Patents by Inventor Pére Roca i Cabarrocas
Pére Roca i Cabarrocas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10763381Abstract: Disclosed is an opto-electronic device including a semiconducting substrate, a layered interface including at least one layer, the layered interface having a first surface in contact with a surface of the semiconducting substrate and the layered interface being adapted for passivating the surface of the semiconducting substrate, the layered interface having a second surface and the layered interface being adapted for electrically insulating the first surface from the second surface, and a textured surface structure including a plurality of nanowires and a transparent dielectric coating, the textured surface structure being in contact with the second surface of the layered interface, the plurality of nanowires protruding from the second surface and the plurality of nanowires being embedded between the second surface and the transparent dielectric coating.Type: GrantFiled: December 21, 2015Date of Patent: September 1, 2020Assignees: TOTAL S.A., ECOLE POLYTECHNIQUE, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUEInventors: Pere Roca I Cabarrocas, Wanghua Chen, Martin Foldyna, Gilles Poulain
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Publication number: 20180254170Abstract: Disclosed is a plasma generating apparatus, for manufacturing devices having patterned layers, including a first electrode assembly and a second electrode assembly placed in a plasma reactor chamber, an electrical power supply for generating a voltage difference between the first electrode assembly and the second electrode assembly. The first electrode assembly includes a plurality of protrusions and a plurality of recesses, the protrusions and recesses being dimensioned and set at respective distances from the surface of the substrate so as to generate a plurality of spatially isolated plasma zones located selectively either between the second electrode assembly and the plurality of recesses or between the second electrode assembly and the plurality of protrusions.Type: ApplicationFiled: August 30, 2016Publication date: September 6, 2018Inventors: Erik JOHNSON, Bastien BRUNEAU, Pere ROCA I CABARROCAS, Pavel BULKIN, Nada HABKA
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Patent number: 10002978Abstract: A photovoltaic module includes at least two photovoltaic cells in series, each rectangular cell including, respectively, a first rear thin film electrode, a photovoltaic stack having at least two active materials included between the rear electrode and a transparent conductive electrode made of a thin film, the electrode TC being capable of collecting and transmitting an electric current generated by the photovoltaic stack, the two photovoltaic cells being electrically connected in series by an electrical contact strip that is included between the electrode TC of the first cell and the rear electrode of the second cell. The local thickness of the electrode TC of the cell varies as a function of the distance to the electrical contact strip. Also described are methods for depositing and etching the transparent conductive film so as to simultaneously manufacture a plurality of cells for a single module.Type: GrantFiled: December 3, 2009Date of Patent: June 19, 2018Assignees: ECOLE POLYTECHNIQUE, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIC, TOTAL S.A.Inventors: Erik V. Johnson, Pere Roca I Cabarrocas
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Patent number: 9911892Abstract: A method for the low-temperature production of radial electronic junction semiconductor nanostructures on a substrate, includes: a) forming on the substrate, metal aggregates capable of electronically doping a first semiconductor material; b) growing, in the vapor phase, doped semiconductor nanowires in the presence of one or more non-dopant precursor gases of the first semiconductor material, the substrate being heated to a temperature at which the metal aggregates are in the liquid phase, the growth of the doped semiconductor nanowires in the vapor phase being catalyzed by the metal aggregates; c) rendering the residual metal aggregates inactive; and d) the chemical vapor deposition, in the presence of one or more precursor gases and a dopant gas, of at least one thin film of a second semiconductor material so as to form at least one radial electronic junction nanostructure between the nanowire and the at least one doped thin film.Type: GrantFiled: January 3, 2013Date of Patent: March 6, 2018Assignees: TOTAL S.A., CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, ECOLE POLYTECHNIQUEInventors: Linwei Yu, Pere Roca I Cabarrocas
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Publication number: 20180006164Abstract: Disclosed is an opto-electronic device including a semiconducting substrate, a layered interface including at least one layer, the layered interface having a first surface in contact with a surface of the semiconducting substrate and the layered interface being adapted for passivating the surface of the semiconducting substrate, the layered interface having a second surface and the layered interface being adapted for electrically insulating the first surface from the second surface, and a textured surface structure including a plurality of nanowires and a transparent dielectric coating, the textured surface structure being in contact with the second surface of the layered interface, the plurality of nanowires protruding from the second surface and the plurality of nanowires being embedded between the second surface and the transparent dielectric coating.Type: ApplicationFiled: December 21, 2015Publication date: January 4, 2018Inventors: Pere ROCA I CABARROCAS, Wanghua CHEN, Martin FOLDYNA, Gilles POULAIN
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Publication number: 20150000730Abstract: A method for the low-temperature production of radial electronic junction semiconductor nanostructures on a substrate, includes: a) forming on the substrate, metal aggregates capable of electronically doping a first semiconductor material; b) growing, in the vapor phase, doped semiconductor nanowires in the presence of one or more non-dopant precursor gases of the first semiconductor material, the substrate being heated to a temperature at which the metal aggregates are in the liquid phase, the growth of the doped semiconductor nanowires in the vapor phase being catalyzed by the metal aggregates; c) rendering the residual metal aggregates inactive; and d) the chemical vapor deposition, in the presence of one or more precursor gases and a dopant gas, of at least one thin film of a second semiconductor material so as to form at least one radial electronic junction nanostructure between the nanowire and the at least one doped thin film.Type: ApplicationFiled: January 3, 2013Publication date: January 1, 2015Applicants: TOTAL MARKETING SERVICES, ECOLE POLYTECHNIQUE, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUEInventors: Linwei Yu, Pere Roca I Cabarrocas
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Publication number: 20140338744Abstract: The invention relates to a process for texturing the surface of a silicon substrate, comprising a step of exposing said surface to an MDECR plasma generated, at least from argon, using between 1.5 W/cm2 and 6.5 W/cm2 of plasma power in a matrix distributed electron cyclotron resonance plasma source, the substrate bias being between 100 V and 300 V.Type: ApplicationFiled: December 20, 2012Publication date: November 20, 2014Inventors: Nada Habka, Pavel Bulkin, Pere Roca i Cabarrocas
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Patent number: 8859929Abstract: An apparatus is described for depositing a film on a substrate from a plasma. The apparatus comprises an enclosure, a plurality of plasma generator elements disposed within the enclosure, and means, also within the enclosure, for supporting the substrate. Each plasma generator element comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna, the outlet being located in, or above, the hot electron confinement envelope.Type: GrantFiled: October 26, 2007Date of Patent: October 14, 2014Assignees: Dow Corning Corporation, Ecole PolytechniqueInventors: Pere Roca I Cabarrocas, Pavel Bulkin, Dmitri Daineka, Patrick Leempoel, Pierre Descamps, Thibault Kervyn De Meerendre
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Patent number: 8652944Abstract: Fabricating semiconductor nanowires (5) on a substrate (1) having a metallic oxide layer (2), includes: a) exposing the metallic oxide layer to a hydrogen plasma (11) of power P for a duration t suitable for reducing the layer and for forming metallic nanodrops (3) of radius (Rm) on the surface of the metallic oxide layer; b) low temperature plasma-assisted deposition of a thin layer (4) of a semiconductor material on the metallic oxide layer including the metallic nanodrops, the thin layer having a thickness (Ha) suitable for covering the metallic nanodrops; and c) thermal annealing at a temperature T sufficient to activate lateral growth of nanowires by catalysis of the material deposited as a thin layer from the metallic nanodrops. Nanowires are obtained by this method and nanometric transistors including a semiconductor nanowire.Type: GrantFiled: October 9, 2009Date of Patent: February 18, 2014Assignees: Ecole Polytechnique, Centre National de la Recherche ScientifiqueInventors: Pere Roca I Cabarrocas, Linwei Yu
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Patent number: 8635972Abstract: A plasma excitation device is described for use in depositing a film on a substrate from a plasma formed by distributed electron cyclotron resonance. The device comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna.Type: GrantFiled: October 26, 2007Date of Patent: January 28, 2014Assignees: Ecole Polytechnique, Dow Corning CorporationInventors: Pere Roca I Cabarrocas, Pavel Bulkin, Dmitri Daineka, Patrick Leempoel, Pierre Descamps, Thibault Kervyn De Meerendre
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Patent number: 8592949Abstract: The invention relates to a method for texturing the surface of a gaseous phase silicon substrate, and to a textured silicon substrate for a solar cell. The method includes at least a step a) of exposing the surface to an SF6/O2 radiofrequency plasma for a duration of 2 to 30 minutes in order to produce a silicon substrate having a textured surface having pyramidal structures, the SF6/O2 ratio being 2 to 10. During step a) the power density generated using the radiofrequency plasma is greater than or equal to 2500 mW/cm2, and the SF6/O2 pressure in the reaction chamber is lower than or equal to 100 mTorrs, so as to produce a silicon substrate having a textured surface having inverted pyramidal structures.Type: GrantFiled: August 23, 2010Date of Patent: November 26, 2013Assignees: Ecole Polytechnique, Centre National de la Recherche ScientifiqueInventors: Pere Roca I Cabarrocas, Mario Moreno, Dimitri Daineka
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Patent number: 8470690Abstract: Method of fabricating a multilayer film having at least one ultrathin layer of crystalline silicon, the film being fabricated from a substrate having a crystalline structure and including a previously-cleaned surface. The method includes the steps of: a) exposing the cleaned surface to a radiofrequency plasma generated in a gaseous mixture of SiF4, hydrogen, and argon, so as to form an ultrathin layer of crystalline silicon having an interface sublayer in contact with the substrate and containing microcavities; b) depositing at least one layer of material on the ultrathin layer of crystalline silicon so as form a multilayer film, the multilayer film including at least one mechanically strong layer; and c) annealing the substrate covered in the multilayer film at a temperature higher than 400° C., thereby enabling the multilayer film to be separated from the substrate.Type: GrantFiled: October 15, 2010Date of Patent: June 25, 2013Assignees: Centre National de la Recherche Scientifique, Ecole PolytechniqueInventors: Pere Roca I Cabarrocas, Mario Moreno
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Patent number: 8421074Abstract: A Semiconductor device including, on at least one surface of a layer made of a crystalline semiconductor material of a certain type of conductivity, a layer made of an amorphous semiconductor material, doped with a type of conductivity opposite to the type of conductivity of the crystalline semiconductor material layer, characterized in that the concentration of the doping elements in the amorphous semiconductor layer varies gradually.Type: GrantFiled: January 31, 2011Date of Patent: April 16, 2013Assignees: Centre National de la Recherche Scientifique (CNRS), Ecole PolytechniqueInventors: Pere Roca I. Cabarrocas, Jerome Damon-Lacoste
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Patent number: 8404052Abstract: A method for cleaning the surface of a silicon substrate, covered by a layer of silicon oxide includes: a) exposing the surface for 60 to 900 seconds to a radiofrequency plasma, generated from a fluorinated gas, to strip the silicon oxide layer and induce the adsorption of fluorinated elements on the substrate surface, the power density generated using the plasma being 10 mW/cm2 to 350 mW/cm2, the fluorinated gas pressure being 10 mTorrs to 200 mTorrs, and the substrate temperature being lower than or equal to 300° C.; and b) exposing the surface including the fluorinated elements for 5 to 120 seconds to a hydrogen radiofrequency plasma, to remove the fluorinated elements from the substrate surface, the power density generated using the plasma being 10 mW/cm2 to 350 mW/cm2, the hydrogen pressure being 10 mTorrs to 1 Torr, and the substrate temperature being lower than or equal to 300° C.Type: GrantFiled: August 23, 2010Date of Patent: March 26, 2013Assignees: Centre National de la Recherche Scientifique, Ecole PolytechniqueInventors: Pere Roca I Cabarrocas, Mario Moreno
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Patent number: 8383210Abstract: A method is described of depositing film of an amorphous or microcrystalline material, for example silicon, from a plasma on to a substrate. Microwave energy is introduced into a chamber as a sequence of discrete microwave pulses, a film precursors gas is introduced into the chamber as a sequence of discrete gas pulses, and gas for generating atomic hydrogen is supplied to the chamber at least during each microwave pulse. Each microwave pulse is followed in non-overlapping fashion with a precursor gas pulse, and each precursor gas pulse is followed by a period during which there is neither a microwave pulse nor a precursor gas pulse.Type: GrantFiled: October 26, 2007Date of Patent: February 26, 2013Assignees: Dow Corning Europe S.A., Ecole PolytechniqueInventors: Pere Roca I Cabarrocas, Pavel Bulkin, Dmitri Daineka, Patrick Leempoel, Pierre Descamps, Thibault Kervyn De Meerendre
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Patent number: 8349412Abstract: A method is described for forming a film of amorphous silicon (a-Si:H) on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure in the enclosure. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The substrate is held during deposition at a temperature in the range 200-600° C., preferably 225-350° C. and a bias voltage is applied to the substrate at a level to give rise to a sheath potential in the range ?30 to ?105V, preferably using a source of RF power in the range of 50-250 mW/cm2 of the area of the substrate holder.Type: GrantFiled: November 14, 2006Date of Patent: January 8, 2013Assignees: Ecole Polytechnique, Dow Corning CorporationInventors: Pere Roca I Cabarrocas, Pavel Bulkin, Dmitri Daineka, Thien Hai Dao, Patrick Leempoel, Pierre Descamps, Thibault Kervyn De Meerendre
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Publication number: 20120247539Abstract: The invention relates to a semiconductor device comprising: a crystalline semiconductor substrate (1) having a front face (1a) and a rear face (1b); a front passivation layer (3) placed on the front face (1a) of the substrate (1); a rear passivation layer (2) placed on the rear face (1b) of the substrate (1); a first metallization zone (10) placed on the rear passivation layer (2) and designed for collecting electrons; a second metallization zone designed for collecting holes, comprising: a surface portion (11) placed on the rear passivation layer (2); and an internal portion (12) passing through the rear passivation layer (2) and forming, in the substrate (1), a region in which the concentration of electron acceptors is greater than the rest of the substrate (1). The invention also relates to a module of photovoltaic cells using this device and to a process for manufacturing this device.Type: ApplicationFiled: December 10, 2010Publication date: October 4, 2012Applicants: TOTAL SA, ECOLE POLYTECHNIQUE, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUEInventor: Pére Roca i Cabarrocas
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Publication number: 20120208358Abstract: Method of fabricating a multilayer film having at least one ultrathin layer of crystalline silicon, the film being fabricated from a substrate having a crystalline structure and including a previously-cleaned surface. The method includes the steps of: a) exposing the cleaned surface to a radiofrequency plasma generated in a gaseous mixture of SiF4, hydrogen, and argon, so as to form an ultrathin layer of crystalline silicon having an interface sublayer in contact with the substrate and containing microcavities; b) depositing at least one layer of material on the ultrathin layer of crystalline silicon so as form a multilayer film, the multilayer film including at least one mechanically strong layer; and c) annealing the substrate covered in the multilayer film at a temperature higher than 400° C., thereby enabling the multilayer film to be separated from the substrate.Type: ApplicationFiled: October 15, 2010Publication date: August 16, 2012Applicants: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, ECOLE POLYTECHNIQUEInventors: Pere Roca I Cabarrocas, Mario Moreno
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Publication number: 20120146194Abstract: The invention relates to a method for texturing the surface of a gaseous phase silicon substrate, and to a textured silicon substrate for a solar cell. The method includes at least a step a) of exposing the surface to an SF6/O2 radiofrequency plasma for a duration of 2 to 30 minutes in order to produce a silicon substrate having a textured surface having pyramidal structures, the SF6/O2 ratio being 2 to 10. During step a) the power density generated using the radiofrequency plasma is greater than or equal to 2500 mW/cm2, and the SF6/O2 pressure in the reaction chamber is lower than or equal to 100 mTorrs, so as to produce a silicon substrate having a textured surface having inverted pyramidal structures.Type: ApplicationFiled: August 23, 2010Publication date: June 14, 2012Applicants: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, ECOLE POLYTECHNIQUEInventors: Pere Roca I Cabarrocas, Mario Moreno, Dimitri Daineka
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Publication number: 20120145185Abstract: A method for cleaning the surface of a silicon substrate, covered by a layer of silicon oxide includes: a) exposing the surface for 60 to 900 seconds to a radiofrequency plasma, generated from a fluorinated gas, to strip the silicon oxide layer and induce the adsorption of fluorinated elements on the substrate surface, the power density generated using the plasma being 10 mW/cm2 to 350 mW/cm2, the fluorinated gas pressure being 10 mTorrs to 200 mTorrs, and the substrate temperature being lower than or equal to 300° C.; and b) exposing the surface including the fluorinated elements for 5 to 120 seconds to a hydrogen radiofrequency plasma, to remove the fluorinated elements from the substrate surface, the power density generated using the plasma being 10 mW/cm2 to 350 mW/cm2, the hydrogen pressure being 10 mTorrs to 1 Torr, and the substrate temperature being lower than or equal to 300° C.Type: ApplicationFiled: August 23, 2010Publication date: June 14, 2012Applicants: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, ECOLE POLYTECHNIQUEInventors: Pere Roca I Cabarrocas, Mario Moreno