Abstract: A semiconductor flow velocity sensor having a semiconductor substrate and an electrical heating unit arranged on the substrate. The sensor located in the fluid flow to be measured can electrically detect the radiation from the heating unit which varies depending on the velocity of fluid flow. Thermal insulator is provided between the semiconductor (silicon) substrate and the heating unit so as to thermally shield the substrate from the heating unit. On the thermally isolated area of the substrate is provided an external sensor circuit so as to enable to increase the integration of the sensor.

Abstract: A gas containing a film forming component is shot through a shooting means in the form of a high speed stream of gas. The gas stream is shot toward the surface of a heated base where a film is to be deposited. The stream is directed at an inclination relative to the base surface. As the stream approaches the base surface it is subjected to the action of a high speed sucking stream of air produced by a sucking means. The sucking means causes the gas stream to flow in a V-shaped path with the upper ends of the V located at the shooting means and the sucking means, with the vertex of the V located therebetween. The film coating is placed on the surface of the base by allowing the base surface to contact the V-shaped path of the stream at the vertex of the path.

Abstract: A floating head device has a floating surface for imparting a floating force for floating from a recording surface by air flow formed between the floating surface and the recording surface and a suction surface for imparting a sucking force in a relative movement of a head slider to the recording surface of a recording medium. The air inlet end of the suction surface has grooves and is disposed in down-stream of the air flow from the air inlet end of the floating surface.