Abstract: A self-powered electronic system comprises a first chip (401) of single-crystalline semiconductor embedded in a second chip (302) of single-crystalline semiconductor shaped as a container bordered by ridges. The assembled chips are nested and form an electronic device assembled, in turn, in a slab of weakly p-doped low-grade silicon shaped as a container (330) bordered by ridges (331). The flat side (335) of the slab includes a heavily n-doped region (314) forming a pn-junction (315) with the p-type bulk. A metal-filled deep silicon via (350) through the p-type ridge (331) connects the n-region with the terminal (322) on the ridge surface as cathode of the photovoltaic cell with the p-region as anode. The voltage across the pn-junction serves as power source of the device.

Abstract: A electronic multi-output device having a substrate including a pad and pins. A composite first chip has a first and a second transistor integrated so that the first terminals of the transistors are merged into a common terminal on one chip surface. Patterned second and third terminals are on the opposite chip surface. The common first terminal is attached to the substrate pad. The second terminals are connected by discrete first and second metal clips to respective substrate pins. A composite second chip has a third and a fourth transistor integrated so that the second terminals of the transistors are merged into a common terminal on one chip surface. Patterned first and third terminals are on the opposite chip surface. The second chip is flipped to be vertically attached with its first terminals to the first and second clips, respectively. The third terminals are connected by discrete clips to respective substrate pins. The common second terminal is connected by a common clip to a substrate pin.

Abstract: A self-powered electronic system comprises a first chip (401) of single-crystalline semiconductor embedded in a second chip (302) of single-crystalline semiconductor shaped as a container bordered by ridges. The assembled chips are nested and form an electronic device assembled, in turn, in a slab of weakly p-doped low-grade silicon shaped as a container (330) bordered by ridges (331). The flat side (335) of the slab includes a heavily n-doped region (314) forming a pn-junction (315) with the p-type bulk. A metal-filled deep silicon via (350) through the p-type ridge (331) connects the n-region with the terminal (322) on the ridge surface as cathode of the photovoltaic cell with the p-region as anode. The voltage across the pn-junction serves as power source of the device.

Abstract: Disclosed embodiments relate to a semiconductor device. A semiconductor device is fabricated by attachment of a first chip to a first surface of a pad of a leadframe. Each of one or more terminals of the first chip is connected to a respective lead of the leadframe. The first chip and the first surface of the pad are then encapsulated in a packaging material, while leaving an opposite second surface of the pad exposed. A second chip is attached to a recessed portion of the second surface of the pad so that at least one terminal of the second chip is substantially coplanar with an un-recessed portion of the second surface. In one embodiment, a third chip is also attached to the recessed portion of the second surface so that at least one terminal of the third chip is substantially coplanar with the un-recessed portion of the second surface.

Abstract: An integrated circuit (“IC”) assembly includes an IC die with a metallization layer on a top surface thereof. A plurality of lead wires are bonded at first end portions thereof to the metallization layer. A conductive layer is attached to the metallization layer and covers the first ends of the lead wires.

Abstract: A power supply system has a leadframe with leads and a pad. The pad surface facing a circuit board has a portion recessed with a depth and an outline suitable for attaching side-by-side the sync and the control FET semiconductor chips. The input terminal of the control FET and the grounded output terminal of the sync FET are coplanar with the un-recessed portion of the pad (switch node terminal) so that all terminals can be directly attached to contacts of a circuit board. A driver-and-control chip is vertically stacked to the opposite pad surface and encapsulated in a packaging compound.

Abstract: A system has a leadframe with leads and a pad. The pad surface having a portion recessed with a depth and an outline suitable for attaching a semiconductor chip. A first chip is vertically stacked to the opposite pad surface. A clip is vertically stacked on the first chip and tied to a lead. A second chip has a terminal attached to the recessed portion and terminals co-planar with the un-recessed portion. A second chip is attached to the clip.

Abstract: A power supply system has a leadframe with leads and a pad. The pad surface facing a circuit board has a portion recessed with a depth and an outline suitable for attaching side-by-side the sync and the control FET semiconductor chips. The input terminal of the control FET and the grounded output terminal of the sync FET are coplanar with the un-recessed portion of the pad (switch node terminal) so that all terminals can be directly attached to contacts of a circuit board. A driver-and-control chip is vertically stacked to the opposite pad surface and encapsulated in a packaging compound.

Abstract: An electronic multi-output device has a substrate including a first pad, a second pad and a plurality of pins. A first chip with a first transistor has a first terminal on one chip surface and a second and third terminals on the opposite chip surface. The first chip with its first terminal is tied to the first pad. A second chip with a second transistor has a first terminal on one chip surface and a second and third terminals on the opposite chip surface. The second chip with its first terminal is tied to the second pad. The second terminals are connected by a discrete first metal clip and a second metal clip to respective substrate pins. A composite third chip has a third and a fourth transistor integrated so that the first terminals of the transistors are on one chip surface. The second terminals are merged into a common terminal. The patterned third terminals are on the opposite chip surface. The first terminals are vertically attached to the first and second metal clips, respectively.

Abstract: An electronic system comprises a first chip of single-crystalline semiconductor shaped as a hexahedron and including a first electronic device embedded in a second chip of single-crystalline semiconductor shaped as a container having a slab bordered by retaining walls, and including a second electronic device. The container shaped as a slab bordered by the retaining walls and including conductive traces and terminals. The first chip is attached to the slab of second chip, forming nested chips. The first and second chips embedded in the container. The nested first and second chips are operable as an electronic system and the container is operable as the package of the system.

Abstract: A method for fabricating an electronic multi-output device. A substrate having a pad and pins is provided. A first chip is provided having a first and a second transistor integrated so that the first terminals of the transistors are merged into a common terminal on one chip surface and the patterned second and third terminals are on the opposite chip surface. The common first terminal is attached to the substrate pad. A driver and control chip is attached to the substrate pad adjacent to the first chip. The second terminals of the first and second transistors are connected by discrete first and second gang clips to respective substrate pins. A second chip is provided having a third and a fourth transistor integrated so that the second terminals of the transistors are merged into a common terminal on one chip surface. Patterned first and third terminals are on the opposite chip surface. The second chip is flipped to attach the first terminals vertically to the first and second gang clips.

Abstract: A packaged electronic system comprises a slab (210) of low-grade silicon (l-g-Si) configured as ridges (114) framing a depression of depth (112) including a recessed central area suitable to accommodate semiconductor chips and embedded electrical components, the depth at least equal to the thickness of the chips and the components, the ridge covered by system terminals (209b) connected to attachment pads in the central area; and semiconductor chips (120, 130) having a thickness and terminals on at least one of opposing chip sides, the chips terminals attached to the central area terminals so that the opposite chip side is coplanar with the system terminals on the slab ridge.

Abstract: A packaged transistor device (100) comprises a semiconductor chip (101) including a transistor with terminals distributed on the first and the opposite second chip side; and a slab (110) of low-grade silicon (l-g-Si) configured as a ridge (111) framing a depression including a recessed central area suitable to accommodate the chip, the ridge having a first surface in a first plane and the recessed central area having a second surface in a second plane spaced from the first plane by a depth (112) at least equal to the chip thickness, the ridge covered by device terminals (120; 121) connected to attachment pads in the central area having the terminals of the first chip side attached so that the terminals (103) of the opposite second chip side are co-planar with the device terminals on the slab ridge.

Abstract: A self-powered electronic system comprises a first chip (401) of single-crystalline semiconductor embedded in a second chip (302) of single-crystalline semiconductor shaped as a container bordered by ridges. The assembled chips are nested and form an electronic device assembled, in turn, in a slab of weakly p-doped low-grade silicon shaped as a container (330) bordered by ridges (331). The flat side (335) of the slab includes a heavily n-doped region (314) forming a pn-junction (315) with the p-type bulk. A metal-filled deep silicon via (350) through the p-type ridge (331) connects the n-region with the terminal (322) on the ridge surface as cathode of the photovoltaic cell with the p-region as anode. The voltage across the pn-junction serves as power source of the device.

Abstract: A power supply system has a QFN leadframe with leads and a pad. The pad surface facing a circuit board has a portion recessed with a depth and an outline suitable for attaching side-by-side the sync and the control FET semiconductor chips. The input terminal of the control FET and the grounded output terminal of the sync FET are coplanar with the un-recessed portion of the pad (switch node terminal) so that all terminals can be directly attached to contacts of a circuit board. A driver-and-control chip is vertically stacked to the opposite pad surface and encapsulated in a packaging compound.

Abstract: An electronic system comprises a first chip (101) of single-crystalline semiconductor including a first electronic device embedded in a second chip (102) of single-crystalline semiconductor shaped as a container having a slab (104) bordered by ridges (103), and including a second electronic device. The nested chips are assembled in a container of low-grade silicon shaped as a slab 130 bordered by retaining walls 131 and including conductive traces and terminals. The first electronic device is connected to the second electronic device by attaching the first chip onto the slab of the second chip; and the first and second electronic devices are connected to the container by embedding the second chip in the container, wherein the nested first and second chips operate as an electronic system and the container operates as the package of the system. For first and second devices as field effect transistors, the system is a power block.

Abstract: A method for fabricating an electronic multi-output device. A substrate having a pad and pins is provided. A first chip is provided having a first and a second transistor integrated so that the first terminals of the transistors are merged into a common terminal on one chip surface and the patterned second and third terminals are on the opposite chip surface. The common first terminal is attached to the substrate pad. A driver and control chip is attached to the substrate pad adjacent to the first chip. The second terminals of the first and second transistors are connected by discrete first and second gang clips to respective substrate pins. A second chip is provided having a third and a fourth transistor integrated so that the second terminals of the transistors are merged into a common terminal on one chip surface. Patterned first and third terminals are on the opposite chip surface. The second chip is flipped to attach the first terminals vertically to the first and second gang clips.

Abstract: An electronic multi-output device has a substrate including a first pad, a second pad and a plurality of pins. A first chip with a first transistor has a first terminal on one chip surface and a second and third terminals on the opposite chip surface. The first chip with its first terminal is tied to the first pad. A second chip with a second transistor has a first terminal on one chip surface and a second and third terminals on the opposite chip surface. The second chip with its first terminal is tied to the second pad. The second terminals are connected by a discrete first metal clip and a second metal clip to respective substrate pins. A composite third chip has a third and a fourth transistor integrated so that the first terminals of the transistors are on one chip surface. The second terminals are merged into a common terminal. The patterned third terminals are on the opposite chip surface. The first terminals are vertically attached to the first and second metal clips, respectively.

Abstract: A electronic multi-output device having a substrate including a pad and pins. A composite first chip has a first and a second transistor integrated so that the first terminals of the transistors are merged into a common terminal on one chip surface. Patterned second and third terminals are on the opposite chip surface. The common first terminal is attached to the substrate pad. The second terminals are connected by discrete first and second metal clips to respective substrate pins. A composite second chip has a third and a fourth transistor integrated so that the second terminals of the transistors are merged into a common terminal on one chip surface. Patterned first and third terminals are on the opposite chip surface. The second chip is flipped to be vertically attached with its first terminals to the first and second clips, respectively. The third terminals are connected by discrete clips to respective substrate pins. The common second terminal is connected by a common clip to a substrate pin.

Abstract: A system has a leadframe with leads and a pad. The pad surface having a portion recessed with a depth and an outline suitable for attaching a semiconductor chip. A first chip is vertically stacked to the opposite pad surface. A clip is vertically stacked on the first chip and tied to a lead. A second chip has a terminal attached to the recessed portion and terminals co-planar with the un-recessed portion. A second chip is attached to the clip.