Abstract: Phonon engineered, lanthanide doped upconverting nanoparticles with very low phonon energies and tunable methods of synthesis that adjust OA:OM ratio and reaction temperature are provided. Low phonon energy KPb2X5 (X=Cl, Br) upconverting nanoparticles, both doped and undoped, exhibit dramatically suppressed multiphonon relaxation, enhancing upconversion emission from higher lanthanide excited states and enabling room temperature observation of avalanche like upconversion by Nd3+ ions. Intrinsic optical bistability (IOB) of the materials can provide bit level functionality to all optical computing. The IOB of Nd3+ doped nanocrystals, which are either bright or dark at the same excitation power based on power history, illustrate the functionality. High contrast switching and IOB are enabled via the photon avalanche process, which sustains population inversion between the ground and the first excited 4fN states of Nd3+ ions.

Abstract: Exemplary nanoparticle and method for inducing photon avalanching using a nanoparticle can be provided. The nanoparticle can include, for example, at least 99% thulium doped nanocrystals of the nanoparticle. The nanoparticle can be composed of solely thulium. An atomic concentration of the thulium can be at least 8%. A near infrared excitation wavelength of the nanocrystals can be greater than about 1064 nm. The near infrared excitation wavelength can be between about 1400 nm to about 1490 nm. A passivated shell(s) can be included which can surround the nanocrystals.

Abstract: Exemplary method and configuration for a frequency conversion can be provided. For example, such method and configuration can use at least one transition metal dichalcogenide (TDM) crystal (which can include one or more MoS2 crystals, which can be stacked). For example, it is possible to providing at least one radiation to the at least one TDM crystal so as to generate a resultant radiation. Resultant information can be generated by measuring difference frequency and a second harmonic generation (SHG) from the resultant radiation provided from the TDM crystal. The frequency conversion can be obtained or achieved by providing a measurement of a SHG coherence length based on the resultant information.

Abstract: Exemplary nanoparticle and method for inducing photon avalanching using a nanoparticle can be provided. The nanoparticle can include, for example, at least 99% thulium doped nanocrystals of the nanoparticle. The nanoparticle can be composed of solely thulium. An atomic concentration of the thulium can be at least 8%. A near infrared excitation wavelength of the nanocrystals can be greater than about 1064 nm. The near infrared excitation wavelength can be between about 1400 nm to about 1490 nm. A passivated shell(s) can be included which can surround the nanocrystals.

Abstract: Certain nanocrystals possess exceptional optical properties that may make them valuable probes for biological imaging, but rendering these nanoparticles biocompatible requires that they be small enough not to perturb cellular systems. This invention describes a phosphorescent upconverting sub-10 nm nanoparticle comprising a lanthanide-doped hexagonal ?-phase NaYF4 nanocrystal and methods for making the same.

Abstract: Certain nanocrystals possess exceptional optical properties that may make them valuable probes for biological imaging, but rendering these nanoparticles biocompatible requires that they be small enough not to perturb cellular systems. This invention describes a phosphorescent upconverting sub-10 nm nanoparticle comprising a lanthanide-doped hexagonal ?-phase NaYF4 nanocrystal and methods for making the same.

Abstract: The present invention provides a plasmonic optical transformer to produce a highly focuses optical beam spot, where the transformer includes a first metal layer, a dielectric layer formed on the first metal layer, and a second metal layer formed on the dielectric layer, where the first metal layer, the dielectric layer, and the second layer are patterned to a shape including a first section having a first cross section, a second section following the first section having a cross-section tapering from the first section to a smaller cross-section, and a third section following the second section having a cross-section matching the tapered smaller cross-section of the second section.

Abstract: A novel approach to dry development of exposed photo resist is described in which a photo resist layer is exposed to a visible light source in order to remove the resist in the areas of exposure. The class of compounds used as the resist material, under the influence of the light source, undergoes a chemical/structural change such that the modified material becomes volatile and is thus removed from the resist surface. The exposure process is carried out for a time sufficient to ablate the exposed resist layer down to the layer below. A group of compounds found to be useful in this process includes aromatic calixarenes.

Abstract: The present invention provides a plasmonic optical transformer to produce a highly focuses optical beam spot, where the transformer includes a first metal layer, a dielectric layer formed on the first metal layer, and a second metal layer formed on the dielectric layer, where the first metal layer, the dielectric layer, and the second layer are patterned to a shape including a first section having a first cross section, a second section following the first section having a cross-section tapering from the first section to a smaller cross-section, and a third section following the second section having a cross-section matching the tapered smaller cross-section of the second section,

Abstract: A novel approach to dry development of exposed photo resist is described in which a photo resist layer is exposed to a visible light source in order to remove the resist in the areas of exposure. The class of compounds used as the resist material, under the influence of the light source, undergoes a chemical/structural change such that the modified material becomes volatile and is thus removed from the resist surface. The exposure process is carried out for a time sufficient to ablate the exposed resist layer down to the layer below. A group of compounds found to be useful in this process includes aromatic calixarenes.