Abstract: A three-dimensional integrated circuit (3D-IC) architecture incorporates multiple layers, each layer including at least one die and at least one switch to connect the dies on the different layers. In some aspects, a power distribution network (PDN) is routed from a first layer through the switches to supply power to at least one other layer, thereby reducing routing congestion on the layers. The switches can be placed around the periphery of an IC package to improve heat dissipation (e.g., by improving heat transfer from the center to the edge of the IC package). The switches can be used for routing test signals and/or other signals between layers, thereby improving test functionality and/or fault recovery.

Abstract: A three-dimensional integrated circuit (3D-IC) architecture incorporates multiple layers, each layer including at least one die and at least one switch to connect the dies on the different layers. In some aspects, a power distribution network (PDN) is routed from a first layer through the switches to supply power to at least one other layer, thereby reducing routing congestion on the layers. The switches can be placed around the periphery of an IC package to improve heat dissipation (e.g., by improving heat transfer from the center to the edge of the IC package). The switches can be used for routing test signals and/or other signals between layers, thereby improving test functionality and/or fault recovery.

Abstract: A circuit and a method of operation to reduce dynamic and static power dissipation in the circuit are disclosed. The circuit is multi-threshold, voltage-biased and includes a p-channel field effect transistor (FET) and an n-channel FET. A source terminal of the p-channel FET interconnects to a higher-voltage rail of a power supply and a source terminal of the n-channel FET interconnects to a lower-voltage rail of the power supply. At least one of the FETs includes a back contact. The circuit may be operated by applying a fixed bias voltage to the back contact. The fixed bias voltage is independent of the power supply voltage which may be varied. In a normal state, the supply voltage is adjusted to decrease dynamic power consumption. In a low power state, the supply voltage is further adjusted to limit leakage current. The circuit may optionally include a second fixed biasing voltage source so that both FETs are biased.

Abstract: A cross-coupled, latching voltage level converter to convert a signal from a first voltage domain to a second voltage domain and hold an output logic level is disclosed. The converter includes back-to-back first and second inverter circuits coupled to a first voltage source operable at a first voltage level. A transistor is coupled between an output of the first inverter and ground potential, the first transistor having a gate coupled to an input signal operable at a second voltage level. A second transistor is coupled between the output of the second inverter and ground potential, the second transistor having a gate coupled to an inverse of the input signal operable at the second voltage, wherein a terminal of the second transistor delivers an output signal operable at the first voltage level and corresponding to the same logic state as the input signal.