Abstract: Methods for reticle enhancement technology include representing a target wafer pattern or a predicted wafer pattern as a smooth function captured as a function sample array (FSA). The FSA is an array of sampled values of the smooth function, which is a continuous differentiable function. Methods also include providing a continuous tone mask (CTM), wherein the CTM is used to produce the predicted wafer pattern, the predicted wafer pattern spanning an entire design area.

Abstract: Methods for fracturing a pattern to be exposed on a surface using variable shaped beam (VSB) lithography include inputting an initial pattern; calculating a first substrate pattern from the initial pattern; overlaying the initial pattern with a two-dimensional grid, wherein an initial set of VSB shots are formed by a union of the initial pattern with locations on the grid; and merging two or more adjacent shots in the initial set of VSB shots to create a larger shot in a modified set of VSB shots; and outputting the modified set of VSB shots. The method also includes calculating a calculated pattern to be exposed on the surface with the modified set of VSB shots; and calculating a second substrate pattern from the calculated pattern to be exposed on the surface.

Abstract: Methods and systems for reticle enhancement technology (RET) include inputting a target wafer pattern, where the target wafer pattern spans an entire design area. The entire design area is divided into a plurality of tiles, each tile having a halo region surrounding the tile. An optimized mask is calculated, wherein the optimized mask is generated by a first trained neural network using the target wafer patter. The calculating is performed for each tile in the plurality of tiles including its halo region.

Abstract: Methods for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography include inputting a desired pattern to be formed on a substrate; determining an initial mask pattern from the desired pattern for the substrate; optimizing the initial mask pattern for wafer quality using a VSB exposure system; and outputting the optimized mask pattern. Methods for fracturing a pattern to be exposed on a surface using VSB lithography include inputting an initial pattern; overlaying the initial pattern with a two-dimensional grid, wherein an initial set of VSB shots are formed by the union of the initial pattern with locations on the grid; merging two or more adjacent shots in the initial set of VSB shots to create a larger shot in a modified set of VSB shots; and outputting the modified set of VSB shots.

Abstract: Methods for fracturing a pattern to be exposed on a surface using variable shaped beam (VSB) lithography include inputting an initial pattern; calculating a first substrate pattern from the initial pattern; overlaying the initial pattern with a two-dimensional grid, wherein an initial set of VSB shots are formed by a union of the initial pattern with locations on the grid; and merging two or more adjacent shots in the initial set of VSB shots to create a larger shot in a modified set of VSB shots; and outputting the modified set of VSB shots. The method also includes calculating a calculated pattern to be exposed on the surface with the modified set of VSB shots; and calculating a second substrate pattern from the calculated pattern to be exposed on the surface.

Abstract: Methods for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography include determining an initial mask pattern from a desired pattern for a substrate; calculating a first substrate pattern from the initial mask pattern; determining an initial set of VSB shots that will form the initial mask pattern; calculating a simulated mask pattern from the initial set of VSB shots; calculating a second substrate pattern from the simulated mask pattern; and adjusting the initial set of VSB shots, wherein the adjusting of the initial set of VSB shots creates an adjusted set of VSB shots.

Abstract: Methods for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography include inputting a desired pattern to be formed on a substrate; determining an initial mask pattern from the desired pattern for the substrate; optimizing the initial mask pattern for wafer quality using a VSB exposure system; and outputting the optimized mask pattern. Methods for fracturing a pattern to be exposed on a surface using VSB lithography include inputting an initial pattern; overlaying the initial pattern with a two-dimensional grid, wherein an initial set of VSB shots are formed by the union of the initial pattern with locations on the grid; merging two or more adjacent shots in the initial set of VSB shots to create a larger shot in a modified set of VSB shots; and outputting the modified set of VSB shots.

Abstract: Methods for reticle enhancement technology include representing a target wafer pattern or a predicted wafer pattern as a smooth function captured as a function sample array (FSA). The FSA is an array of sampled values of the smooth function, which is a continuous differentiable function. Methods also include providing a continuous tone mask (CTM), wherein the CTM is used to produce the predicted wafer pattern, the predicted wafer pattern spanning an entire design area.

Abstract: Methods for iteratively optimizing a two-dimensioned tiled area such as a lithographic mask include determining a halo area around each tile in the tiled area. An extended tile is made of a tile and a halo area. Each extended tile in the tiled area is iterated until a criterion is satisfied or a maximum number of iterations is met. Optimizing the extended tile produces a pattern for the tile such that at a perimeter of the tile, the pattern matches adjacent patterns that are calculated at perimeters of adjacent tiles.

Abstract: Methods for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography include inputting a desired pattern to be formed on a substrate; determining an initial mask pattern from the desired pattern for the substrate; optimizing the initial mask pattern for wafer quality using a VSB exposure system; and outputting the optimized mask pattern. Methods for fracturing a pattern to be exposed on a surface using VSB lithography include inputting an initial pattern; overlaying the initial pattern with a two-dimensional grid, wherein an initial set of VSB shots are formed by the union of the initial pattern with locations on the grid; merging two or more adjacent shots in the initial set of VSB shots to create a larger shot in a modified set of VSB shots; and outputting the modified set of VSB shots.

Abstract: Methods for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography include inputting a desired pattern to be formed on a substrate; determining an initial mask pattern from the desired pattern for the substrate; optimizing the initial mask pattern for wafer quality using a VSB exposure system; and outputting the optimized mask pattern. Methods for fracturing a pattern to be exposed on a surface using VSB lithography include inputting an initial pattern; overlaying the initial pattern with a two-dimensional grid, wherein an initial set of VSB shots are formed by the union of the initial pattern with locations on the grid; merging two or more adjacent shots in the initial set of VSB shots to create a larger shot in a modified set of VSB shots; and outputting the modified set of VSB shots.

Abstract: Methods for iteratively optimizing a two-dimensioned tiled area such as a lithographic mask include determining a halo area around each tile in the tiled area. An extended tile is made of a tile and a halo area. Each extended tile in the tiled area is iterated until a criterion is satisfied or a maximum number of iterations is met. Optimizing the extended tile produces a pattern for the tile such that at a perimeter of the tile, the pattern matches adjacent patterns that are calculated at perimeters of adjacent tiles.

Abstract: Methods for iteratively optimizing a two-dimensioned tiled area such as a lithographic mask include determining a halo area around each tile in the tiled area. An extended tile is made of a tile and a halo area. Each extended tile in the tiled area is iterated until a criterion is satisfied or a maximum number of iterations is met. Optimizing the extended tile produces a pattern for the tile such that at a perimeter of the tile, the pattern matches adjacent patterns that are calculated at perimeters of adjacent tiles.

Abstract: Methods for iteratively optimizing a two-dimensioned tiled area such as a lithographic mask include determining a halo area around each tile in the tiled area. An extended tile is made of a tile and a halo area. Each extended tile in the tiled area is iterated until a criterion is satisfied or a maximum number of iterations is met. Optimizing the extended tile produces a pattern for the tile such that at a perimeter of the tile, the pattern matches adjacent patterns that are calculated at perimeters of adjacent tiles.

Abstract: Methods for reticle enhancement technology (RET) include inputting a target wafer pattern, where the target wafer pattern spans an entire design area. The entire design area is divided into a plurality of tiles, each tile having a halo region surrounding the tile. A proposed mask for the entire design area is iterated until the proposed mask meets criteria towards producing the target wafer pattern. Each iteration includes calculating a predicted wafer pattern for a subset of the plurality of tiles; and updating the proposed mask for that tile; where all tiles in the subset are calculated before the next iteration.

Abstract: Methods for reticle enhancement technology (RET) include inputting a target wafer pattern, where the target wafer pattern spans an entire design area. The entire design area is divided into a plurality of tiles, each tile having a halo region surrounding the tile. A proposed mask for the entire design area is iterated until the proposed mask meets criteria towards producing the target wafer pattern. Each iteration includes calculating a predicted wafer pattern for a subset of the plurality of tiles; and updating the proposed mask for that tile; where all tiles in the subset are calculated before the next iteration.

Abstract: Methods for reticle enhancement technology (RET) include representing a target wafer pattern or a predicted wafer pattern as a smooth function captured as a function sample array, which is an array of function values. A continuous tone mask (CTM) is provided, where the CTM is used to produce the predicted wafer pattern. Methods for RET also include inputting a target wafer pattern, where the target wafer pattern spans an entire design area. The entire design area is divided into a plurality of tiles, each tile having a halo region surrounding the tile. A proposed mask for the entire design area is iterated until the proposed mask meets criteria towards producing the target wafer pattern. Each iteration includes calculating a predicted wafer pattern for a subset of the plurality of tiles; and updating the proposed mask for that tile; where all tiles in the subset are calculated before the next iteration.

Abstract: A system for tracking the capacity of a battery in a portable electronic device is described. While the portable electronic device remains plugged in to a power adapter, the system estimates the capacity of the battery by performing the following operations. The system measures a first open-circuit voltage for the battery while the battery rests at a first state of charge. Next, the system causes the battery to transition to a second state of charge. While the battery transitions to the second state of charge, the system integrates a current through the battery to determine a net change in charge for the battery. Next, the system measures a second open-circuit voltage for the battery while the battery rests at the second state of charge. Finally, the system estimates a capacity for the battery based on the first open-circuit voltage, the second open-circuit voltage and the net change in charge. This capacity measurement is repeated and the multiple results are fit to a line.

Abstract: Methods for reticle enhancement technology (RET) include representing a target wafer pattern or a predicted wafer pattern as a smooth function captured as a function sample array, which is an array of function values. A continuous tone mask (CTM) is provided, where the CTM is used to produce the predicted wafer pattern. Methods for RET also include inputting a target wafer pattern, where the target wafer pattern spans an entire design area. The entire design area is divided into a plurality of tiles, each tile having a halo region surrounding the tile. A proposed mask for the entire design area is iterated until the proposed mask meets criteria towards producing the target wafer pattern. Each iteration includes calculating a predicted wafer pattern for a subset of the plurality of tiles; and updating the proposed mask for that tile; where all tiles in the subset are calculated before the next iteration.

Abstract: Some embodiments of the present invention provide a system that adaptively charges a battery, wherein the battery is a lithium-ion battery which includes a transport-limiting electrode governed by diffusion, an electrolyte separator and a non-transport-limiting electrode. During operation, the system determines a lithium surface concentration at an interface between the transport-limiting electrode and the electrolyte separator based on a diffusion time for lithium in the transport-limiting electrode. Next, the system calculates a charging current or a charging voltage for the battery based on the determined lithium surface concentration. Finally, the system applies the charging current or the charging voltage to the battery.