Abstract: A design structure embodied in a machine readable medium to improve performance of an SRAM cell or an SRAM array comprising a plurality of SRAM cells is described. The design structure includes a write circuit for an SRAM cell or an SRAM array. The write circuit includes a gate to switch the write circuit on and off. The cell is supplied by a first, higher voltage. The cell is accessible for read and write operations via at least one bit line connected to a write circuit. The cell is further addressable by at least one word line in order to access it by the bit line. To access the cell for read or write operations, the word line is supplied by the first, higher voltage and the bit line is supplied by a second, lower voltage. During write operations, the write circuit is driven by the first, higher voltage while the bit lines are still at the lower voltage.

Abstract: A method to improve performance of an SRAM cell or an SRAM array comprising a plurality of SRAM cells is described. The cell is supplied by a first, higher voltage. The cell is accessible for read and write operations via at least one bit line connected to a write circuit. The cell is further addressable by at least one word line in order to access it by the bit line. To access the cell for read or write operations, the word line is supplied by the first, higher voltage and the bit line is supplied by a second, lower voltage. During write operations, the write circuit is driven by the first, higher voltage while the bit lines are still at the lower voltage. An SRAM cell, an SRAM array plus a write circuit used to perform the method are also described.

Abstract: A design structure embodied in a machine readable medium to improve performance of an SRAM cell or an SRAM array comprising a plurality of SRAM cells is described. The design structure includes a write circuit for an SRAM cell or an SRAM array. The write circuit includes a gate to switch the write circuit on and off. The cell is supplied by a first, higher voltage. The cell is accessible for read and write operations via at least one bit line connected to a write circuit. The cell is further addressable by at least one word line in order to access it by the bit line. To access the cell for read or write operations, the word line is supplied by the first, higher voltage and the bit line is supplied by a second, lower voltage. During write operations, the write circuit is driven by the first, higher voltage while the bit lines are still at the lower voltage.

Abstract: A method to improve performance of an SRAM cell or an SRAM array comprising a plurality of SRAM cells is described. The cell is supplied by a first, higher voltage. The cell is accessible for read and write operations via at least one bit line connected to a write circuit. The cell is further addressable by at least one word line in order to access it by the bit line. To access the cell for read or write operations, the word line is supplied by the first, higher voltage and the bit line is supplied by a second, lower voltage. During write operations, the write circuit is driven by the first, higher voltage while the bit lines are still at the lower voltage. An SRAM cell, an SRAM array plus a write circuit used to perform the method are also described.

Abstract: A device and method for storing information including an array of memory cells organized in bitlines and wordlines. The bitlines are subdivided in sections of wordlines and the sectioned bitlines are connected to a global bitline by a connector. The connector is made bidirectional and uses the high order part of the wordline addresses for this section of bitlines as a disable reset command. The reset stays active for unselected portions, compensating leakage of a mass of unselected cells which could disturb valid read signals.

Abstract: A device and method for storing information including an array of memory cells organized in bitlines and wordlines. The bitlines are subdivided in sections of wordlines and the sectioned bitlines are connected to a global bitline by a connector. The connector is made bidirectional and uses the high order part of the wordline addresses for this section of bitlines as a disable reset command. The reset stays active for unselected portions, compensating leakage of a mass of unselected cells which could disturb valid read signals.

Abstract: The present invention relates to content addressable memory (CAM), particularly, to a CAM having its memory array, which contains a plurality of memory locations, being divided into at least a first and a second memory block (100, 102), whereby the first and second memory block (100, 102) are formed by a first and second portion of each of said memory locations, respectively. The CAM further comprises a first set of compare lines (115) and a first set-of match lines (116) associated to said first memory block (100), and a second set of compare lines (117) and a second set of match lines (118) associated to said second memory block (102), and pre-charge units (112, 114) for charging said match lines before a comparison operation. The present invention provides an improved CAM which allows flagging of memory locations of which the content only partially matches a given comparison value.

Abstract: The present invention relates to content addressable memory (CAM), particularly, to a CAM having its memory array, which contains a plurality of memory locations, being divided into at least a first and a second memory block (100, 102), whereby the first and second memory block (100, 102) are formed by a first and second portion of each of said memory locations, respectively. The CAM further comprises a first set of compare lines (115) and a first set of match lines (116) associated to said first memory block (100), and a second set of compare lines (117) and a second set of match lines (118) associated to said second memory block (102), and pre-charge units (112, 114) for charging said match lines before a comparison operation. The present invention provides an improved CAM which allows flagging of memory locations of which the content only partially matches a given comparison value.