Abstract: Controllable semiconductor element with an active semiconductor path controlled by means of conductivity modulation.The structure corresponds to a semiconductor arrangement with applied conductive strips. On the lower side of a semiconductor layer (1), a metal layer (2) is applied. The upper side is covered with an insulation layer (3) on which extends conductive strip (4). At the beginning of conductive strip (4) and beneath at metal layer (2), the input terminals (7) and (8) are provided. At the end of conductive strip (4) and beneath, at metal layer (2), output terminals (11) and (12) are arranged. Besides, at conductive strip (4) and metal layer (2), the control terminals (15) and (16) are applied.If at the two input terminals (7) and (8) an input signal is applied of a frequency which is higher than the dielectric relaxation frequency a corresponding wave propagates from the input along the semiconductive layer (1), and can be derived at the output as an output signal.

Abstract: a field effect transistor having a channel width of such small dimension that threshold voltage becomes inversely related to channel width allowing the fabrication of field effect transistors of differing threshold voltages while using the same process steps. Reduced threshold voltage due to prior art "short channel length" effect may be offset by the presently disclosed narrow channel width effect. Desired chanel impedance values are achieved independently of threshold voltage influence due to narrow channel width effect by the provision of parallel-connected field effect transistors of the same channel length whose total channel widths yield a desired net width-to-length ratio.