Abstract: An imaging element includes a photoelectric conversion part configured to convert light into charges, an accumulation part in which the charges from the photoelectric conversion part are accumulated, a transfer path part which is a transfer path for transferring charges from the photoelectric conversion part to the accumulation part and has a lower potential than a pixel separation region formed around the photoelectric conversion part, and a measurement part configured to measure the number of times a predetermined amount of charges is accumulated in the accumulation part and to measure the amount of charges accumulated in the photoelectric conversion part.

Abstract: An image sensor includes a first semiconductor substrate provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, and a second semiconductor substrate provided with a supply unit for the pixel, the supply unit supplying the transfer unit with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit.

Abstract: An image sensor includes a first semiconductor substrate provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, and a second semiconductor substrate provided with a supply unit for the pixel, the supply unit supplying the transfer unit with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit.

Abstract: An imaging element includes a storage unit that stores a pixel signal converted into a digital signal; a control line to which a control signal to read out the pixel signal stored in the storage unit is output; an output line to which the pixel signal read out from the storage unit is output; and an amplification unit that amplifies the pixel signal output to the output line. The output line may include a positive and negative pair of output lines connected to the amplification unit, the output line may be connected to one of a positive and negative pair of inputs of the amplification unit, and another of the inputs of the amplification unit may be connected to reference potential.

Abstract: An imaging element includes a first semiconductor substrate having a pixel unit in which a plurality of pixels are disposed, each pixel including a photoelectric conversion unit that converts light to an electric charge, a retention unit that retains the electric charge, a first transfer unit that transfers the electric charge from the photoelectric conversion unit to the retention unit, an accumulation unit that accumulates the electric charge, a second transfer unit that transfers the electric charge from the retention unit to the accumulation unit, and an output unit that outputs a signal based on the electric charge and a second semiconductor substrate having a control circuit unit that is disposed at a position opposing the pixel unit and that controls the first transfer unit and/or the second transfer unit, and a peripheral circuit unit that is disposed outside of the control circuit unit and that controls the output unit.

Abstract: An image sensor includes: (1) a first pixel and a second pixel each including: a photoelectric conversion unit that photoelectrically converts light and generates an electric charge; and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to an accumulation unit that accumulates the electric charge, the first pixel and the second pixel being arranged in a row direction; (2) a first supply unit that supplies a signal which controls the transfer unit of the first pixel; and (3) a second supply unit that supplies a signal which controls the transfer unit of the second pixel.

Abstract: An image sensor includes: (1) a first pixel and a second pixel each including: a photoelectric conversion unit that photoelectrically converts light and generates an electric charge; and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to an accumulation unit that accumulates the electric charge, the first pixel and the second pixel being arranged in a row direction; (2) a first supply unit that supplies a signal which controls the transfer unit of the first pixel; and (3) a second supply unit that supplies a signal which controls the transfer unit of the second pixel.

Abstract: An image sensor includes a plurality of pixel blocks and a connection unit. The plurality of pixel blocks includes: a diffusion unit to which an electric charge resulting from photoelectric conversion is transferred; and a transistor containing a source electrically connected with the diffusion unit. The connection unit is electrically connected with a drain of the transistor included in each of the plurality of pixel blocks.

Abstract: An image sensor includes a plurality of pixel blocks and a connection unit. The plurality of pixel blocks includes: a diffusion unit to which an electric charge resulting from photoelectric conversion is transferred; and a transistor containing a source electrically connected with the diffusion unit. The connection unit is electrically connected with a drain of the transistor included in each of the plurality of pixel blocks.

Abstract: An image sensor includes a first semiconductor substrate provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, and a second semiconductor substrate provided with a supply unit for the pixel, the supply unit supplying the transfer unit with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit.

Abstract: An image sensor includes a first semiconductor substrate provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, and a second semiconductor substrate provided with a supply unit for the pixel, the supply unit supplying the transfer unit with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit.

Abstract: An image sensor includes: an accumulation unit that accumulates an electric charge generated by a photoelectric conversion unit that photoelectrically converts incident light transmitted through a microlens; and a readout unit that reads out a signal based on a voltage of the accumulation unit, wherein the accumulation unit and the readout unit are included along an optical axis direction of the microlens.

Abstract: An image sensor includes: (1) a first pixel and a second pixel each including: a photoelectric conversion unit that photoelectrically converts light and generates an electric charge; and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to an accumulation unit that accumulates the electric charge, the first pixel and the second pixel being arranged in a row direction; (2) a first supply unit that supplies a signal which controls the transfer unit of the first pixel; and (3) a second supply unit that supplies a signal which controls the transfer unit of the second pixel.

Abstract: An image sensor includes a first voltage source that supplies a first voltage and a plurality of pixels supplied with the first voltage. The pixel includes a photoelectric conversion unit that photoelectrically converts incident light, an accumulation unit to which an electric charge resulting from photoelectric conversion by the photoelectric conversion unit is transferred and accumulated, a transfer unit that transfers the electric charge from the photoelectric conversion unit to the accumulation unit; a second voltage source that supplies a second voltage, and a supply unit that supplies the transfer unit with a transfer signal based on either the first voltage supplied by the first voltage source or the second voltage supplied by the second voltage source.

Abstract: An image sensor includes: an accumulation unit that accumulates an electric charge generated by a photoelectric conversion unit that photoelectrically converts incident light transmitted through a microlens; and a readout unit that reads out a signal based on a voltage of the accumulation unit, wherein the accumulation unit and the readout unit are included along an optical axis direction of the microlens.

Abstract: An image sensor includes a first voltage source that supplies a first voltage and a plurality of pixels supplied with the first voltage. The pixel includes a photoelectric conversion unit that photoelectrically converts incident light, an accumulation unit to which an electric charge resulting from photoelectric conversion by the photoelectric conversion unit is transferred and accumulated, a transfer unit that transfers the electric charge from the photoelectric conversion unit to the accumulation unit; a second voltage source that supplies a second voltage, and a supply unit that supplies the transfer unit with a transfer signal based on either the first voltage supplied by the first voltage source or the second voltage supplied by the second voltage source.

Abstract: An image-capturing device allowing skew reduction, and an image-capturing system allowing skew reduction are provided. An image-capturing device is provided, including a plurality of photoelectric converting units; and a plurality of light-receiving units that are arranged corresponding to a plurality of blocks each constituted by one or more photoelectric converting units, and receive drive light instructing driving of the photoelectric converting units to output a drive signal to a corresponding photoelectric converting unit among the photoelectric converting units. In addition, an image-capturing system is provided, including the image-capturing device; and a light-emitting unit that is spaced apart from the plurality of light-receiving units, and emits the drive light to the plurality of light-receiving units.

Abstract: An image sensor includes a first voltage source that supplies a first voltage and a plurality of pixels supplied with the first voltage. The pixel includes a photoelectric conversion unit that photoelectrically converts incident light, an accumulation unit to which an electric charge resulting from photoelectric conversion by the photoelectric conversion unit is transferred and accumulated, a transfer unit that transfers the electric charge from the photoelectric conversion unit to the accumulation unit; a second voltage source that supplies a second voltage, and a supply unit that supplies the transfer unit with a transfer signal based on either the first voltage supplied by the first voltage source or the second voltage supplied by the second voltage source.

Abstract: An image sensor includes a plurality of pixel blocks and a connection unit. The plurality of pixel blocks includes: a diffusion unit to which an electric charge resulting from photoelectric conversion is transferred; and a transistor containing a source electrically connected with the diffusion unit. The connection unit is electrically connected with a drain of the transistor included in each of the plurality of pixel blocks.

Abstract: An image sensor includes a first semiconductor substrate provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, and a second semiconductor substrate provided with a supply unit for the pixel, the supply unit supplying the transfer unit with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit.