Abstract: An inverter based on a compound semiconductor uses a depletion mode transistor as the pull-up device, and a current source to bias the pull-up device. The current source is electrically coupled to a source terminal of the pull-up device. As a result, the current source continues to conduct current through the pull-up device, whether the inverter output is high or low, to ensure rapid response of the inverter.

Abstract: Apparatus and methods for biasing radio frequency (RF) switches are provided herein. In certain configurations, an RF switching circuit includes a field effect transistor (FET) switch electrically connected between a first terminal and a second terminal, and an adaptive biasing circuit that generates a bias voltage used in part to bias a gate of the FET switch. The adaptive biasing circuit includes a low pass filter that generates a low pass filtered voltage based on low pass filtering a voltage of the first terminal, a buffer circuit that receives the low pass filtered voltage and generates a buffered voltage, and a voltage shifting circuit that generates the bias voltage by shifting the buffered voltage by an amount of voltage that depends on a state of a switch control signal.