Patents by Inventor Oshi Wakamatsu

Oshi Wakamatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for forming air gaps in shallow trench isolation trenches for NAND memory
    Patent number: 9779983
    Abstract: A method of forming a shallow trench isolation trench in a semiconductor substrate is described. The method includes forming a trench in a region of the substrate, forming a first dielectric material in the trench, forming a second dielectric material above the first dielectric material, forming a first air gap in the first dielectric material in the trench, and forming a second air gap in the second dielectric material above the first air gap.
    Type: Grant
    Filed: May 28, 2015
    Date of Patent: October 3, 2017
    Assignee: SanDisk Technologies LLC
    Inventors: Oshi Wakamatsu, Yasuhiro Domae
  • SHALLOW TRENCH ISOLATION TRENCHES AND METHODS FOR NAND MEMORY
    Publication number: 20160351435
    Abstract: A method of forming a shallow trench isolation trench in a semiconductor substrate is described. The method includes forming a trench in a region of the substrate, forming a first dielectric material in the trench, forming a second dielectric material above the first dielectric material, forming a first air gap in the first dielectric material in the trench, and forming a second air gap in the second dielectric material above the first air gap.
    Type: Application
    Filed: May 28, 2015
    Publication date: December 1, 2016
    Applicant: SANDISK TECHNOLOGIES INC.
    Inventors: Oshi Wakamatsu, Yasuhiro Domae