Abstract: Fluid dispensing apparatus (10) for selectively dispensing desired quantities of a fluid under pressure. The apparatus includes a base plate (14) having a dispensing passage (16) extending about a first axis (18); a valve arrangement (20) associated with the dispensing passage (16), and a piezoelectric transducer (22) acting on the valve arrangement (20) to effect displacement of the valve arrangement between a first position in which the dispensing passage (16) is closed and a second position in which the dispensing passage is connected to a source of the fluid under pressure. The valve arrangement (20) includes a slide valve (24), with the slide valve and the piezoelectric transducer (22) being arranged such that during at least initial displacement of the valve arrangement from the second position towards the first position, the slide valve (24) is displaced in a direction transverse to the first axis (18).

Abstract: Fluid dispensing apparatus (10) for selectively dispensing desired quantities of a fluid under pressure. The apparatus includes a base plate (14) having a dispensing passage (16) extending about a first axis (18); a valve arrangement (20) associated with the dispensing passage (16), and a piezoelectric transducer (22) acting on the valve arrangement (20) to effect displacement of the valve arrangement between a first position in which the dispensing passage (16) is closed and a second position in which the dispensing passage is connected to a source of the fluid under pressure. The valve arrangement (20) includes a slide valve (24), with the slide valve and the piezoelectric transducer (22) being arranged such that during at least initial displacement of the valve arrangement from the second position towards the first position, the slide valve (24) is displaced in a direction transverse to the first axis (18).

Abstract: Methods of coating piezoelectric substrates with substantially uniform layers of a semi-conducting material are disclosed including placing the substrate in a heated deposition chamber at reduced pressure and depositing a layer of semiconducting material on the substrate by thermally activated chemical vapor deposition, including admitting a gas bearing the semi-conducting material into the chamber at a pressure of between about 13 and 200 Pa and a temperature of between about 300.degree. and 700.degree.C. so that a layer of semi-conducting material having a desired smoothness is obtained.

Abstract: An electrical contact for connecting a trailer to the electrical system of a towing vehicle is disclosed. The contact includes two contact parts designed to be detachably connected together. One contact part is preferably adapted for fixed mounting and the other for mounting on a cable. One of the contact parts is provided with flat, protruding pins as contact elements and the other contact part is provided with spring-loaded, depressed, flat pins, the ends of which do not protrude beyond the outer limiting wall of the contact part. The pins of the two contact parts are arranged to be pushed toward each other to produce electrical contact between opposing surfaces. The cable-mounted contact part is provided with an upper, protruding front section, designed to be inserted behind a shoulder on the upper rear section of the preferably fixed contact, in order to connect the contact parts by means of a downward lever movement.