Abstract: An interconnect structure including a gouging feature at the bottom of one of the via openings and a method of forming the same are provided. In accordance with the present invention, the method of forming the interconnect structure does not disrupt the coverage of the deposited diffusion barrier in the overlying line opening, nor does it introduce damages caused by Ar sputtering into the dielectric material including the via and line openings. In accordance with the present invention, such an interconnect structure contains a diffusion barrier layer only within the via opening, but not in the overlying line opening. This feature enhances both mechanical strength and diffusion property around the via opening areas without decreasing volume fraction of conductor inside the line openings.