Abstract: A smart trim die assembly for providing multiple internal operations during a stroke is provided. The smart trim die assembly includes a first die, a second die, and a cavity formed between the first die and second die. A plurality of sensors are located between the first die and the second die for measuring the distance therebetween during a stroke. A series of tools are integrated into one of the first die or second die and each perform one of trimming, piercing, dimpling, and tapping operations. The smart trim die assembly further includes a processor and a memory device for receiving readings from the sensors. The memory device further contains instructions that, when executed by the processor, cause the processor to, in response to the sensor reading a predetermined distance, instruct the series of tools to perform one or more of the operations.

Abstract: A foam material includes the reaction product of a polyol mixture and an isocyanate mixture and a boron nitride filler in an amount of ?0.01 wt. % to ?0.1 wt. %. In various forms, the boron nitride filler is of nanoparticles, is of hexagonal boron nitride, and/or is treated with a silane coupling agent.

Abstract: A foam material includes the reaction product of a polyol mixture and an isocyanate mixture and a boron nitride filer in an amount of ? 0.01 wt. % to ? 0.1 wt. %. In various forms, the boron nitride filer is of nanoparticles, is of hexagonal boron nitride, and/or is treated with a silane coupling agent.

Abstract: A smart trim die assembly for providing multiple internal operations during a stroke. The smart trim die assembly (10) comprises a first die (12), a second die (14), and a cavity (20) formed between the first die and second die. A plurality of sensors (22) are located between the first die and the second die for measuring the distance therebetween during a stroke. A series of tools are integrated into one of the first die or second die and each perform one of trimming, piercing, dimpling, and tapping operations. The smart trim die assembly further includes a processor (210) and a memory device (214) for receiving readings from the sensors. The memory device further contains instructions that, when executed by the processor, cause the processor to, in response to the sensor reading a predetermined distance, instruct the series of tools to perform one or more of the operations.

Abstract: A semiconductor memory device is provided such as a random-access memory (DRAM) including a plurality of DRAM memory cells. Each of the DRAM cells includes an N-type transistor, a P-type transistor, and a common capacitor. The components are disposed in the same direction as the bit-line, with the common capacitor occupying the center region between the N- and P-type transistors. The common capacitor is a metal insulator metal (MIM) capacitor configured by connecting three capacitor elements in parallel. The three capacitors include a first capacitor element formed on a first source/drain region of the N-type transistor, a second capacitor element formed on a first source/drain region of the P-type transistor, and a third element over the field isolation region between the transistors. A bottom electrode of each of these capacitor elements connects the first source/drain region of the N-type transistor to a first source/drain region of the P-type transistor.