Abstract: A metrology system may include an optical metrology tool configured to produce an optical metrology output for one or more features on a processed substrate, and a metrology machine learning model that has been trained using a training set of (i) profiles, critical dimensions, and/or contours for a plurality of features, and (ii) optical metrology outputs for the plurality of features. The metrology machine learning model may be configured to: receive the optical metrology output from the optical metrology tool; and output the profile, critical dimension, and/or contour of the one or more features on the processed substrate.

Abstract: Provided herein are methods and apparatus for characterizing high aspect ratio (HAR) structures of fabricated or partially fabricated semiconductor devices. The methods involve using small angle X-ray scattering (SAXS) to determine average parameters of an array of HAR structures. In some implementations, SAXS is used to analyze symmetry of HAR structures in a sample and may be referred to as tilted structural symmetry analysis-SAXS (TSSA-SAXS) or TSSA. Analysis of parameters such as tilt, sidewall angle, bowing, and the presence of multiple tilts in HAR structures may be performed.

Abstract: A metrology system may include an optical metrology tool configured to produce an optical metrology output for one or more features on a processed substrate, and a metrology machine learning model that has been trained using a training set of (i) profiles, critical dimensions, and/or contours for a plurality of features, and (ii) optical metrology outputs for the plurality of features. The metrology machine learning model may be configured to: receive the optical metrology output from the optical metrology tool; and output the profile, critical dimension, and/or contour of the one or more features on the processed substrate.

Abstract: Provided herein are methods and apparatus for characterizing high aspect ratio (HAR) structures of fabricated or partially fabricated semiconductor devices. The methods involve using small angle X-ray scattering (SAXS) to determine average parameters of an array of HAR structures. In some implementations, SAXS is used to analyze symmetry of HAR structures in a sample and may be referred to as tilted structural symmetry analysis-SAXS (TSSA-SAXS) or TSSA. Analysis of parameters such as tilt, sidewall angle, bowing, and the presence of multiple tilts in HAR structures may be performed.

Abstract: Methods for laser induced ablation spectroscopy are disclosed. A position sensor, and position motors can move a sample stage in three independent spatial coordinate directions, and a stage position control circuit can move an analysis sample site to selected coordinate positions for ablation. Light from laser ablation can be gathered into a lightguide fiber bundle that is subdivided into branches. One branch can convey a first portion of the light to a broadband spectrometer operable to analyze a relatively wide spectral segment, and a different branch can convey a second portion of the light to a high dispersion spectrometer operable to measure minor concentrations and/or trace elements. Emissions can be simultaneously analyzed in various ways using a plurality of spectrometers having distinct and/or complementary capabilities, and isotope analysis of a sample can be performed.