Abstract: A method for improving endometriosis includes administrating a composition containing aglycon type isoflavones and a pharmaceutically acceptable carrier to mammal subject in need of treatment of endometriosis in an amount effective for treating endometriosis, wherein the aglycon type isoflavones are composed of daidzein, genistein, and glycitein.

Abstract: A material using an aglycone type isoflavone which has the effect of improving the endometriosis is provided. Also, a method of producing an endometriosis improving material includes: inoculating legumes with aspergillus oryzae and koji treating them, and hydrolyzing the proteins in the products by hydrolyzing the products of the koji treatment and decomposing glycosides of the isoflavone compounds in the legumes, then producing isoflavone compounds containing a large amount of aglycone, and producing a material for improving endometriosis containing aglycone type isoflavone from the legumes.

Abstract: A photomask defect correction method and device correct an opaque or a clear defect of a photomask. An opaque or clear defect in a portion of a photomask to be corrected is observed and information of the observed defect for performing correction of the defect is acquired. The observed defect is corrected in accordance with the acquired defect information by irradiating the observed defect with a focused ion beam from an ion beam irradiation system having a gas field ion source that generates gas ions for forming the focused ion beam. The gas ions may be hydrogen ions, nitrogen ions, oxygen ions, fluorine ions or chlorine ions.

Abstract: A photomask defect correction method and device correct an opaque or a clear defect of a photomask. An opaque or clear defect in a portion of a photomask to be corrected is observed and information of the observed defect for performing correction of the defect is acquired. The observed defect is corrected in accordance with the acquired defect information by irradiating the observed defect with a focused ion beam from an ion beam irradiation system having a gas field ion source that generates gas ions for forming the focused ion beam. The gas ions may be hydrogen ions, nitrogen ions, oxygen ions, fluorine ions or chlorine ions.

Abstract: A photomask defect correction method for correcting a defect of a photomask. A defect in a portion of a photomask to be corrected is observed and information of the observed defect for performing correction of the defect is acquired. The observed defect is corrected in accordance with the acquired defect information by irradiating the observed defect with a focused ion beam from an ion beam irradiation system having a gas field ion source that generates rare gas ions for forming the focused ion beam.

Abstract: There is a micro-machining apparatus for removing the micro-machining dust generated at the time of machining while a workpiece M is machined within a liquid W using a probe tip. The apparatus includes a stage on which the workpiece is to be placed; a probe having the probe tip, a machining device having a moving means that moves the stage and the probe relative to each other to machine the workpiece by the probe tip, and a micro-machining dust removing device having a first electrode and a second electrode that are arranged in the liquid so as to sandwich the probe tip therebetween, and a voltage application means that applies a voltage to between both the electrodes to move the micro-machining dust in the liquid.

Abstract: A method for fabricating an extreme ultraviolet lithography (EUVL) mask. In an etching step, at least a part of an absorption layer of an EUVL mask is etched by allowing a charged particle to irradiate the absorption layer under feed of a halogenated xenon gas. In an oxidant feed step, an oxidant is fed to the absorption layer after the etching step to form an oxidized layer at a side surface of the absorption layer that is not etched during the etching step.

Abstract: When a characterization of a tip of a diamond stylus for working is needed, the tip of the diamond stylus for working used is observed by a high resolution scanning electron microscope of a high acceleration voltage under a steam atmosphere. When the tip of the diamond stylus for working is worn or when a shape of the tip of the stylus needs to be changed, the tip of the diamond stylus for working is worked by selectively irradiating an electron beam only to a necessary region by increasing an amount of steam and an amount of a current of the electron beam. When a working chip is strongly adhered to the diamond stylus for working and needs to be removed, the electron beam is selectively irradiated only to the working chip adhered to the tip of the diamond stylus for working to be removed under a xenon fluoride atmosphere.

Abstract: A photomask defect correction method corrects a defect of the photomask, and includes an observation process of observing the defect of a portion to be corrected and acquiring defect information for performing correction, and a defect correction process of irradiating a focused ion beam formed of rare gas ions and generated by an ion beam irradiation system including a gas field ion source to the portion to be corrected and correcting the defect.

Abstract: A method for fabricating EUVL mask, by which the pattern of absorption layer can be fabricated at a high precision is provided. The method includes an etching step of etching black defect of the absorption layer of the EUVL mask by the irradiation of ion beam on the absorption layer under feed of xenon fluoride gas and further includes an oxidant feed step for feeding oxidant gas to the absorption layer after the etching step, and the etching step and the oxidant feed step are alternately carried out at plural times.

Abstract: An opaque defect is processed by scanning with a high load or height fixed mode using a probe harder than a pattern material of a photomask at the time of going scanning, and is observed by scanning with a low load or intermittent contact mode at the time of returning scanning so as to detect an ending point of the opaque defect by the height information. When there is a portion reaching to a glass substrate as an ending point, this portion is not scanned by the high load or height fixed mode in the next processing, and only a portion not reaching to the ending point is scanned by the high load or height fixed mode.

Abstract: Provided is a photomask defect correction method of correcting a defect on a photomask including a substrate (2) and a mask pattern (3) by cutting and removing processing a defect portion (5) based on observation data obtained through AFM observation of the photomask in advance, including: an area setting step of setting a processing area (E1) based on the observation data, and setting areas adjacent to the processing area as removing processing areas (E2) of cutting wastes for cutting and removing the cutting wastes which are produced by the cutting and removing processing and may be firmly adhered; a processing step of cutting and removing processing the defect portion with a probe; and a moving step of moving the cutting wastes by scanning the probe with a weaker pressing force than the pressing force at the time of cutting and processing within the removing processing areas of cutting wastes to conduct a cutting wastes removing process.

Abstract: Provided is a photomask defect correction method including: an observing step of scanning plurality of lines one after another while controlling a distance between the probe tip and a surface (2a) of the substrate so that displacement of the probe becomes constant to recognize a shape of the defect portion (5) through AFM observation; and a processing step of scanning a plurality of lines one after another while pressing the probe tip to the recognized defect portion with a predetermined force to subject the defect portion to cutting and removing processing, in which, at the observing step, the scanning for every one line is set in a parallel direction (C direction) to an edge (3a) of a mask pattern (3), and the scanning of the plurality of lines is performed one after another from the mask pattern side towards a tip side (D direction) of the defect portion.

Abstract: To recognize a defect portion and a mask pattern with a distinctly distinguished state through AFM observation of a photomask without being influenced by a double-tips image, provided is a method of recognizing, through AFM observation of a photomask including a substrate (2) and the mask pattern formed on the substrate (2a) with a predetermined pattern, a shape (5) of a projection type defect portion projected from the mask pattern, including the steps of storing a reference image an observation image in which an edge line of the defect portion is first confirmed at the time of AFM observation; and correcting, after the storing step, the edge line (L2) of the defect portion confirmed through the observation image obtained by the scanning performed hereinafter into a normal line (L1) with reference to the reference image, in which the shape of the defect portion is recognized based on the observed image after the correction.

Abstract: The present invention provides a working method using a scanning probe which can enhance a working speed and prolong a lifetime of the probe. The present invention provides the working method using a scanning probe which works a sample by performing the relative scanning of a probe supported on a cantilever on the sample at a predetermined scanning speed. The working method can work the object to be worked while forcibly and relatively vibrating the probe in the direction orthogonal to or parallel to a working surface of the sample at low frequency of 100 to 1000 Hz.

Abstract: A residue of a thermosetting resin or a photo-curing resin adhered to a mold is detected by comparing a three-dimensional shape 1 measured by AFM in fabricating the mold or three-dimensional CAD design data of the mold and a three-dimensional shape after transcription measured by AFM. An accuracy of detecting the residue is promoted by observing the residue with high fidelity by a stylus having a high aspect, or correcting a shape of the stylus. The mold is made to be able to be reutilized by removing the extracted residue physically by an AFM stylus or by an electron beam gas assist etching or a focused ion beam gas assist etching.

Abstract: When a characterization of a tip of a diamond stylus for working is needed, the tip of the diamond stylus for working used is observed by a high resolution scanning electron microscope of a high acceleration voltage under a steam atmosphere. When the tip of the diamond stylus for working is worn or when a shape of the tip of the stylus needs to be changed, the tip of the diamond stylus for working is worked by selectively irradiating an electron beam only to a necessary region by increasing an amount of steam and an amount of a current of the electron beam. When a working chip is strongly adhered to the diamond stylus for working and needs to be removed, the electron beam is selectively irradiated only to the working chip adhered to the tip of the diamond stylus for working to be removed under a xenon fluoride atmosphere.

Abstract: In a micromachining apparatus equipped with an AFM having a plurality of independently actuatable probes, which uses an electron beam or a helium ion beam produced by a gas field ion source, an isolating pattern including a defect is grounded by bringing the conducting probe into contact with the pattern, and then the opaque defect is corrected while the charge-up by an electron beam or gas ion beam is prevented. In the case where there are isolating patterns in an observation range and the effect of the charge-up arises even when the isolating pattern including a defect is grounded, the respective isolating patterns are grounded by the plurality of conducting probes thereby to suppress the effect of the charge-up.

Abstract: There is a micro-machining apparatus for removing the micro-machining dust generated at the time of machining while a workpiece M is machined within a liquid W using a probe tip. The apparatus includes a stage on which the workpiece is to be placed; a probe having the probe tip, a machining device having a moving means that moves the stage and the probe relative to each other to machine the workpiece by the probe tip, and a micro-machining dust removing device having a first electrode and a second electrode that are arranged in the liquid so as to sandwich the probe tip therebetween, and a voltage application means that applies a voltage to between both the electrodes to move the micro-machining dust in the liquid.

Abstract: A processing probe for repairing a defective portion in a sample has a cantilever and a probe separate and independent from the cantilever and integrally connected to an end portion of the cantilever for scratch-processing a defective portion of a sample. The cantilever and the probe are conductive for preventing the generation of electrostatic charges by friction of the probe against the sample during scratch-processing of the defective portion of the sample.