Abstract: The invention has for its object to provide a process of synthesizing high-purity hBN crystal bodies on a robust substrate even under normal pressure. The inventive process of producing hexagonal boron nitride crystal bodies is characterized by comprising a preparation step of preparing a mixture of a boron nitride raw material and a metal solvent comprising a transition metal, a contact step of bringing a sapphire substrate in contact with the mixture, a heating step of heating the mixture, and a recrystallization step of recrystallizing at normal pressure a melt obtained in the heating step. It is also characterized by using as the metal solvent a transition metal selected from the group consisting of Fe, Ni, Co, and a combination thereof, and at least one substance selected from the group consisting of Cr, TiN and V without recourse to any sapphire substrate.

Abstract: The invention has for its object to provide a process of synthesizing high-purity hBN crystal bodies on a robust substrate even under normal pressure. The inventive process of producing hexagonal boron nitride crystal bodies is characterized by comprising a preparation step of preparing a mixture of a boron nitride raw material and a metal solvent comprising a transition metal, a contact step of bringing a sapphire substrate in contact with the mixture, a heating step of heating the mixture, and a recrystallization step of recrystallizing at normal pressure a melt obtained in the heating step. It is also characterized by using as the metal solvent a transition metal selected from the group consisting of Fe, Ni, Co, and a combination thereof, and at least one substance selected from the group consisting of Cr, TiN and V without recourse to any sapphire substrate.

Abstract: A vapor drying apparatus comprises a processing chamber 1a adapted to contain semiconductor wafers W; a supply nozzle 2 adapted to supply IPA vapor or N2 gas into the processing chamber 1a; a two-fluid nozzle 3 connected to both of an IPA supply source 8 and an N2 gas supply source 5 and adapted to produce a mixed fluid of IPA and N2 gas; a vapor generating apparatus 10 adapted to produce IPA vapor by heating the mixed fluid produced by the two-fluid nozzle 3; an N2 gas supply line 23 connected to the upstream side of the two-fluid nozzle 3; and a mixed fluid supply line 22 connected to the downstream side of the two-fluid nozzle 3. An open-and-close valve V2 is provided on a branch line 25 connecting the N2 gas supply line 23 and the mixed fluid supply line 22.

Abstract: Disclosed is a fluid heating apparatus including a halogen lamp 23, and a tubular structure 26 surrounding the heating lamp and having a fluid inlet 24 and a fluid outlet 25. The tubular structure 26 comprises plural straight pipes 26a arrayed circumferentially around the halogen lamp 26, with adjacent straight pipes 26a being in contact with each other, or being slightly spaced from each other. At least the surfaces, facing the halogen lamp 26, of the straight pipes 26a are coated with a black paint 27, or a radiant-light-absorbing paint.

Abstract: Disclosed is a fluid heating apparatus including a halogen lamp 23, and a tubular structure 26 surrounding the heating lamp and having a fluid inlet 24 and a fluid outlet 25. The tubular structure 26 comprises plural straight pipes 26a arrayed circumferentially around the halogen lamp 26, with adjacent straight pipes 26a being in contact with each other, or being slightly spaced from each other. At least the surfaces, facing the halogen lamp 26, of the straight pipes 26a are coated with a black paint 27, or a radiant-light-absorbing paint.

Abstract: A vapor drying apparatus comprises a processing chamber 1a adapted to contain semiconductor wafers W; a supply nozzle 2 adapted to supply IPA vapor or N2 gas into the processing chamber 1a; a two-fluid nozzle 3 connected to both of an IPA supply source 8 and an N2 gas supply source 5 and adapted to produce a mixed fluid of IPA and N2 gas; a vapor generating apparatus 10 adapted to produce IPA vapor by heating the mixed fluid produced by the two-fluid nozzle 3; an N2 gas supply line 23 connected to the upstream side of the two-fluid nozzle 3; and a mixed fluid supply line 22 connected to the downstream side of the two-fluid nozzle 3. An open-and-close valve V2 is provided on a branch line 25 connecting the N2 gas supply line 23 and the mixed fluid supply line 22.

Abstract: A method and apparatus for cooling a rod of a coil form, immediately after the hot-rolling thereof and within which the rod, whose loops are spaced a given pitch from one another, is laid flat upon a chain conveyor, and more particularly upon rails thereof, and transported therealong by means of endless chains, includes the cooling of the rod with cooling fluid or air which is introduced from below the cooling floors through means of nozzle portions formed within the bodies of the cooling floors. The method and apparatus features the arrangement and construction, including the configuration, of the nozzle portions thus formed, the cooling fluid being projected upwardly at an angle within the range of 10.degree.-70.degree. with respect to the plane of the cooling bed, and horizontally at an angle within the range of 10.degree.-150.degree.