Patents by Inventor Päivikki REPO

Päivikki REPO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structures and manufacturing the same
    Patent number: 10950737
    Abstract: A layered semiconductor structure with a width in a lateral direction, having an operating area covering part of the width of the semiconductor structure, comprises a semiconductor substrate with majority charge carriers of a first polarity; and a first dielectric layer with inducing net charge of the first polarity on the semiconductor substrate. An induced junction is induced in the semiconductor substrate by an electric field generated in the semiconductor substrate by the inducing net charge. The semiconductor structure is configured to confine the electric field generated in the semiconductor substrate in the operating area.
    Type: Grant
    Filed: February 13, 2018
    Date of Patent: March 16, 2021
    Assignee: ELFYS OY
    Inventors: Mikko Juntunen, Hele Savin, Ville Vähänissi, Päivikki Repo, Juha Heinonen
  • SEMICONDUCTOR STRUCTURES AND MANUFACTURING THE SAME
    Publication number: 20190386157
    Abstract: A layered semiconductor structure with a width in a lateral direction, having an operating area covering part of the width of the semiconductor structure, comprises a semiconductor substrate with majority charge carriers of a first polarity; and a first dielectric layer with inducing net charge of the first polarity on the semiconductor substrate. An induced junction is induced in the semiconductor substrate by an electric field generated in the semiconductor substrate by the inducing net charge. The semiconductor structure is configured to confine the electric field generated in the semiconductor substrate in the operating area.
    Type: Application
    Filed: February 13, 2018
    Publication date: December 19, 2019
    Applicant: ELFYS OY
    Inventors: Mikko JUNTUNEN, Hele SAVIN, Ville VÄHÄNISSI, Päivikki REPO, Juha HEINONEN
  • Photodetector structures and manufacturing the same
    Patent number: 9882070
    Abstract: A photodetector structure comprises a semiconductor substrate extending substantially along a horizontal plane and having a bulk refractive index and a front surface defining a front side of the photodetector structure. The front surface comprises high aspect ratio nanostructures forming an optical conversion layer having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on the photodetector structure from the front side thereof. Further, the semiconductor substrate comprises an induced junction.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: January 30, 2018
    Assignee: AALTO UNIVERSITY FOUNDATION
    Inventors: Mikko Juntunen, Hele Savin, Päivikki Repo, Ville Vähänissi, Antti Haarahiltunen
  • PHOTODETECTOR STRUCTURES AND MANUFACTURING THE SAME
    Publication number: 20170358694
    Abstract: A photodetector structure comprises a semiconductor substrate extending substantially along a horizontal plane and having a bulk refractive index and a front surface defining a front side of the photodetector structure. The front surface comprises high aspect ratio nanostructures forming an optical conversion layer having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on the photodetector structure from the front side thereof. Further, the semiconductor substrate comprises an induced junction.
    Type: Application
    Filed: June 10, 2016
    Publication date: December 14, 2017
    Applicant: Aalto University Foundation
    Inventors: Mikko JUNTUNEN, Hele SAVIN, Päivikki REPO, Ville VÄHÄNISSI, Antti HAARAHILTUNEN