Abstract: A two-dimensional image detector that allows charges generated by each photoconductor particle to be smoothly transmitted through a photoconductive layer and thereby ensures effective transmission of charges generated in the photoconductive layer to an active matrix substrate. A two-dimensional image detector of the present invention includes at least an active matrix substrate 1 having a plurality of pixel electrodes 10, and a photoconductive layer 2 laminated on the pixel electrodes 10. The photoconductive layer 2 is composed of a particulate photoconductor, and a binder containing a resin that renders volumetric shrinkage upon reaction. In other words, the foregoing binder contains either (i) a resin that undergoes volumetric shrinkage when it reacts per se (polymerization, cross-linking, or decomposition), (ii) a polymerizable monomer to form a resin, or (iii) a solvent along with the foregoing resin or polymerizable monomer.

Abstract: What are formed on an insulating substrate are gate electrodes and data electrodes provided in a grid pattern, a TFT provided in each grid and connected to the gate electrode and the data electrode, an interlayer insulating film formed on the TFT and including a contact hole penetrating the film itself, and a sense electrode provided on the interlayer insulating film and passing through the contact hole. On the interlayer insulating film, an upper layer insulating film is formed so as to cover the sense electrode. A surface of the interlayer insulating film in which surface the sense electrode is formed is flat. On this account, it is possible to provide an uneven pattern sensing device capable of smoothing out a surface thereof without any increase of the manufacturing process and limitation of a choice of materials for a protective film.

Abstract: A surface of a semiconductor film formed on the substantial entirety of a substrate is bombarded with ceramic particles blasted by an abrasive particle discharge nozzle. The abrasive particle discharge nozzle blasts the abrasive ceramic particles while repeating its reciprocal movement along the X-axis at a constat cycle and high velocity. In a flattening step, the substrate is moved relative to the abrasive particle discharge nozzle along the Y-axis so that the entire surface of the semiconductor film is bombarded with the ceramic particles. Thus, a method is offered to readily flatten an irregular surface of a semiconductor film.

Abstract: A two-dimensional image detecting device is provided with an active-matrix substrate including electrode wires, switching elements, and pixel electrodes; and an opposing substrate including electrode sections and a semiconductive layer. The substrates are disposed such that pixel electrodes and a semiconductive layer oppose each other, and are electrically connected with each other via a conductive material. Projecting electrodes are formed in accordance with the pixel electrodes on a connecting surface of at least one of the active-matrix substrate and the opposing substrate. An exterior wall is formed by a sealing material at an edge of the connecting surface so as to shut off a space between the substrates.

Abstract: In a two-dimensional image detector in accordance with the present invention, an active matrix substrate includes: a gate insulating film provided on gate electrodes and storage capacitance electrodes (Cs electrodes) provided in turn on a glass substrate; a first insulating protection layer and a second insulating protection layer sequentially provided on the gate insulating film; and pixel electrodes provided on the second insulating protection layer in a matrix. The second insulating protection layer is made of an acrylic resin, and its edges are completely covered with the photoconductor film.

Abstract: A detector panel having a bias application electrode and a converter layer formed on a supporting substrate, and a readout panel (active matrix panel), are bonded to each other directly through a single layer of electroconductive resin. That is, a pattern of photosensitive resin is formed before-hand on reading electrodes of the readout panel, and this readout panel and the converter layer are bonded together directly. Since the converter layer has no pixel electrodes formed thereon, the converter layer need not be smoothed, and the two panels need not be positionally adjusted to each other with high precision.

Abstract: In a method of the present invention for fabricating a two-dimensional image detector in which a light/radiations detection element is applied, an upper electrode, a first charge blocking layer, and a semiconductor layer having photoconductivity are provided on support substrate in the stated order, and thereafter, a surface of the semiconductor layer is sprayed with ceramic particles by means of an abrasive grain jet nozzle. The abrasive grain jet nozzle repeatedly makes a high-speed reciprocating motion in an X direction at constant cycles while jetting the ceramic particles to the entirety of the surface of the semiconductor layer of the counter substrate moving in a Y direction, so that the surface of the semiconductor layer is subjected to a flattening treatment. This enables to provide a two-dimensional image detector in which a light/radiations detection element that provides effective improvement of a charge blocking effect and suppression of deterioration of reliability is applied.

Abstract: An active matrix substrate provided with a matrix of electrode wires, a plurality of thin film transistors (TFTs) individually formed at intersections of the matrix, and pixel electrodes connected to the electrode wires through the thin film transistors (TFTs) is laminated to a counter substrate provided with connecting electrodes by means of an anisotropic conductive bonding agent. The counter substrate is composed of 12 divided pieces which are tiled as panes.

Abstract: A method for manufacturing a two-dimensional image detector in which electrically connected via a conductive material such as an anisotropic conductive adhesive are (i) an active matrix substrate having a pixel-arrayed layer including pixel electrodes and switching elements arranged in a lattice form and (ii) a counter substrate having a semiconductor layer with photoconductivity and an electrode section composed of connecting electrodes, a carrier blocking layer, etc., formed so as to face substantially an entirety of a surface of the pixel-arrayed layer, includes the step of (a) forming a plurality of protuberance electrodes on a connection surface of the counter substrate by blasting. By the foregoing method, a plurality of protuberance electrodes with a uniform height can be easily formed on one and same substrate.

Abstract: A two-dimensional image detector comprises an active matrix substrate provided with a pixel layer which includes pixel electrodes arranged in matrix form and switching elements; a counter substrate, provided with an upper electrode provided over substantially the entirety of the pixel layer, and a semiconductor layer having photoconductivity, provided opposite the pixel layer; and a conductive adhesive material which connects the active matrix substrate and the counter substrate to each other; in which the active matrix substrate is provided with a second electrode section for inputting a signal to the upper electrode of the counter substrate, and the upper electrode and the second electrode section are electrically connected to each other via a conductive member.

Abstract: The present two-dimensional image sensor is constituted by: a photoconductive film for converting electromagnetic radiation carrying image information to electric charge; an active matrix substrate including: a pixel accommodating layer for accommodating pixel electrodes connected to the photoconductive film to accumulate the electric charge in the photoconductive film; a wiring layer, located opposite the pixel electrodes across the pixel accommodating layer, for providing gate lines, source lines, etc. to detect the accumulated electric charge; and first and second insulating protection layers interposed between the pixel accommodating layer and the wiring layer; and a common electrode, located opposite the pixel accommodating layer across the photoconductive film, for developing an electric field between itself and the pixel electrodes, wherein: the common electrode is provided in a pixel region in which the pixel electrodes are disposed.

Abstract: A two-dimensional image detector that allows charges generated by each photoconductor particle to be smoothly transmitted through a photoconductive layer and thereby ensures effective transmission of charges generated in the photoconductive layer to an active matrix substrate. A two-dimensional image detector of the present invention includes at least an active matrix substrate 1 having a plurality of pixel electrodes 10, and a photoconductive layer 2 laminated on the pixel electrodes 10. The photoconductive layer 2 is composed of a particulate photoconductor, and a binder containing a resin that renders volumetric shrinkage upon reaction. In other words, the foregoing binder contains either (i) a resin that undergoes volumetric shrinkage when it reacts per se (polymerization, cross-linking, or decomposition), (ii) a polymerizable monomer to form a resin, or (iii) a solvent along with the foregoing resin or polymerizable monomer.

Abstract: The invention provides a two-dimensional image detector having superior uniformity in thickness and composition of a photoconductive layer with respect to the entire substrate, and a method of productively (efficiently) and inexpensively manufacturing such a two-dimensional image detector. The two-dimensional image detector includes at least an active matrix substrate 1 having a plurality of pixel electrodes 10, and a photoconductive layer 2 stacked on the pixel electrodes 10, wherein the photoconductive layer 2 is transferred to the active matrix substrate 1 after being formed in a predetermined thickness on a transfer substrate. That is, a fabrication method of the two-dimensional image detector is the method in which the photoconductive layer 2 is formed in advance in a predetermined thickness on the transfer substrate and then transferred on the active matrix substrate 1. The photoconductive layer 2 includes a mixture of particulate photoconductors and a binder.

Abstract: A two-dimensional image detector of the present invention includes: an active matrix substrate equipped with charge storage capacitors and TFTs; and an opposing substrate equipped with a semiconductor substrate. The two-dimensional image detector is formed by adhering the active matrix substrate and the opposing substrate to each other with an anisotropic conductive adhesive agent. With this structure, since a semiconductor layer is not required to be deposited on the active matrix substrate where the TFTs are already formed, it is possible to use CdTe, CdZnTe, etc. The use of CdTe, CdZnTe, etc. as a material of the semiconductor layer having photoconductivity allows the two-dimensional image detector to show good response and to deal with the dynamic images.

Abstract: In a two-dimensional image detecting device, an active-matrix substrate which is provided with an electrical charge storage capacity and TFT(thin-film transistor) and an opposing substrate which is provided with a semiconductive substrate are bonded to each other by using connecting members with conductivity and bonding property that are patterned in accordance with pixel electrodes of the electrical charge storage capacity. With this arrangement, it is not necessary to form a semiconductive layer onto the active-matrix substrate, the TFT having been already formed on the active-matrix substrate; thus, it is possible to form the semiconductive substrate of the opposing substrate that is made of a material selected from the group consisting of CdTe and CdZnTe, etc. Consequently, the two-dimensional image detecting device is superior in response and is capable of dealing with moving image as well.

Abstract: A two-dimensional image detector is provided with an active-matrix substrate, which has lattice-shaped wiring, a plurality of thin-film transistors installed at the respective lattice points of the electrode wiring and a plurality of pixel electrodes, an opposing substrate, which has a semiconductor layer having a photoconductive property, and conductive members for connecting the pixel electrodes and the semiconductor electrode. In the gap between the active-matrix substrate and the opposing substrate, areas having no conductive members are filled with an inactive gas.