Abstract: Three-dimensional (3D) NAND components formed with control circuitry split across two wafers can provide for more area for control circuitry for an array, enabling improved 3D NAND system performance. In one example, a 3D NAND component includes a first die including a three-dimensional (3D) NAND array and first complementary metal oxide semiconductor (CMOS) control circuitry to access the 3D NAND array, and a second die vertically stacked and bonded with the first die, the second die including second CMOS control circuitry to access the 3D NAND array of the first die.

Abstract: Embodiments of the present disclosure are directed towards a memory device with a split staircase, in accordance with some embodiments. In one embodiment, the memory device includes one or more pillars disposed in a die, and a plurality of wordlines formed in a stack of multiple tiers and coupled with the one or more pillars. At least some of the wordlines are split across the tiers into at least first and second portions. Respective ends of at least some wordlines of at least one of the first or second portions, at a location of the split, are exposed to provide electrical coupling with other components of the device. Other embodiments may be described and/or claimed.

Abstract: Wafer-to-wafer bonding is used to form three-dimensional (3D) memory components such as 3D NAND flash memory with shared control circuitry on one die to access arrays on multiple dies. In one example, a non-volatile storage device includes a first die including a 3D array of non-volatile storage cells and CMOS (complementary metal oxide semiconductor) circuitry. A second die including a second 3D array of non-volatile storage cells is vertically stacked and bonded with the first die. At least a portion of the CMOS circuitry of the first die to access both the first 3D array of non-volatile storage cells of the first die and the second 3D array of non-volatile storage cells of the second die.

Abstract: Wafer-to-wafer bonding is used to form three-dimensional (3D) memory components such as 3D NAND flash memory with shared control circuitry on one die to access arrays on multiple dies. In one example, a non-volatile storage device includes a first die including a 3D array of non-volatile storage cells and CMOS (complementary metal oxide semiconductor) circuitry. A second die including a second 3D array of non-volatile storage cells is vertically stacked and bonded with the first die. At least a portion of the CMOS circuitry of the first die to access both the first 3D array of non-volatile storage cells of the first die and the second 3D array of non-volatile storage cells of the second die.

Abstract: A flash memory device having a page buffer circuit providing a shared resource between a flash array controller circuit and a user. The page buffer circuit comprises a Plane A and a Plane B, wherein each of the planes A and B is a static random access memory array. The page buffer circuit further comprises a mode control circuit for enabling access to the planes A and B over a host bus in a user mode and access to the planes A and B by the flash array controller in a flash array controller mode.

Abstract: In a memory array having a plurality of rows and columns of memory devices for storing binary conditions, apparatus for selecting particular memory devices, a sense amplifier for transferring indications of the conditions of selected memory devices, and apparatus for generating signals indicative of conditions other than the state of the memory devices, the improvement including a multiplexor, the multiplexor being arranged to accept as input the output of the sense amplifier and the signals indicative of conditions other than the state of the memory devices, the multiplexor and the apparatus for generating signals indicative of conditions other than the state of the memory devices being positioned in a manner that parasitic capacitance affecting the input to the sense amplifier is not created. The output of the sense amplifier may also be connected to other internal circuits so that the memory array may be accessed while bringing other signals to the output pins.

Abstract: A nonvolatile memory is described that includes a memory array and control circuitry coupled to the memory array for controlling memory operations with respect to the memory array. The control circuitry can operate at a first power supply voltage and a second power supply voltage. A configuration circuit is coupled to receive a power supply voltage indication signal for selectively configuring the control circuitry in accordance with the power supply indication signal to operate at one of the first and second power supply voltages. When the power supply voltage indication signal is in a first state, the configuration circuit configures the control circuitry to operate at the first power supply voltage. When the power supply voltage indication signal is in a second state, the configuration circuit configures the control circuitry to operate at the second power supply voltage.