Patents by Inventor P. Pattison

P. Pattison has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070096127
    Abstract: A spontaneously light emitting nitride-based active region placed within a micro-cavity bounded by a first mirror and a second mirror, wherein the micro-cavity has been thinned to a resonant thickness within a micro-cavity regime.
    Type: Application
    Filed: August 25, 2006
    Publication date: May 3, 2007
    Inventors: P. Pattison, Rajat Sharma, Steven DenBaars, Shuji Nakamura
  • Publication number: 20070093073
    Abstract: A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.
    Type: Application
    Filed: June 1, 2006
    Publication date: April 26, 2007
    Inventors: Robert Farrell, Troy Baker, Arpan Chakraborty, Benjamin Haskell, P. Pattison, Rajat Sharma, Umesh Mishra, Steven DenBaars, James Speck, Shuji Nakamura
  • Publication number: 20060246722
    Abstract: An etching technique for the fabrication of thin (Al, In, Ga)N layers. A suitable template or substrate is selected and implanted with foreign ions over a desired area to create ion implanted material. A regrowth of a device structure is then performed on the implanted template or substrate. The top growth surface of the template is bonded to a carrier wafer to created a bonded template/carrier wafer structure. The substrate is removed, as is any residual material, to expose the ion implanted material. The ion implanted material on the bonded template/carrier wafer structure is then exposed to a suitable etchant for a sufficient time to remove the ion implanted material.
    Type: Application
    Filed: April 13, 2006
    Publication date: November 2, 2006
    Inventors: James Speck, Benjamin Haskell, P. Pattison, Troy Baker
  • Patent number: 6095729
    Abstract: Tool extension and stability in milling machines is enhanced by providing a spindle extension having a housing attached to the mill head and an arbor rotatively mounted in a bore formed in the housing. The arbor, which is significantly longer than conventional arbors, is supported by first and second bearing assemblies and includes a substantially cylindrical body portion with an integral shank formed on one end thereof for connecting the arbor to a machine tool spindle. A cutting tool is attached to the other end of the arbor.
    Type: Grant
    Filed: December 9, 1998
    Date of Patent: August 1, 2000
    Assignee: General Electric Company
    Inventors: James P. Pattison, Sukhminder S. Grewal, Douglas R. Smith