Abstract: A semiconductor structure for manufacturing a semiconductor package device is provided. The semiconductor structure includes a carrier and a dielectric layer. The carrier has a first surface and a second surface opposite to the first surface. The carrier includes an inner core layer and an exterior clad layer, and the inner core layer is covered by the exterior clad layer. The dielectric layer is formed on the first surface of the carrier. The carrier supports the dielectric layer.

Abstract: A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a carrier. The carrier has a first surface and a second surface opposite to the first surface. The carrier includes an inner core layer and an exterior clad layer, and the inner core layer is covered by the exterior clad layer.

Abstract: A semiconductor package includes a dielectric layer, a plurality of traces, a plurality of electrical pads, a plurality of studs and at least a semiconductor device. The dielectric layer has a first dielectric surface and a second dielectric surface opposite the first dielectric surface. The traces are disposed in the dielectric layer and are exposed on the second dielectric surface. The electrical pads are disposed on the first dielectric surface. The studs are disposed in the dielectric layer and are exposed on the first dielectric surface. The studs are electrically connected to the traces and the electrical pads. The semiconductor device is disposed on the second dielectric surface and electrically connected to the traces.

Abstract: The semiconductor device carrier comprises a conductive carrier, a dielectric layer, a conductive trace layer, a conductive stud layer and the plating conductive layer. The conductive carrier comprises at least one cavity. The dielectric layer has a first dielectric surface and a second dielectric surface opposite the first dielectric surface. The conductive trace layer disposes in the dielectric layer and is exposed on the second dielectric surface. The conductive stud layer disposes in the dielectric layer and is exposed on the first dielectric surface, wherein the conductive stud layer is electrically connected to the conductive trace layer. The plating conductive layer is disposed on the first dielectric surface and the exposed conductive stud layer. The cavity exposes the conductive trace layer and the dielectric layer.

Abstract: The semiconductor device carrier comprises a conductive carrier, a dielectric layer, a conductive trace layer, a conductive stud layer and the plating conductive layer. The conductive carrier comprises at least one cavity. The dielectric layer has a first dielectric surface and a second dielectric surface opposite the first dielectric surface. The conductive trace layer disposes in the dielectric layer and is exposed on the second dielectric surface. The conductive stud layer disposes in the dielectric layer and is exposed on the first dielectric surface, wherein the conductive stud layer is electrically connected to the conductive trace layer. The plating conductive layer is disposed on the first dielectric surface and the exposed conductive stud layer. The cavity exposes the conductive trace layer and the dielectric layer.

Abstract: A conductive carrier having a first surface and a second surface is provided. The conductive trace layer is formed on the second surface of the conductive carrier. A conductive stud layer is formed on the conductive trace layer. A dielectric layer is formed on the conductive layer to encapsulate the conductive trace layer and the conductive stud layer. The conductive stud layer is exposed. A plating conductive layer is formed to envelop the conductive carrier, the dielectric layer and the exposed end of the conductive stud layer. A cavity is formed on the conductive carrier, wherein the conductive trace layer and the dielectric layer are exposed in the cavity. A surface finishing is formed on at least an exposed portion of the conductive stud layer. The plating conductive layer is removed.

Abstract: A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a carrier. The carrier has a first surface and a second surface opposite to the first surface. The carrier includes an inner core layer and an exterior clad layer, and the inner core layer is covered by the exterior clad layer.