Abstract: A microwave generator and/or methods thereof. A microwave generator may include a plurality of connected sequential sections in cascade. A microwave generator may include a first section and an output section. Each section may include an intermediate conductor, an upper conductor and a lower conductor. A first isolating material having a first thickness may be connected between an intermediate conductor and an upper conductor. A second isolating material having a second thickness may be connected between an intermediate conductor and a lower conductor. A switch may be connected between an intermediate conductor and an upper conductor and/or a lower conductor, forming a switched thickness and an unswitched thickness. The unswitched thickness of an output section is larger than the unswitched thickness of the first section and the increase in unswitched thickness from the first section to the output section includes a monotonic increase.

Abstract: Disclosed is a method of coupling light into a power semiconductor device having a semiconductor structure with two or more layers. The power semiconductor device has multiple cells of functionally identical units linked by multiple interconnects. In each device unit, a patterned electrode layer is disposed on the surface of the semiconductor structure. The method includes illuminating the power semiconductor device by directing a light from a light source through the patterned electrode layer to form an enhanced light coupling with the semiconductor structure. The patterned electrode layer is configured to have a micron scaled grid pattern having multiple metal grids and aperture openings that is based on a distributed resistance model having two characteristic current decay lengths.

Abstract: A microwave generator and/or methods thereof. A microwave generator may include a plurality of connected sequential sections in cascade. A microwave generator may include a first section and an output section. Each section may include an intermediate conductor, an upper conductor and a lower conductor. A first isolating material having a first thickness may be connected between an intermediate conductor and an upper conductor. A second isolating material having a second thickness may be connected between an intermediate conductor and a lower conductor. A switch may be connected between an intermediate conductor and an upper conductor and/or a lower conductor, forming a switched thickness and an unswitched thickness. The unswitched thickness of an output section is larger than the unswitched thickness of the first section and the increase in unswitched thickness from the first section to the output section includes a monotonic increase.

Abstract: In an optically controlled thyristor having a four layer thyristor structure with respective first, second, third and fourth layers, the first and third layers have a first doping type, and the second and fourth layers have a second doping type different from the first doping type. A first shorting structure, formed from a semiconductor material of opposite doping from the first layer, is electrically coupled to the second layer by an electrically conducting, optically opaque layer. A first conductive layer connects between the first layer and the shorting structure and is adapted to transmit light into the first shorting structure. The first semiconductor layer of an optically controlled thyristor may have an aperture therethrough to permit light to enter the second layer from a first conductive layer side without propagating within the first layer.

Abstract: The optical modulator of the invention comprises an electro-optic material (EOD) which modulates optical energy in accordance with an applied voltage. The applied voltage is controlled by a light activated switch, or switches, which vary the magnitude of the voltage applied by switching a charge transfer circuit (or other dc source) of which the EOD forms a capacitive element. The charge transfer circuit preferably includes a plurality of capacitive elements, each charged to a separate voltage, so that when switched by said light activated switches, the voltage applied to the EOD is controlled. When used in a laser cavity, the optical modulator can control the output of the laser in response to optical input signals. The optical modulator may be used for Q-switching the laser cavity, mode-locking the laser, cavity dumping the laser or modulating the output of the laser, or a combination of the above.

Abstract: The optical modulator of the invention comprises an electro-optic material or magneto-optic material EOD which modulates optical energy in accordance with an applied electromagnetic waveform. The electromagnetic waveform impressed in the EOD is controlled by a light activated switch, or switches, which varies the magnitude of the electromagnetic waveform to the EOD by switching portions of a transmission line (of which the EOD forms all or at least a part of the dielectric) in or out. The switch, or switches, may be configured between segments of one of the conductors of the transmission line and may overlay the electro-optic dielectric material. The transmission line may include a plurality of sections, each charged to a selected voltage, so that when switched by said light activated switches, the electromagnetic waveform to the EOD is controlled. When used in a laser cavity, the optical modulator can control the output of the laser cavity in response to optical input control signals.

Abstract: A source for generating energy in the microwave region to a load comprising a transmission line, a semiconductor switch connected between said transmission and said load, said switch being operable, in its open state, to sustain a voltage corresponding to the average maximum electric field physically sustainable by the switch and, in its closed state, to sustain the maximum current density J equal to Wd.sub.3, where W is the width of the switch and d.sub.3 its thickness to thereby supply maximum power to the load and maximum switching speed.

Abstract: A source for generating microwaves using sequential switching of cascaded TEM transmission lines of arbitrary lengths charged to arbitrary voltages where the delay between any two switches is equal to or greater than the temporal length of the transmission line separating them, the first switch activated being the one closest to the load. The source uses an optimized transmission line and switch geometry which yields the highest possible power flow. Various folded configurations of the source which provides added compactness and simplified energizing are also disclosed.

Abstract: Disclosed is a reversible inductive energy transfer device for use where efficient transfer of energy between inductors is required. The apparatus is a current amplifying device which utilizes an energy storage inductor which comprises a plurality of series connected induction elements, the inductor being connected in series with a current source and a load inductor. The series connected induction elements are progressively disconnected from the load inductor in a make-before-break manner. The switching may be accomplished by a mechanical switch or by means of superconducting switches, semiconductor switches or PCT switches. The energy storage inductor comprises a single turn or current loop having a plurality of high conductivity, at least partially mutually coupled current paths. The current is continuously or discretely diverted into progressively smaller current paths in order to amplify the current and transfer energy into the load inductor.

Abstract: Disclosed is a reversible inductive energy transfer device for use where efficient transfer of energy between inductors is required. The apparatus is a current amplifying device which utilizes an induction coil comprising a plurality of series connected induction elements, the induction coil being connected in series with a current source and a load. The series connected induction elements are progressively connected in series with the induction coil across the load beginning at the end of the induction coil electrically distal from the load and ending at the end of the induction coil electrically nearest the load. Adjacent induction elements are progressively connected to the load in a make-before-break manner. The connection may be made either by a sliding contact which makes electrical contact with electrical taps located along the induction coil by means of superconducting switches or semiconductor switches. The storage inductor may also be superconducting.