Patents by Inventor P. Rao

P. Rao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12249372
    Abstract: A state may be encoded into a memory cell comprising a phase change material (PM) region and a select device (SD) region by: applying a first current in the memory cell over a first time period, wherein the first current applied over the first time period causes the PM region of the memory cell to be placed into an amorphous state and the SD region of the memory cell to be placed into an amorphous state; and applying a second current in the memory cell over a second time period after the first time period, wherein the second current applied over the third time period causes the SD region of the memory cell to be placed into a crystalline state and the PM region of the memory cell to remain in the amorphous state.
    Type: Grant
    Filed: August 20, 2021
    Date of Patent: March 11, 2025
    Assignee: Intel Corporation
    Inventors: Rouhollah Mousavi Iraei, Kiran Pangal, Saad P. Monasa, Mini Goel, Raymond Zeng, Hemant P. Rao
  • Patent number: 12230346
    Abstract: A read technique for both SLC (single level cell) and MLC (multi-level cell) cross-point memory can mitigate drift-related errors with minimal or no drift tracking. In one example, a read at a higher magnitude voltage is applied first, which causes the drift for cells in a lower threshold voltage state to be reset. In one example, the read at the first voltage can be a full float read to minimize disturb. A second read can then be performed at a lower voltage without the need to adjust the read voltage due to drift.
    Type: Grant
    Filed: June 25, 2021
    Date of Patent: February 18, 2025
    Assignee: Intel Corporation
    Inventors: Hemant P. Rao, Raymond W. Zeng, Prashant S. Damle, Zion S. Kwok, Kiran Pangal, Mase J. Taub
  • Patent number: 12119057
    Abstract: In one embodiment, a state is reach from a memory cell comprising a phase change material (PM) region and a select device (SD) region by: ramping a voltage applied to a first address line of an address line pair corresponding to the memory cell until the first address line voltage is stabilized at a predetermined voltage, ramping a voltage applied to a second address line of the address line pair corresponding to the memory cell, detecting a snap in the memory cell while ramping the voltage applied to the second address line, and determining a state of the memory cell based on a differential voltage between the first and second address lines when the memory cell snap occurred.
    Type: Grant
    Filed: December 2, 2021
    Date of Patent: October 15, 2024
    Assignee: Intel Corporation
    Inventors: Rouhollah Mousavi Iraei, Mini Goel, Raymond Zeng, Hemant P. Rao
  • Publication number: 20240161132
    Abstract: Aspects of the present disclosure involve systems, methods, devices, and the like for augmented media intelligence using Artificial Intelligence (AI), Machine Learning (ML), Natural Language Processing (NLP), data analytics and data visualization. In one embodiment, a system is introduced that can retrieve real-time data from social media platforms to perform augmented media intelligence analysis and take real time actions if necessary. In another embodiment, the augmented media intelligence is design to use the machine learning and natural language processing capabilities and social currency means for understanding an influencers reach within the augmented media intelligence system via an influencer score.
    Type: Application
    Filed: November 14, 2023
    Publication date: May 16, 2024
    Inventors: Anita P. Rao, Babji Nagireddi, Srujan Jha, Rajkumar Perumal, Lenin Kumar Babu Pothabattula
  • Patent number: 11913136
    Abstract: In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.
    Type: Grant
    Filed: January 5, 2023
    Date of Patent: February 27, 2024
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert T. Bondokov, Jianfeng Chen, Keisuke Yamaoka, Shichao Wang, Shailaja P. Rao, Takashi Suzuki, Leo J. Schowalter
  • Publication number: 20240058382
    Abstract: Intracellular delivery of a genetic construct to immune cells including: obtaining a deterministic mechanoporation (DMP) platform that includes a substrate having a surface and a plurality of capture sites, each said capture site having a boundary shape at the surface adapted and configured to support thereon a cell, and each said capture site having a bottom and including a sub-micron-scale projection extending from the bottom toward the surface of the substrate, wherein said projection is adapted and configured to penetrate a cell membrane and/or wall of the cell, and wherein the substrate has a plurality of aspiration vias situated at the bottom of the capture sites; introducing the cells to the surface in a liquid media; capturing the cells within the capture sites by applying a first hydrodynamic force; applying a second hydrodynamic force on the captured cell and locally rupturing the membrane and/or wall of the cell with the projection, introducing the genetic construct into the cells, and releasing th
    Type: Application
    Filed: October 30, 2023
    Publication date: February 22, 2024
    Inventors: Masaru P. Rao, Harish G. Dixit, Hideaki Tsutsui, Morgan L. Dundon, Pranee I. Pairs, Stephen J. Forman, Christine E. Brown, Renate Starr, Christopher B. Ballas
  • Patent number: 11861630
    Abstract: Aspects of the present disclosure involve systems, methods, devices, and the like for augmented media intelligence using Artificial Intelligence (AI), Machine Learning (ML), Natural Language Processing (NLP), data analytics and data visualization. In one embodiment, a system is introduced that can retrieve real-time data from social media platforms to perform augmented media intelligence analysis and take real time actions if necessary. In another embodiment, the augmented media intelligence is design to use the machine learning and natural language processing capabilities and social currency means for understanding an influencers reach within the augmented media intelligence system via an influencer score.
    Type: Grant
    Filed: May 31, 2022
    Date of Patent: January 2, 2024
    Assignee: PAYPAL, INC.
    Inventors: Anita P. Rao, Babji Nagireddi, Srujan Jha, Rajkumar Perumal, Lenin Kumar Babu Pothabattula
  • Patent number: 11828002
    Abstract: In various embodiments, single-crystal aluminum nitride boules and substrates having high transparency to ultraviolet light and low defect density are formed. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
    Type: Grant
    Filed: February 22, 2021
    Date of Patent: November 28, 2023
    Assignee: Crystal IS, Inc.
    Inventors: Robert T. Bondokov, Jianfeng Chen, Keisuke Yamaoka, Shichao Wang, Shailaja P. Rao, Takashi Suzuki, Leo J. Schowalter
  • Publication number: 20230371408
    Abstract: Memory devices having optimized phase change memory (PCM) structures to improve nucleation time variation and methods for forming the phase change memory structures. The PCM structures are composed of layers including a first electrode layer, a PCM layer having a first interface with the first electrode layer comprising a first electrode/PCM interface, and a second electrode layer, having a second interface with the phase change material layer comprising a PCM/second electrode interface. The first electrode/PCM interface and the PCM/second electrode interface are non-flat and configured to reduce statistical variation of nucleation time. Techniques/processes for forming these interfaces include creating serrated or rough edges, forming patterned shapes, and attaching nanodots.
    Type: Application
    Filed: May 13, 2022
    Publication date: November 16, 2023
    Inventors: Lu LIU, Hemant P. RAO, Kumar R. VIRWANI
  • Patent number: 11810617
    Abstract: Examples may include techniques to implement a SET write operation to a selected memory cell include in a memory array. Examples include selecting the memory cell that includes phase change material and applying various currents over various periods of time during a nucleation stage and a crystal growth stage to cause the memory cell to be in a SET logical state.
    Type: Grant
    Filed: February 11, 2022
    Date of Patent: November 7, 2023
    Assignee: Intel Corporation
    Inventors: Hemant P. Rao, Shylesh Umapathy, Sanjay Rangan
  • Publication number: 20230267988
    Abstract: A method, apparatus and system. The apparatus includes one or more processors to: determine that a memory operation including one of a write operation or a read operation is to be implemented on a memory cell of a memory array, the memory operation having a duration equal to a latency window and being based on a voltage change across the memory cell equal to a target memory window; and in response to a determination that the memory operation is to be implemented, cause, during the latency window, an application to the memory cell of a current pulse amplitude profile progressively decreasing between and including at least four current pulse amplitudes.
    Type: Application
    Filed: February 24, 2022
    Publication date: August 24, 2023
    Applicant: Intel Corporation
    Inventors: Lu Liu, Hemant P. Rao, Phoebe P. Yeoh, Raymond Zeng
  • Publication number: 20230260573
    Abstract: A memory device comprising a plurality of memory cells, a memory cell of the plurality of memory cells comprising a phase change material (PM) region and a select device (SD) region in series with the PM region; a first address line and a second address line coupled to the memory cell; and memory controller circuitry to interface with the first address line and the second address line, the memory controller circuitry to encode a state in the memory cell by applying, through the first address line and second address line, a current spike and a programming pulse to the memory cell to cause the PM region to be placed into an amorphous state and the SD region of the memory cell to be placed into a high threshold voltage state.
    Type: Application
    Filed: February 14, 2022
    Publication date: August 17, 2023
    Applicant: Intel Corporation
    Inventors: Rouhollah Mousavi Iraei, Mini Goel, Hemant P. Rao, Raymond Zeng
  • Publication number: 20230239558
    Abstract: A portable electronic device may include an enclosure including a front cover defining a front exterior surface of the portable electronic device and a rear cover defining a rear exterior surface of the portable electronic device. The portable electronic device may further include a rear-facing camera and a rear-facing flash including a light emitting component defining a plurality of illuminable regions. The light emitting component may be configured to illuminate a first subset of the plurality of illuminable regions to illuminate a first field of view and illuminate a second subset of the plurality of illuminable regions, the second subset different from the first subset, to illuminate a second field of view different from the first field of view.
    Type: Application
    Filed: September 6, 2022
    Publication date: July 27, 2023
    Inventors: Matthew D. Hill, Michael W. Firka, Nicholas D. Rath, Douglas G. Fournier, Matthew P. Rao, Benjamin J. Pope, James A. Bertin, David A. Hurrell, Jonathan Gomez Garcia, Blake M. Coughenour, Angelo M. Alaimo, Jeremy D. Bataillou
  • Publication number: 20230178148
    Abstract: In one embodiment, a state is reach from a memory cell comprising a phase change material (PM) region and a select device (SD) region by: ramping a voltage applied to a first address line of an address line pair corresponding to the memory cell until the first address line voltage is stabilized at a predetermined voltage, ramping a voltage applied to a second address line of the address line pair corresponding to the memory cell, detecting a snap in the memory cell while ramping the voltage applied to the second address line, and determining a state of the memory cell based on a differential voltage between the first and second address lines when the memory cell snap occurred.
    Type: Application
    Filed: December 2, 2021
    Publication date: June 8, 2023
    Applicant: Intel Corporation
    Inventors: Rouhollah Mousavi Iraei, Mini Goel, Raymond Zeng, Hemant P. Rao
  • Patent number: 11670525
    Abstract: Methods and apparatus for reducing leakage of microwaves at a slit valve of a process chamber. A multi-frequency resonant choke around the slit valve prevents microwave energy from a band of frequencies from escaping from the slit valve. The multi-frequency resonant choke may have a sloping bottom surface or a serrated bottom surface to enable multiple frequencies to resonant in the choke, canceling a range of microwave frequencies at gaps formed by a slit valve gate.
    Type: Grant
    Filed: March 25, 2019
    Date of Patent: June 6, 2023
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Preetham P. Rao, Ananthkrishna Jupudi, Ribhu Gautam
  • Publication number: 20230167584
    Abstract: In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.
    Type: Application
    Filed: January 5, 2023
    Publication date: June 1, 2023
    Inventors: Robert T. BONDOKOV, Jianfeng CHEN, Keisuke YAMAOKA, Shichao WANG, Shailaja P. RAO, Takashi SUZUKI, Leo J. SCHOWALTER
  • Publication number: 20230171089
    Abstract: A computer-implemented method for providing a secure data access service that encrypts data is disclosed. The method includes: wrapping a data encryption key by at least two customer root keys, wherein the at least two customer root keys are assigned to different user identifiers, and wherein the at least two customer root keys are stored in different hardware security modules, and wherein a wrapping structure for the at least two customer root keys is applied according to an access policy that defines which of the assigned user identifiers must concur to enable a data access to the encrypted data by the secure data access service; and encrypting the data by the secure data access service using the unwrapped data encryption key.
    Type: Application
    Filed: November 29, 2021
    Publication date: June 1, 2023
    Inventors: Dwarkanath P. RAO, Utz BACHER
  • Patent number: 11662472
    Abstract: Systems and methods for integrity monitoring of odometry measurements within a navigation system are provided herein. In certain embodiments, a system includes imaging sensors that generate image frames from optical inputs. The system also includes a GNSS receiver that provides pseudorange measurements; and computational devices that receive the image frames and the pseudorange measurements. Further, the computational devices compute odometry information from image frames acquired at different times; and calculate a full solution for the system based on the pseudorange measurements and the odometry information. Additionally, the computational devices calculate sub-solutions for the system based on subsets of the pseudorange measurements and the odometry information, wherein one of the sub-solutions is not based on the odometry information.
    Type: Grant
    Filed: January 22, 2021
    Date of Patent: May 30, 2023
    Assignee: Honeywell International Inc.
    Inventors: Vibhor L Bageshwar, Shrikant P. Rao, Vijay Venkataraman
  • Patent number: 11637919
    Abstract: A portable electronic device includes a housing member defining a first portion of an exterior front surface of the portable electronic device, a first portion of an exterior rear surface of the portable electronic device, at least a portion of an exterior side surface of the portable electronic device, a recess along an interior side of the housing member, and a ledge feature along the interior side of the housing member. The device also includes a top module coupled to the housing member and including a front cover defining a second portion of the exterior front surface of the portable electronic device, a display stack attached to the front cover, and a frame member extending at least partially around a periphery of the display stack and set apart from a surface of the recess by a gap.
    Type: Grant
    Filed: October 12, 2020
    Date of Patent: April 25, 2023
    Assignee: APPLE INC.
    Inventors: John J. Baker, Eric W. Bates, Lucy E. Browning, Kodiak Burke, Benjamin S. Bustle, Trent Canales, Tyler B. Cater, Sawyer I. Cohen, Richard Hung Minh Dinh, Michael Firka, Kevin M. Froese, Jun Sik Ham, Matthew D. Hill, Hugh J. Jay, Benjamin J. Kallman, Paul U. Leutheuser, Matthew W. Miller, Michael K. Mondry, Donald J. Parr, Benjamin J. Pope, Matthew P. Rao, Griffin Schmitt, Allegra Shum, Christopher R. Xydis, Luman Zhang, Yaocheng Zhang, Zhipeng Zhang, Xiao Ying Zhao
  • Patent number: 11629409
    Abstract: Methods and apparatus for a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes a chamber body having sidewalls defining an interior volume having a polygon shape; a selectively sealable elongated opening disposed in an upper portion of the chamber body for transferring one or more substrates into or out of the chamber body; a funnel disposed at a first end of the chamber body, wherein the funnel increases in size along a direction from an outer surface of the chamber body to the interior volume; and a pump port disposed at a second end of the chamber body opposite the funnel.
    Type: Grant
    Filed: May 28, 2019
    Date of Patent: April 18, 2023
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ribhu Gautam, Ananthkrishna Jupudi, Tuck Foong Koh, Preetham P. Rao, Vinodh Ramachandran, Yueh Sheng Ow, Yuichi Wada, Cheng-Hsiung Tsai, Kai Liang Liew