Abstract: A method of manufacturing a packaged surface acoustic wave filter chip is disclosed. The method can include providing a structure having first interdigital transducer electrodes formed with a first piezoelectric layer, second interdigital transducer electrodes formed with a second piezoelectric layer, and a substrate between the first and second piezoelectric layers. The method can include forming a plurality of through electrodes extending at least partially through a thickness of the structure such that a first set of through electrodes of the plurality of through electrodes are electrically connected to the first interdigital transducer electrodes and a second set of through electrodes of the plurality of through electrodes are electrically isolated from the first interdigital transducer electrodes.

Abstract: A surface acoustic wave filter is disclosed. The surface acoustic wave filter includes a substrate, and first and second surface acoustic wave filter structures disposed on first and second main surfaces of the substrate, respectively. The first surface acoustic wave filter structure includes a first piezoelectric layer a plurality of first surface acoustic wave resonators formed on a top surface of the first piezoelectric layer, and a first wiring layer connecting the first surface acoustic wave resonators to each other. The second surface acoustic wave filter structure includes a second piezoelectric layer, a plurality of second surface acoustic wave resonators formed on a bottom surface of the second piezoelectric layer, and a second wiring layer connecting the second surface acoustic wave resonators to each other. A plurality of through electrodes extends through the substrate, the first piezoelectric layer, and the second piezoelectric layer.

Abstract: A film bulk acoustic wave resonator (FBAR) is disclosed with raised and recessed frame portions formed in a top electrode. The FBAR can include a substrate, a piezoelectric film supported to oscillate in a direction opposite to a main surface of the substrate, and a pair of top and bottom electrodes formed respectively on top and bottom surfaces of the film. The recessed frame portion and the raised frame portion can be formed to extend adjacent to each other along a periphery of an active region of the film oscillating during an operation of the film on a top surface of the top electrode.

Abstract: A piezoelectric microelectromechanical system microphone comprises a support substrate, a membrane including a piezoelectric material attached to the support substrate and configured to deform and generate an electrical potential responsive to impingement of sound waves on the membrane, and a compliant anchor including a trench defined in the support substrate about a portion of a perimeter of the membrane to increase sensitivity of the piezoelectric microelectromechanical system microphone.

Abstract: A film bulk acoustic wave resonator (FBAR) is disclosed with recessed and raised frame portions in the piezoelectric film. The FBAR can include a substrate, the piezoelectric film supported to oscillate in a direction opposite to a main surface of the substrate, and a pair of top and bottom electrodes formed respectively on top and bottom surfaces of the film. The recessed frame portion and the raised frame portion can be formed in the film to extend adjacent to each other along a periphery of an active region of the film oscillating during an operation of the film on a top surface of the top electrode.