Abstract: A w-shaped diffused stripe GaAs/AlGaAs laser and a method for making the e. A double heterostructure layered structure includes a p-type GaAs active layer in contact with a p-type AlGaAs current blocking layer. These layers are sandwiched between two N-type AlGaAs confinement layers. A p-type zinc diffused stripe region having a w-shaped diffusion front extends longitudinally between two reflective surfaces located on respective ends of the device and extends vertically from the surface of the upper confinement layer through a portion of the lower confinement layer and through portions of the various intervening layers. In a method of forming the device, the various layers are formed by epitaxial growth or by metalorganic chemical vapor deposition. The stripe region is formed by diffusing zinc into the device from a source through a pair of parallel slots in a diffusion mask. The zinc diffused into the device is further driven-in by heating the device in the absence of the zinc source.

Abstract: A zinc-diffused narrow stripe AlGaAs/GaAs double heterostructure laser device and a method of making the same. A double heterostructure layered structure including a p-type GaAs active layer sandwiched between two n-type AlGaAs confinement layers is formed on a substrate. A p-type zinc diffused stripe region having a U-shaped diffusion front extends longitudinally between two reflective surfaces located on respective ends of the device and extends vertically from the surface of the upper confinement layer down to at least the surface of intersection between the active layer and the lower confinement layer. In a method of forming the device, the various layers are formed by epitaxial growth or by metalorganic chemical vapor deposition. The stripe region is formed by diffusing zinc from a source through a slot in a diffusion mask. The zinc diffused into the device is driven in by heating the device in the absence of the zinc source.