Abstract: A method for producing a transistor structure with a lightly doped drain (LDD) includes structuring a gate electrode on a gate dielectric. The method also includes etching the semiconductor body or substrate to form sloping sidewails on regions adjacent to the gate electrode, and anisotropically back-etching the spacer layer to form spacers. The gate electrode is used as a mask to implant dopant to form a source region, a drain region, and regions of lower dopant concentration. Implanting dopant is performed at a first angle relative to the upper surface of the semiconductor body or substrate to form the source and drain regions, and at a second angle relative to the upper surface of the semiconductor body or substrate, and through the spacers, to form the regions of lower dopant concentration. The first angle is greater than the second angle.

Abstract: The substrate (1) is etched such that on the source side and on the drain side downward sloping sidewalls (5) are formed adjacent to the gate electrode (3) and sloping downward from it. Spacers (7) are positioned there. An implantation (9) of dopant is performed at a low angle relative to the upper surface, through the spacers (7), in order to form the regions (11) of lower dopant concentration, and an implantation (10) of dopant is performed at a high angle relative to the upper surface in order to form the source and drain regions (12).