Patents by Inventor Ottomar Jantsch

Ottomar Jantsch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for producing bi-polar charge coupled devices by ion-implantation
    Patent number: 4231810
    Abstract: A charge coupled device (CCD-device) for sensors and memory is produced so as to have a bipolar structure, with the doped regions and zones thereof being produced by ion implantation whereby a greater structure density is attained along with a reduction in the transfer coefficient .epsilon..
    Type: Grant
    Filed: August 13, 1979
    Date of Patent: November 4, 1980
    Assignee: Siemens Aktiengesellschaft
    Inventors: Ottomar Jantsch, Jeno Tihanyi
  • Apparatus and method for producing a sectional view of a body
    Patent number: 4166957
    Abstract: An improved apparatus and method for producing a sectional view of a body in a short time in which rays such as X-rays or gamma rays are directed in a fan shaped beam through a cross section plane of the body element in different directions and the absorption of the radiation detected by a receiver scintillator whose photons release electrons which are subsequently accelerated and then converted into electrical signals.
    Type: Grant
    Filed: August 25, 1977
    Date of Patent: September 4, 1979
    Assignee: Siemens Aktiengesellschaft
    Inventor: Ottomar Jantsch
  • Apparatus for the implementation of a method for producing a sectional view of a body
    Patent number: 4119841
    Abstract: In a scanner for producing a sectional view of a body spatially resolving semiconductors, each having a charge transfer element associated therewith at which the formation of the signal is accomplished by charge storage and charge transfer in a semiconductor body, are utilized.
    Type: Grant
    Filed: March 29, 1976
    Date of Patent: October 10, 1978
    Assignee: Siemens Aktiengesellschaft
    Inventors: Ottomar Jantsch, Karl Reiss
  • Pressure transducer
    Patent number: 4080830
    Abstract: A pressure transducer of miniature design with a silicon diaphragm which is provided with a monolithic resistor arrangement, the resistance of which changes with the deformation of the diaphragm in which the diaphragm is arranged between two overload bodies, one of which rests on a support body, whose surfaces facing the diaphragm are each provided with a pressure chamber and pressure canals to obtain an overload-proof pressure transducer which is very small and can be used for measuring large pressure differences.
    Type: Grant
    Filed: April 18, 1977
    Date of Patent: March 28, 1978
    Assignee: Siemens Aktiengesellschaft
    Inventors: Paul Eckstein, Ottomar Jantsch, Bernd Reimann
  • Strip type radiation detector and method of making same
    Patent number: 4060822
    Abstract: An improved strip detector and a method for making such a detector in which a high resistivity N conduction semiconductor body has electrode strips formed thereon by diffusion which strips are formed so as to be covered by an oxide layer at the surface point of the PN junction and in which the opposite side of the semiconductor body then has a substantial amount of material etched away to form a thin semiconductor upon which strip electrodes which are perpendicular to the electrodes on the first side are then placed.
    Type: Grant
    Filed: February 24, 1976
    Date of Patent: November 29, 1977
    Assignee: Siemens Aktiengesellschaft
    Inventors: Ottomar Jantsch, Ingmar Feigt, Wolf Rudiger Willig
  • Strip type radiation detector and method of making same
    Patent number: 3939555
    Abstract: An improved strip detector and a method for making such a detector in which a high resistivity N conduction semiconductor body has electrode strips formed thereon by diffusion which strips are formed so as to be covered by an oxide layer at the surface point of the PN junction and in which the opposite side of the semiconductor body then has a substantial amount of material etched away to form a thin semiconductor upon which strip electrodes which are perpendicular to the electrodes on the first side are then placed.
    Type: Grant
    Filed: June 27, 1973
    Date of Patent: February 24, 1976
    Assignee: Siemens Aktiengesellschaft
    Inventors: Ottomar Jantsch, Ingmar Feigt, Wolf Rudiger Willig