Abstract: A display device includes: a base layer including a display region and a non-display region in the base layer; a circuit layer on the base layer; and an element layer on the circuit layer, and including a light emitting element, wherein the circuit layer includes: a pixel circuit connected to the light emitting element; a data line connected to the pixel circuit; a vertical connecting line spaced apart from the data line in a first direction, and extending in a second direction; and a horizontal connecting line connecting the vertical connecting line to the data line in the display region, and extending in the first direction, wherein the pixel circuit includes a transistor including an oxide semiconductor pattern, wherein the horizontal connecting line includes an overlap part overlapping with a connecting pattern extending from the oxide semiconductor pattern, and wherein the transistor includes a gate overlapping with the overlap part.

Abstract: A display device includes: a substrate; a first transistor including: a first semiconductor layer on the substrate; and a first gate electrode on the first semiconductor layer; a second transistor including: a second semiconductor layer on the first gate electrode; and a second gate electrode on the second semiconductor layer; an insulating structure between the first gate electrode and the second gate electrode; and a first transfer pattern at a same layer as that of the second gate electrode, electrically connected to the first gate electrode through a contact hole passing through the insulating structure, and including a first layer and a second layer on the first layer. The first layer includes a first portion in the contact hole, and a second portion outside the contact hole. A thickness of the second portion of the first layer is in a range of about 450 ? to 800 ?.

Abstract: A display device includes: a display panel including a display area and a surrounding area surrounding the display area; a gate driver in the surrounding area of the display panel; and a bottom panel below the display panel and including a cutout area having a width in a range of 1 micrometers (?m) to 160 ?m in a first direction in a plan view.

Abstract: A display device includes a substrate including a first area, a display area surrounding the first area, and a peripheral area surrounding the display area and including a bent area; a display unit including pixels; a driving circuit in the peripheral area; and a fan-out unit in the peripheral area and including a first wiring portion and a second wiring portion apart from each other in the bent area. The first wiring portion includes first wirings. Each of the first wirings includes a first portion extending in a first direction between the display unit and the bent area, and a second portion extending in a second direction. A width of the first portion is greater than a width of the second portion.

Abstract: A display apparatus includes a substrate, a first pixel, a voltage line set, and a connection conductive layer. The substrate includes a transmission area, a display area, and a first non-display area. The display area surrounds the transmission area. The first non-display area is positioned between the transmission area and the display area. No image-displaying pixels are positioned on the transmission area or the first non-display area. The first pixel is arranged on the display area and includes a display element and a pixel circuit. The voltage line set is electrically connected to the pixel circuit and overlaps both the display area and the first non-display area. The connection conductive layer is positioned on the first non-display area, surrounds the transmission area, and is electrically connected to the voltage line set. A material of the voltage line is identical to a material of the connection conductive layer.

Abstract: A display apparatus includes a substrate, a first pixel, a voltage line set, and a connection conductive layer. The substrate includes a transmission area, a display area, and a first non-display area. The display area surrounds the transmission area. The first non-display area is positioned between the transmission area and the display area. No image-displaying pixels are positioned on the transmission area or the first non-display area. The first pixel is arranged on the display area and includes a display element and a pixel circuit. The voltage line set is electrically connected to the pixel circuit and overlaps both the display area and the first non-display area. The connection conductive layer is positioned on the first non-display area, surrounds the transmission area, and is electrically connected to the voltage line set. A material of the voltage line is identical to a material of the connection conductive layer.

Abstract: A display device includes a substrate including a first area, a display area surrounding the first area, and a peripheral area surrounding the display area and including a bent area; a display unit including pixels; a driving circuit in the peripheral area; and a fan-out unit in the peripheral area and including a first wiring portion and a second wiring portion apart from each other in the bent area. The first wiring portion includes first wirings. Each of the first wirings includes a first portion extending in a first direction between the display unit and the bent area, and a second portion extending in a second direction. A width of the first portion is greater than a width of the second portion.

Abstract: A spin torque magnetic RAM according to the present invention includes at least one row selection line positioned on a silicon substrate to induce a spin orbit interaction therein; at least one first magnetic pattern positioned on the row selection line; a second magnetic pattern positioned on the first magnetic pattern; a tunnel barrier positioned on the second magnetic pattern; and a third magnetic pattern positioned on the tunnel barrier, wherein the first magnetic pattern is made of a cobalt film, the first magnetic pattern and the second magnetic pattern have a total thickness of 5 nm to form a free layer, and the third magnetic pattern is formed with a pinned layer in which a magnetization direction is fixed.

Abstract: A spin torque magnetic RAM according to the present invention includes at least one row selection line positioned on a silicon substrate to induce a spin orbit interaction therein; at least one first magnetic pattern positioned on the row selection line; a second magnetic pattern positioned on the first magnetic pattern; a tunnel barrier positioned on the second magnetic pattern; and a third magnetic pattern positioned on the tunnel barrier, wherein the first magnetic pattern is made of a cobalt film, the first magnetic pattern and the second magnetic pattern have a total thickness of 5 nm to form a free layer, and the third magnetic pattern is formed with a pinned layer in which a magnetization direction is fixed.

Abstract: Techniques, systems, and devices are disclosed for implementing a quasi-linear spin-torque nano-oscillator based on exertion of a spin-transfer torque on the local magnetic moments in the magnetic layer and precession of the magnetic moments in the magnetic layer within a spin valve. Examples of spin-torque nano-oscillators (STNOs) are disclosed to use spin polarized currents to excite nano magnets that undergo persistent oscillations at RF or microwave frequencies. The spin currents are applied in a non-uniform manner to both excite the nano magnets into oscillations and generate dynamic damping at large amplitude as a feedback to reduce the nonlinearity associated with mixing amplitude and phase fluctuations.

Abstract: Techniques, systems, and devices are disclosed for implementing a quasi-linear spin-torque nano-oscillator based on exertion of a spin-transfer torque on the local magnetic moments in the magnetic layer and precession of the magnetic moments in the magnetic layer within a spin valve. Examples of spin-torque nano-oscillators (STNOs) are disclosed to use spin polarized currents to excite nano magnets that undergo persistent oscillations at RF or microwave frequencies. The spin currents are applied in a non-uniform manner to both excite the nano magnets into oscillations and generate dynamic damping at large amplitude as a feedback to reduce the nonlinearity associated with mixing amplitude and phase fluctuations.