Abstract: Embodiments of a method for applying a thermal-interface material are described. During this method, a first surface of a heat-removal device and a second surface of a semiconductor die are prepared. Next, a region on a given surface, which is at least one of the first surface and the second surface, is defined. Then, the thermal-interface material is applied to at least the region, where the thermal-interface material includes a material that is a liquid metal over a range of operating temperatures of the semiconductor die.

Abstract: Embodiments of an apparatus are described. This apparatus includes a semiconductor-die layer mechanically coupled to a semiconductor die, and a heat-removal-device layer mechanically coupled to a heat-removal device. Moreover, a thermal-interface material is included between the semiconductor die and the heat-removal device, where the thermal-interface material is mechanically coupled to a region of the semiconductor-die layer and to a region of the heat-removal-device layer. Additionally, a boundary material is mechanically coupled to the semiconductor-die layer and the heat-removal-device layer, where the thermal-interface material is contained in a cavity defined, at least in part, by the semiconductor-die layer, the boundary material, and the heat-removal-device layer.

Abstract: Embodiments of an apparatus that functions as a storage system for components are described. This apparatus includes a containment vessel enclosing a desiccant and a device. This device includes a layer mechanically coupled to a component, where the component can be one of a semiconductor die and a heat-removal device. Moreover, a thermal-interface material is coupled to a region of the layer, and a boundary material is mechanically coupled to the layer, where a perimeter defined by the boundary-material surrounds the region.

Abstract: Embodiments of a method for applying a thermal-interface material are described. During this method, a first surface of a heat-removal device and a second surface of a semiconductor die are prepared. Next, a region on a given surface, which is at least one of the first surface and the second surface, is defined. Then, the thermal-interface material is applied to at least the region, where the thermal-interface material includes a material that is a liquid metal over a range of operating temperatures of the semiconductor die.

Abstract: Packaged surface mount (SMT) chips having matched top contacts and bottom contacts are stacked. Chip features are selected to provide the desired connectivity between chip layers with a greater ease of manufacture. In one embodiment, additional spacing and routing layers are optionally provided between layers. In another, chips are differentiated by optionally providing different conductor and/or nonvolatile cell configurations. In yet another, a minority of a substrate's contacts are configured for aligning with a dielectric region of a spacing layer or substrate to create very low capacitance signal paths between stacked chips.