Patents by Inventor Oved Naveh

Oved Naveh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8319862
    Abstract: Methods and apparatus for effecting a non-uniformity correction of images of a scene obtained with an array of detector elements are disclosed. A first image of the scene having a first integration period is acquired using the array of detector elements. A second image of the scene having a different integration period is acquired, and a corrected image of the scene is generated by computing a difference of the images. In some embodiments, the first and second images are images of substantially identical scenes. According to some embodiments, the images are infrared images. Optionally, the corrected image is subjected to further correction using pixel dependent correction coefficients, such as gain coefficients. Exemplary image detection elements include but are not limited to InSb detector elements and ternary detector elements, such as InAlSb, MCT (Mercury Cadmium Telluride), and QWIP technology (Quantum Well Infrared Photodiodes).
    Type: Grant
    Filed: January 25, 2007
    Date of Patent: November 27, 2012
    Assignee: Rafael Advanced Defense Systems Ltd.
    Inventors: Shmuel Mangoubi, Oved Naveh
  • Publication number: 20090079854
    Abstract: Methods and apparatus for effecting a non-uniformity correction of images of a scene obtained with an array of detector elements are disclosed. A first image of the scene having a first integration period is acquired using the array of detector elements. A second image of the scene having a different integration period is acquired, and a corrected image of the scene is generated by computing a difference of the images. In some embodiments, the first and second images are images of substantially identical scenes. According to some embodiments, the images are infrared images. Optionally, the corrected image is subjected to further correction using pixel dependent correction coefficients, such as gain coefficients. Exemplary image detection elements include but are not limited to InSb detector elements and ternary detector elements, such as InAlSb, MCT (Mercury Cadmium Telluride), and QWIP technology (Quantum Well Infrared Photodiodes).
    Type: Application
    Filed: January 25, 2007
    Publication date: March 26, 2009
    Applicant: Rafael- Armament Development Authority Ltd.
    Inventors: Shmuel Mangoubi, Oved Naveh