed below a predetermined speed is called for. Engine speed control is maintained under the constant fuel position by controlling the spark advance in one embodiment. A manual spark advance and automatic spark advance are depicted.

Abstract: An outboard motor having vertically spaced cylinders and wherein exhaust emission control is provided by providing a leaner than normal fuel/air mixture to the lower cylinders under certain conditions. In addition, the device provides enrichment when the engine is operating at a below normal condition and also provides an engine speed reduction if the engine is operating at a temperature above a desired maximum temperature. Both three cylinder inline and V-6 embodiments are depicted.