Abstract: A chemical-mechanical planarization pad for semiconductor manufacturing is provided. The pad comprises synthetic fibers that are non-crimped fibers which are present in an amount of 1.0% by weight to 98.0% by weight in the mat and wherein the non-crimped fibers have a length of 0.1 cm to 127 cm and a diameter of 1.0 to 1000 micrometers.

Abstract: The present disclosure relates to a chemical mechanical planarization pad and a method of making and using a chemical mechanical planarization pad. The chemical mechanical planarization pad may include a first component including a water soluble composition and water insoluble composition exhibiting a solubility in water of less than that of the water soluble composition, wherein at least one of the water soluble and water insoluble compositions of the first component is formed of fibers. The chemical mechanical planarization pad may also include a second component, wherein the first component is present as a discrete phase in a continuous of the second component.

Abstract: An aspect of the present disclosure relates to a chemical mechanical planarization pad including a first domain and a second continuous domain wherein the first domain includes discrete elements regularly spaced within the second continuous domain. The pad may be formed by forming a plurality of openings for a first domain within a second continuous domain of the pad, wherein the openings are regularly spaced within the second domain, and forming the first domain within the plurality of openings in second continuous domain. In addition, the pad may be used in polishing a substrate with a polishing slurry.

Abstract: A polishing pad and a method of producing a polishing pad. The method includes providing a mold, having a first cavity and a second cavity, wherein the first cavity defines a recess, providing a polymer matrix material including void forming elements in the recess, forming a polishing pad and removing at least a portion of the elements from the polishing pad forming void spaces within the polishing pad by one of a chemical method or mechanical method, prior to use in chemical/mechanical planarization procedures.

Abstract: A chemical-mechanical planarization polishing pad is provided comprising a network of elements dispersed within a polymer, a plurality of voids formed in the pad and at least a portion of said network of elements is connected to at least a portion of the voids. A method of forming the pad is also disclosed, which comprises providing a composition, the composition comprising a network of elements and at least one of a polymer or a reactive prepolymer, introducing a gas to the composition and using the gas to produce a plurality of voids in the composition. A method of forming voids is also disclosed, which relies upon the application of a force to the network of elements within the polymer or reactive polymer, followed by removal of the force and void formation.

Abstract: The present disclosure relates to a polishing pad. The polishing pad may include a polymer layer having a three-dimensional network therein and a composite layer having the ability to equalize pressure across the pad surface, including a first adhesive wherein the composite exhibits a hydrostatic modulus of 1 to 500 psi when compressed at a pressure of 1 to 50 psi.

Abstract: The present disclosure relates to a polishing pad including a chemical agent present in an amount sufficient to be released and dissolving into an aqueous abrasive particle polishing medium during chemical mechanical planarization and reducing abrasive particle agglomeration and a binder. The pad includes a surface such that as the pad is abraded the surface is renewed exposing at least a portion of the chemical agent.

Abstract: A chemical mechanical polishing pad. The pad includes a surface and a polymer matrix capable of transmitting at least a portion of incident radiation. In addition, at least one embedded structure in the polymer matrix, including a portion of the pad where the embedded structure is not present, and a window integral to the pad defined by the portion of the pad where the embedded structure is not present.

Abstract: The present disclosure is directed at a chemical-mechanical planarization polishing pad comprising interconnecting elements and a polymer filler material, wherein the interconnecting elements include interconnecting junction points that are present at a density of 1 interconnecting junction point/cm3 to 1000 interconnecting junction points/cm3, and wherein the interconnecting elements have a length between interconnection junction points of 0.1 microns to 20 cm.

Abstract: A polishing pad for polishing semiconductors and other planar substrates in the presence of a slurry comprising abrasive particles and a dispersive agent is disclosed. The polishing pad includes a soluble component within a polymer matrix component. The soluble component includes particles soluble in the slurry sufficiently to provide a void structure in the polishing surface of the pad. The void structure enhances the polishing rate and uniformity by increasing the mobility of the abrasive particles while reducing scratching of the polished surface. Additives that further enhance polishing and/or assist in the removal of residues generated during polishing, such as surfactants and removers, are optionally incorporated in the soluble particles or topographically coated on the soluble particles.

Abstract: A polishing pad for polishing semiconductors and other planar substrates in the presence of a slurry comprising abrasive particles and a dispersive agent is disclosed. The polishing pad includes a soluble component within a polymer matrix component. The soluble component includes particles soluble in the slurry sufficiently to provide a void structure in the polishing surface of the pad. The void structure enhances the polishing rate and uniformity by increasing the mobility of the abrasive particles while reducing scratching of the polished surface. Additives that further enhance polishing and/or assist in the removal of residues generated during polishing, such as surfactants and removers, are optionally incorporated in the soluble particles or topographically coated on the soluble particles.

Abstract: A polishing pad for polishing semiconductors and other planar substrates in the presence of a slurry comprising abrasive particles and a dispersive agent is disclosed. The polishing pad includes a soluble component, preferably fibrous, within a polymer matrix component. The fibrous component includes fibers soluble in the slurry sufficiently to provide a void structure in the polishing surface of the pad. The void structure enhances the polishing rate and uniformity by increasing the mobility of the abrasive particles while reducing scratching of the polished surface. Additives that further enhance polishing and/or assist in the removal of residues generated during polishing, such as surfactants and removers, are optionally incorporated in the fibrous substance or topographically coated on the fibrous substance.