Patents by Inventor Osamu Yuzawa

Osamu Yuzawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6221728
    Abstract: In a method for manufacturing a semiconductor device having a mixture of a MOSFET and a low-resistance resistive element, after etching a tungsten silicide film which will serve as the resistive element to achieve a prescribed shape, thermal processing is performed for the purpose of activating a diffusion layer of the MOSFET, thereby achieving a low-resistance tungsten silicide film.
    Type: Grant
    Filed: March 9, 1999
    Date of Patent: April 24, 2001
    Assignee: NEC Corporation
    Inventor: Osamu Yuzawa
  • Patent number: D549186
    Type: Grant
    Filed: June 5, 2006
    Date of Patent: August 21, 2007
    Assignee: Moritex Corporation
    Inventor: Osamu Yuzawa