Abstract: Disclosed herein are an apparatus for multi-protocol-based Quantum Key Distribution (QKD) transmission and an apparatus for multi-protocol-based QKD reception. The apparatus for QKD transmission may include a light source for generating an optical signal and an encoder for performing polarization or phase encoding of the optical signal according to a protocol, and the apparatus for QKD reception may include a decoder for performing decoding by controlling polarization of a received optical pulse according to a protocol and a measuring device for detecting the polarization or phase of the optical pulse.

Abstract: Disclosed herein are an apparatus and method for mutual authentication of quantum entities based on Measurement-Device-Independent Quantum Key Distribution (MDI-QKD). The method may include configuring a quantum input form based on an authentication key shared in advance with a counterpart entity, applying polarization modulation to the configured quantum input form, transmitting the quantum input form to which polarization modulation is applied to a quantum measurement device, and authenticating the counterpart entity by checking whether the counterpart entity configures a quantum input form according to the shared authentication key using a measurement result and information about polarization modulation.

Abstract: Disclosed herein is a quantum key distribution apparatus. The quantum key distribution apparatus includes an optical pulse in which information for private key generation is included is transmitted to multiple receivers, respectively, through different communication paths, and the optical pulse is generated at a speed higher than an optical pulse measurement speed of each of the multiple receivers by a multiple of a number of multiple receivers.

Abstract: Disclosed herein are an apparatus and method for mutual authentication of quantum entities based on Measurement-Device-Independent Quantum Key Distribution (MDI-QKD). The method may include configuring a quantum input form based on an authentication key shared in advance with a counterpart entity, applying polarization modulation to the configured quantum input form, transmitting the quantum input form to which polarization modulation is applied to a quantum measurement device, and authenticating the counterpart entity by checking whether the counterpart entity configures a quantum input form according to the shared authentication key using a measurement result and information about polarization modulation.

Abstract: A device and method for quantum key distribution (QKD). The QKD center includes an authentication key sharing unit for sharing authentication keys with QKD client devices; a quantum key generation unit for generating a sifted key for each of the QKD client devices using a quantum state; an error correction unit for generating output bit strings by correcting errors of the sifted keys; and a bit string operation unit for calculating an encryption bit string by performing a cryptographic operation on the authentication keys, the distribution output bit strings and output bit strings received from the QKD client devices. The present invention improves security by preventing the QKD center from being aware of keys shared among users.

Abstract: A device and method for quantum key distribution (QKD). The QKD center includes an authentication key sharing unit for sharing authentication keys with QKD client devices; a quantum key generation unit for generating a sifted key for each of the QKD client devices using a quantum slate; an error correction unit for generating output bit strings by correcting errors of the sifted keys; and a bit string operation unit for calculating an encryption bit string by performing a cryptographic operation on the authentication keys, the distribution output bit strings and output bit strings received from the QKD client devices. The present invention improves security by preventing the QKD center from being aware of keys shared among users.

Abstract: Provided is a transparent polycarbonate composition that includes: (A) 5 to 95 wt % of biphenyl modified polycarbonate including a repeating unit represented by Chemical Formula 1, a repeating unit represented by Chemical Formula 2, and a repeating unit represented by Chemical Formula 3; and (B) 1 to 50 wt % of an acrylate-based copolymer including (B-1) a repeating unit derived from aromatic (meth)acrylate having a refractive index of 1.58 to 1.70 and (B-2) a repeating unit derived from a mono-functional unsaturated monomer.

Abstract: Provided is a transparent polycarbonate composition that includes: (A) 5 to 95 wt % of biphenyl modified polycarbonate including a repeating unit represented by Chemical Formula 1, a repeating unit represented by Chemical Formula 2, and a repeating unit represented by Chemical Formula 3; and (B) 1 to 50 wt % of an acrylate-based copolymer including (B-1) a repeating unit derived from aromatic (meth)acrylate having a refractive index of 1.58 to 1.70 and (B-2) a repeating unit derived from a mono-functional unsaturated monomer.

Abstract: A mounting structure of a fender side cover, which is mounted between fenders disposed on both sides of a vehicle, a car body, and a hood hinge may include a hinge pin extending in a vehicle width direction on a side portion of the hood hinge, a rear mounting portion formed at a rear of the fender side cover and mounting the fender side cover to the hinge pin so as to be rotationally and laterally movable, and a front mounting portion formed on a front side of the fender side cover and inserted into a fender through-hole formed in the fender to couple the fender side cover to the fender, in which the fender side cover is mounted on the fender regardless of the type of the hood hinge and is moved along with the fender.

Abstract: A mounting structure of a fender side cover, which is mounted between fenders disposed on both sides of a vehicle, a car body, and a hood hinge may include a hinge pin extending in a vehicle width direction on a side portion of the hood hinge, a rear mounting portion formed at a rear of the fender side cover and mounting the fender side cover to the hinge pin so as to be rotationally and laterally movable, and a front mounting portion formed on a front side of the fender side cover and inserted into a fender through-hole formed in the fender to couple the fender side cover to the fender, in which the fender side cover is mounted on the fender regardless of the type of the hood hinge and is moved along with the fender.

Abstract: Methods of forming integrated circuit devices include forming a field effect transistor having a gate electrode, a sacrificial spacer on a sidewall of the gate electrode and silicided source/drain regions. The sacrificial spacer is used as an implantation mask when forming highly doped portions of the source/drain regions. The sacrificial spacer is then removed from the sidewall of the gate electrode. A stress-inducing electrically insulating layer, which is configured to induce a net tensile stress (for NMOS transistors) or compressive stress (for PMOS transistors) in a channel region of the field effect transistor, is then formed on the sidewall of the gate electrode.

Abstract: Methods of forming integrated circuit devices include forming a field effect transistor having a gate electrode, a sacrificial spacer on a sidewall of the gate electrode and silicided source/drain regions. The sacrificial spacer is used as an implantation mask when forming highly doped portions of the source/drain regions. The sacrificial spacer is then removed from the sidewall of the gate electrode. A stress-inducing electrically insulating layer, which is configured to induce a net tensile stress (for NMOS transistors) or compressive stress (for PMOS transistors) in a channel region of the field effect transistor, is then formed on the sidewall of the gate electrode.

Abstract: Methods of forming integrated circuit devices include depositing an electrically insulating layer onto an integrated circuit substrate having integrated circuit structures thereon. This deposition step results in the formation of an electrically insulating layer having an undulating surface profile, which includes at least one peak and at least one valley adjacent to the at least one peak. A non-uniform thickening step is then performed. This non-uniform thickening step includes thickening a portion of the electrically insulating layer by redepositing portions of the electrically insulating layer from the least one peak to the at least one valley. This redeposition occurs using a sputter deposition technique that utilizes the electrically insulating layer as a sputter target.

Abstract: Methods of forming integrated circuit devices include forming a field effect transistor having a gate electrode, a sacrificial spacer on a sidewall of the gate electrode and silicided source/drain regions. The sacrificial spacer is used as an implantation mask when forming highly doped portions of the source/drain regions. The sacrificial spacer is then removed from the sidewall of the gate electrode. A stress-inducing electrically insulating layer, which is configured to induce a net tensile stress (for NMOS transistors) or compressive stress (for PMOS transistors) in a channel region of the field effect transistor, is then formed on the sidewall of the gate electrode.

Abstract: Disclosed herein is a colorless and transparent antibiotic material including silver and a method of preparing the same. Specifically, the current invention pertains to a method of preparing a colorless and transparent antibiotic material including silver (Ag), which includes a) reacting a salt including a silver ion (Ag+) with a salt including a sulfate anion, to prepare a silver (Ag)-sulfate complex; and b) diluting the silver (Ag)-sulfate complex prepared in a) with water, and to an antibiotic material prepared using the method. Further, the current invention pertains to an antibiotic material including silver, which is harmless to the human body and exhibits disinfecting and antibiotic activities, and as well, is colorless and transparent and does not easily form colored oxides, unlike conventional silver-based antibiotic materials, and to a method of preparing such an antibiotic material.

Abstract: Methods of forming integrated circuit devices include depositing an electrically insulating layer onto an integrated circuit substrate having integrated circuit structures thereon. This deposition step results in the formation of an electrically insulating layer having an undulating surface profile, which includes at least one peak and at least on valley adjacent to the at least one peak. A non-uniform thickening step is then performed. This non-uniform thickening step includes thickening a portion of the electrically insulating layer by redepositing portions of the electrically insulating layer from the least one peak to the at least one valley. This redeposition occurs using a sputter deposition technique that utilizes the electrically insulating layer as a sputter target.

Abstract: Disclosed herein is a fluorescent light source including an yttria layer. Specifically, the current invention provides a fluorescent light source having high quality and a long lifetime, which can prevent a decrease in initial luminance of a fluorescent light source, including a fluorescent lamp, and resist the radiation of ultraviolet light and the permeation of mercury, which are the causes of deterioration of the fluorescent light source, so as not to decrease the luminance in proportion to the lighting time of the fluorescent light source, thus assuring both initial luminance properties and luminance properties after use for a long period of time. Such a fluorescent light source includes glass, a fluorescent material layer, and an absorbing layer composed mainly of yttria particles formed between the glass and the fluorescent material layer or on the inner surface of the fluorescent material layer.

Abstract: A method is provided for manufacturing a semiconductor memory device, particularly ferroelectric devices, in which an interlayer dielectric (ILD) layer formed on an upper part of a semiconductor substrate containing a capacitor structure is etched under conditions in which the plasma electron temperature is maintained in a range between 2.0 eV and 4.0 eV to open contact holes to expose the capacitor structure and thereby avoid degradation of the device characteristics.

Abstract: An improved method of manufacturing a capacitor structure for a ferroelectric random access memory (FeRAM) device on an active matrix having a first insulating layer comprising the steps of forming a buffer on the first insulating layer, a bottom electrode on the buffer, a capacitor thin film on the bottom electrode and a top electrode on the capacitor thin film. A second insulating layer is formed on the top electrode, the capacitor thin film and the first insulating layer, and then patterned and etched only once to form both a storage node contact hole and a cell plate contact hole. The capacitor structure is completed by forming a metal interconnection pattern on the second insulating layer and the contact holes to provide connection to the storage node and the cell plate.

Abstract: There is provided a method for fabricating a ferroelectric memory device, which can prevent the deterioration of the ferroelectric characteristics from etching damage generated during etching process of the interlayer-insulating layer formed over the capacitor to form a contact hole. The present invention is characterized by etching the interlayer-insulating layer with the use of time-modulated plasma, namely pulsed-power plasma. Accordingly, the present invention can prevent the deterioration of the ferroelectric characteristics from etching, omit or reduce the later separate thermal process for recovering the etching damage and enhance the reliability of device.