Abstract: Methods of forming transistors, e.g., FinFETs, are described. A conformal liner layer is formed in a trench. A metal nitride material is introduced in regular or semi-regular intervals during a metal gap fill of a trench structure to prevent the formation of voids (air gaps) within the structure. The metal nitride material and the metal gap fill material may be deposited by atomic layer deposition methods.

Abstract: An electronic arrangement (101) for providing a number of organizations with tailored cybersecurity training, a number of users being associated with an organization and each of the number of users being further associated with an electronic user device (106), the arrangement comprising a data interface (134) and at least one processor (102) that is configured, in accordance with instructions (136) stored in a memory (138) accessible to the at least one processor, to receive asset information (104) related to a plurality of digital assets that are available for use for one or more users of said number of users associated with the organization, and preferably for each user of said number of users associated with the organization: receive user information (108) related to a user, determine, based on the received information (104, 08, 110), at least one risk factor that is indicative of a cybersecurity risk related to use of at least one of the digital assets, determine, based on the received information, the re