Patents by Inventor Oul Cho
Oul Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240141231Abstract: A semiconductor nanocrystal including an anion of an inorganic metal salt and a first organic ligand bound to a surface of the semiconductor nanocrystal, wherein the first organic ligand includes a substituted or unsubstituted C6 to C30 aromatic ring group and a carboxylate, a substituted or unsubstituted C3 to C30 aromatic hetero cyclic group and a carboxylate, or a combination thereof.Type: ApplicationFiled: December 11, 2023Publication date: May 2, 2024Inventors: Kwanghee KIM, Tae Hyung KIM, Hongkyu SEO, Won Sik YOON, Jaeyong LEE, Eun Joo JANG, Oul CHO
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Patent number: 11963376Abstract: A light emitting device includes: a first electrode and a second electrode facing each other, an emissive layer disposed between the first electrode and the second electrode and including a quantum dot, an electron auxiliary layer disposed between the emissive layer and the second electrode and including a plurality of nanoparticles, and a polymer layer between a portion of the second electrode and the electron auxiliary layer, wherein the nanoparticles include a metal oxide including zinc, wherein the second electrode has a first surface facing a surface of the electron auxiliary layer and a second surface opposite to the first surface, and the polymer layer is disposed on a portion of the second surface and a portion of the surface of the electron auxiliary layer, and wherein the polymer layer includes a polymerization product of a thiol compound and an unsaturated compound having at least two carbon-carbon unsaturated bonds.Type: GrantFiled: September 14, 2022Date of Patent: April 16, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tae Ho Kim, Won Sik Yoon, Jeong Hee Lee, Eun Joo Jang, Oul Cho
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Patent number: 11925044Abstract: A light emitting device includes: a first electrode and a second electrode facing each other, an emissive layer disposed between the first electrode and the second electrode and including a quantum dot, an electron auxiliary layer disposed between the emissive layer and the second electrode and including a plurality of nanoparticles, and a polymer layer between a portion of the second electrode and the electron auxiliary layer, wherein the nanoparticles include a metal oxide including zinc, wherein the second electrode has a first surface facing a surface of the electron auxiliary layer and a second surface opposite to the first surface, and the polymer layer is disposed on a portion of the second surface and a portion of the surface of the electron auxiliary layer, and wherein the polymer layer includes a polymerization product of a thiol compound and an unsaturated compound having at least two carbon-carbon unsaturated bonds.Type: GrantFiled: September 14, 2022Date of Patent: March 5, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tae Ho Kim, Won Sik Yoon, Jeong Hee Lee, Eun Joo Jang, Oul Cho
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Publication number: 20240074222Abstract: An electroluminescent device includes a quantum dot layer disposed between a first electrode and a second electrode, and an electron transport layer disposed between the quantum dot layer and the second electrode; wherein the quantum dot layer is configured to emit a first light, the quantum dot layer including first quantum dots, wherein the first quantum dots include a first semiconductor nanocrystal, wherein the electron transport layer includes zinc oxide nanoparticles, wherein the electroluminescent device further comprises a first layer between the quantum dot layer and the electron transport layer, the first layer including inorganic nanoparticles, wherein the inorganic nanoparticles has a different composition from the zinc oxide nanoparticles and the first quantum dots, and wherein the inorganic nanoparticles comprises a metal chalcogenide having a bandgap energy of greater than or equal to about 2.9 electron volts (eV) and less than or equal to about 10 eV.Type: ApplicationFiled: August 31, 2023Publication date: February 29, 2024Inventors: Oul CHO, Kwanghee KIM, Yuho WON, Jae Yong LEE, Taehyung KIM
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Patent number: 11917841Abstract: A light-emitting device including a first electrode, a second electrode, and a light-emitting film disposed between the first electrode and the second electrode, and a method of producing the device. The light-emitting film includes a fluorine-containing organic salt, and quantum dots that do not include cadmium, lead, or a combination thereof, and the fluorine-containing organic salt includes a substituted or unsubstituted C1 to C30 hydrocarbon group, a non-metallic element, fluorine, and at least one of boron or phosphorus, and the non-metallic element includes carbon, nitrogen, oxygen, phosphorus, sulfur, or selenium.Type: GrantFiled: December 16, 2020Date of Patent: February 27, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jaejun Chang, Kwanghee Kim, Won Sik Yoon, Eun Joo Jang, Oul Cho
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Patent number: 11884858Abstract: A semiconductor nanocrystal including an anion of an inorganic metal salt and a first organic ligand bound to a surface of the semiconductor nanocrystal, wherein the first organic ligand includes a substituted or unsubstituted C6 to C30 aromatic ring group and a carboxylate, a substituted or unsubstituted C3 to C30 aromatic hetero cyclic group and a carboxylate, or a combination thereof.Type: GrantFiled: May 5, 2021Date of Patent: January 30, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kwanghee Kim, Tae Hyung Kim, Hongkyu Seo, Won Sik Yoon, Jaeyong Lee, Eun Joo Jang, Oul Cho
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Publication number: 20230371297Abstract: A light emitting device including a first electrode and a second electrode facing each other, a quantum dot emission film disposed between the first electrode and the second electrode, and a charge auxiliary layer disposed between the emission film and the first electrode, between the emission film and the second electrode, or between the emission film and the first electrode and between the emission film and the second electrode, wherein the quantum dot emission film includes a first surface facing the charge auxiliary layer and an opposite second surface. A manufacturing method of making the light emitting device, and a display device including the same.Type: ApplicationFiled: July 26, 2023Publication date: November 16, 2023Inventors: Oul CHO, Kwanghee KIM, Eun Joo JANG
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Patent number: 11800733Abstract: A light emitting device including a first electrode and a second electrode facing each other, a quantum dot emission film disposed between the first electrode and the second electrode, and a charge auxiliary layer disposed between the emission film and the first electrode, between the emission film and the second electrode, or between the emission film and the first electrode and between the emission film and the second electrode, wherein the quantum dot emission film includes a first surface facing the charge auxiliary layer and an opposite second surface. A manufacturing method of making the light emitting device, and a display device including the same.Type: GrantFiled: October 10, 2019Date of Patent: October 24, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Oul Cho, Kwanghee Kim, Eun Joo Jang
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Patent number: 11793011Abstract: A quantum dot device includes: a first electrode and a second electrode facing each other; a quantum dot layer between the first electrode and the second electrode, and an electron auxiliary layer between the quantum dot layer and the second electrode, the electron auxiliary layer including a first nanoparticle and a second nanoparticle which is larger than the first nanoparticle, wherein a work function of the first electrode is greater than a work function of the second electrode, and wherein a difference between a lowest unoccupied molecular orbital energy level of the quantum dot layer and a lowest unoccupied molecular orbital energy level of the electron auxiliary layer is less than about 1.1 electronvolts.Type: GrantFiled: July 28, 2021Date of Patent: October 17, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung Woo Kim, Tae Ho Kim, Eun Joo Jang, Hongkyu Seo, Sang Jin Lee, Dae Young Chung, Oul Cho
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Patent number: 11784282Abstract: A quantum dot display device includes a substrate, a quantum dot diode disposed on the substrate and including a first electrode, a second electrode, and a quantum dot layer between the first electrode and the second electrode, and an encapsulation film disposed on a surface of the quantum dot diode, wherein a water vapor transmission rate of the encapsulation film is about 0.001 to about 1 gram per square meter per day at 1 atmosphere of pressure.Type: GrantFiled: October 21, 2019Date of Patent: October 10, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Oul Cho, Eun Joo Jang, Tae Hyung Kim
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Patent number: 11737301Abstract: An electroluminescent device including a first electrode, a hole transport layer disposed on the first electrode, a first emission layer disposed on the hole transport layer, the first emission layer including a first light emitting particle on which a first ligand and a second ligand having a hole transporting property are attached, a second emission layer disposed on the first emission layer, the second emission layer including a second light emitting particle on which a first ligand and a third ligand having an electron transporting property are attached, an electron transport layer disposed on the second emission layer, and a second electrode disposed on the electron transport layer, wherein a solubility of the second ligand in a solvent is different than a solubility of the third ligand in the solvent and a display device including the same.Type: GrantFiled: April 9, 2021Date of Patent: August 22, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dae Young Chung, Moon Gyu Han, Oul Cho, Tae Hyung Kim, Sujin Park, Hongkyu Seo, Eun Joo Jang
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Publication number: 20230235220Abstract: An electroluminescent device including a first electrode, a second electrode, and a light-emitting layer disposed between the first electrode and the second electrode, the light-emitting layer including a plurality of semiconductor nanoparticles, wherein the light-emitting layer is configured to emit green light, wherein the plurality of semiconductor nanoparticles include a first semiconductor nanocrystal including indium, phosphorus, and optionally zinc, and a second semiconductor nanocrystal including a zinc chalcogenide, wherein the zinc chalcogenide includes zinc, selenium, and sulfur, wherein in the plurality of the semiconductor nanoparticles, a mole ratio of zinc to indium is greater than or equal to about 60:1, and wherein the electroluminescent device is configured to exhibit a T90 of greater than or equal to about 120 hours as measured with an initial driving luminance of about 2700 nit.Type: ApplicationFiled: January 26, 2023Publication date: July 27, 2023Inventors: Jihyun MIN, Eun Joo JANG, Hyo Sook JANG, Yong Seok HAN, Ilyoung LEE, Oul CHO
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Patent number: 11710448Abstract: A light emitting element includes a first electrode, a second electrode, and a light emission layer interposed between the first electrode and the second electrode, where an emission efficiency of the light emission layer varies based on a voltage applied to at least one selected from the first electrode and the second electrode.Type: GrantFiled: January 18, 2022Date of Patent: July 25, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Oul Cho, Tae Hyung Kim, Ilyoung Lee, Eun Joo Jang, Won Sik Yoon
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Publication number: 20230104394Abstract: An electroluminescent device including a first electrode and a second electrode spaced apart from each other (e.g., each electrode having a surface opposite the other), and a light emitting layer disposed between the first electrode and the second electrode, and an electron transport layer disposed between the light emitting layer and the second electrode, wherein the light emitting layer includes semiconductor nanoparticles, wherein the electron transport layer includes a plurality of zinc oxide nanoparticles, and wherein the electron transport layer further includes an alkali metal and a halogen.Type: ApplicationFiled: September 30, 2022Publication date: April 6, 2023Inventors: Heejae LEE, Dae-Hee LEE, Oul CHO, Taehyung KIM, Eun Joo JANG, Hyo Sook JANG
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Publication number: 20230094022Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).Type: ApplicationFiled: November 22, 2022Publication date: March 30, 2023Inventors: Tae Hyung KIM, Yuho WON, Eun Joo JANG, Heejae CHUNG, Oul CHO
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Publication number: 20230043694Abstract: A light emitting device includes: a first electrode and a second electrode facing each other, an emissive layer disposed between the first electrode and the second electrode and including a quantum dot, an electron auxiliary layer disposed between the emissive layer and the second electrode and including a plurality of nanoparticles, and a polymer layer between a portion of the second electrode and the electron auxiliary layer, wherein the nanoparticles include a metal oxide including zinc, wherein the second electrode has a first surface facing a surface of the electron auxiliary layer and a second surface opposite to the first surface, and the polymer layer is disposed on a portion of the second surface and a portion of the surface of the electron auxiliary layer, and wherein the polymer layer includes a polymerization product of a thiol compound and an unsaturated compound having at least two carbon-carbon unsaturated bonds.Type: ApplicationFiled: September 14, 2022Publication date: February 9, 2023Inventors: Tae Ho KIM, Won Sik YOON, Jeong Hee LEE, Eun Joo JANG, Oul CHO
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Patent number: 11569469Abstract: A light emitting device, a method of manufacturing the same, and a display device including the same are disclosed. The light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, the emission layer including quantum dots, and a charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer includes a first surface facing the charge auxiliary layer and an opposite second surface, the quantum dots include a first organic ligand on a surface of the quantum dots, in the emission layer, an amount of the first organic ligand in a portion adjacent to the first surface is larger than an amount of the first organic ligand in a portion adjacent to the second surface.Type: GrantFiled: March 18, 2021Date of Patent: January 31, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dae Young Chung, Kwanghee Kim, Hongkyu Seo, Eun Joo Jang, Oul Cho, Tae Hyung Kim, Yuho Won, Hee Jae Lee
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Patent number: 11512254Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).Type: GrantFiled: September 29, 2020Date of Patent: November 29, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tae Hyung Kim, Yuho Won, Eun Joo Jang, Heejae Chung, Oul Cho
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Patent number: 11450826Abstract: A light emitting device includes: a first electrode and a second electrode facing each other, an emissive layer disposed between the first electrode and the second electrode and including a quantum dot, an electron auxiliary layer disposed between the emissive layer and the second electrode and including a plurality of nanoparticles, and a polymer layer between a portion of the second electrode and the electron auxiliary layer, wherein the nanoparticles include a metal oxide including zinc, wherein the second electrode has a first surface facing a surface of the electron auxiliary layer and a second surface opposite to the first surface, and the polymer layer is disposed on a portion of the second surface and a portion of the surface of the electron auxiliary layer, and wherein the polymer layer includes a polymerization product of a thiol compound and an unsaturated compound having at least two carbon-carbon unsaturated bonds.Type: GrantFiled: October 29, 2020Date of Patent: September 20, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tae Ho Kim, Won Sik Yoon, Jeong Hee Lee, Eun Joo Jang, Oul Cho
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Patent number: 11444242Abstract: A resistive memory device including a first electrode and a second electrode facing each other and a variable resistance layer disposed between the first electrode and the second electrode, wherein the variable resistance layer includes cadmium-free quantum dots (Cd-free quantum dots) and at least a portion of the Cd-free quantum dots include a Cd-free quantum dot including a halide anion on a surface of the Cd-free quantum dot, a method of manufacturing the same and an electronic device.Type: GrantFiled: December 3, 2019Date of Patent: September 13, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kwanghee Kim, Heejae Lee, Oul Cho, Tae Hyung Kim, Eun Joo Jang