Abstract: An image sensor includes a plurality of pixel blocks and a connection unit. The plurality of pixel blocks includes: a diffusion unit to which an electric charge resulting from photoelectric conversion is transferred; and a transistor containing a source electrically connected with the diffusion unit. The connection unit is electrically connected with a drain of the transistor included in each of the plurality of pixel blocks.

Abstract: An image sensor includes a plurality of pixel blocks and a connection unit. The plurality of pixel blocks includes: a diffusion unit to which an electric charge resulting from photoelectric conversion is transferred; and a transistor containing a source electrically connected with the diffusion unit. The connection unit is electrically connected with a drain of the transistor included in each of the plurality of pixel blocks.

Abstract: An image sensor includes a first semiconductor substrate provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, and a second semiconductor substrate provided with a supply unit for the pixel, the supply unit supplying the transfer unit with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit.

Abstract: An image sensor includes a first semiconductor substrate provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, and a second semiconductor substrate provided with a supply unit for the pixel, the supply unit supplying the transfer unit with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit.

Abstract: An image sensor includes: an accumulation unit that accumulates an electric charge generated by a photoelectric conversion unit that photoelectrically converts incident light transmitted through a microlens; and a readout unit that reads out a signal based on a voltage of the accumulation unit, wherein the accumulation unit and the readout unit are included along an optical axis direction of the microlens.

Abstract: An image sensor includes: (1) a first pixel and a second pixel each including: a photoelectric conversion unit that photoelectrically converts light and generates an electric charge; and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to an accumulation unit that accumulates the electric charge, the first pixel and the second pixel being arranged in a row direction; (2) a first supply unit that supplies a signal which controls the transfer unit of the first pixel; and (3) a second supply unit that supplies a signal which controls the transfer unit of the second pixel.

Abstract: An image sensor includes a first voltage source that supplies a first voltage and a plurality of pixels supplied with the first voltage. The pixel includes a photoelectric conversion unit that photoelectrically converts incident light, an accumulation unit to which an electric charge resulting from photoelectric conversion by the photoelectric conversion unit is transferred and accumulated, a transfer unit that transfers the electric charge from the photoelectric conversion unit to the accumulation unit; a second voltage source that supplies a second voltage, and a supply unit that supplies the transfer unit with a transfer signal based on either the first voltage supplied by the first voltage source or the second voltage supplied by the second voltage source.

Abstract: An image sensor includes: an accumulation unit that accumulates an electric charge generated by a photoelectric conversion unit that photoelectrically converts incident light transmitted through a microlens; and a readout unit that reads out a signal based on a voltage of the accumulation unit, wherein the accumulation unit and the readout unit are included along an optical axis direction of the microlens.

Abstract: An image sensor includes a first voltage source that supplies a first voltage and a plurality of pixels supplied with the first voltage. The pixel includes a photoelectric conversion unit that photoelectrically converts incident light, an accumulation unit to which an electric charge resulting from photoelectric conversion by the photoelectric conversion unit is transferred and accumulated, a transfer unit that transfers the electric charge from the photoelectric conversion unit to the accumulation unit; a second voltage source that supplies a second voltage, and a supply unit that supplies the transfer unit with a transfer signal based on either the first voltage supplied by the first voltage source or the second voltage supplied by the second voltage source.

Abstract: An image-capturing device allowing skew reduction, and an image-capturing system allowing skew reduction are provided. An image-capturing device is provided, including a plurality of photoelectric converting units; and a plurality of light-receiving units that are arranged corresponding to a plurality of blocks each constituted by one or more photoelectric converting units, and receive drive light instructing driving of the photoelectric converting units to output a drive signal to a corresponding photoelectric converting unit among the photoelectric converting units. In addition, an image-capturing system is provided, including the image-capturing device; and a light-emitting unit that is spaced apart from the plurality of light-receiving units, and emits the drive light to the plurality of light-receiving units.

Abstract: An image sensor includes a first voltage source that supplies a first voltage and a plurality of pixels supplied with the first voltage. The pixel includes a photoelectric conversion unit that photoelectrically converts incident light, an accumulation unit to which an electric charge resulting from photoelectric conversion by the photoelectric conversion unit is transferred and accumulated, a transfer unit that transfers the electric charge from the photoelectric conversion unit to the accumulation unit; a second voltage source that supplies a second voltage, and a supply unit that supplies the transfer unit with a transfer signal based on either the first voltage supplied by the first voltage source or the second voltage supplied by the second voltage source.

Abstract: An image sensor includes a plurality of pixel blocks and a connection unit. The plurality of pixel blocks includes: a diffusion unit to which an electric charge resulting from photoelectric conversion is transferred; and a transistor containing a source electrically connected with the diffusion unit. The connection unit is electrically connected with a drain of the transistor included in each of the plurality of pixel blocks.

Abstract: An image sensor includes a first semiconductor substrate provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, and a second semiconductor substrate provided with a supply unit for the pixel, the supply unit supplying the transfer unit with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit.

Abstract: A solid-state image sensor includes: a plurality of pixels, each including a photoelectric conversion unit and a charge accumulating unit that accumulates an electric charge from the photoelectric conversion unit; and a connection unit that includes a plurality of linking units each of which electrically connects the charge accumulating units of two adjacent pixels among the plurality of pixels.

Abstract: An image sensor includes a first semiconductor substrate provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, and a second semiconductor substrate provided with a supply unit for the pixel, the supply unit supplying the transfer unit with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit.

Abstract: An image sensor includes a first semiconductor substrate provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, and a second semiconductor substrate provided with a supply unit for the pixel, the supply unit supplying the transfer unit with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit.

Abstract: An image sensor includes: an accumulation unit that accumulates an electric charge generated by a photoelectric conversion unit that photoelectrically converts incident light transmitted through a microlens; and a readout unit that reads out a signal based on a voltage of the accumulation unit, wherein the accumulation unit and the readout unit are included along an optical axis direction of the microlens.

Abstract: A solid-state image sensor includes: a plurality of pixels, each including a photoelectric conversion unit and a charge accumulating unit that accumulates an electric charge from the photoelectric conversion unit; and a connection unit that includes a plurality of linking units each of which electrically connects the charge accumulating units of two adjacent pixels among the plurality of pixels.

Abstract: An image sensor includes: an accumulation unit that accumulates an electric charge generated by a photoelectric conversion unit that photoelectrically converts incident light transmitted through a microlens; and a readout unit that reads out a signal based on a voltage of the accumulation unit, wherein the accumulation unit and the readout unit are included along an optical axis direction of the microlens.

Abstract: An image sensor includes a first voltage source that supplies a first voltage and a plurality of pixels supplied with the first voltage. The pixel includes a photoelectric conversion unit that photoelectrically converts incident light, an accumulation unit to which an electric charge resulting from photoelectric conversion by the photoelectric conversion unit is transferred and accumulated, a transfer unit that transfers the electric charge from the photoelectric conversion unit to the accumulation unit; a second voltage source that supplies a second voltage, and a supply unit that supplies the transfer unit with a transfer signal based on either the first voltage supplied by the first voltage source or the second voltage supplied by the second voltage source.