Abstract: The invention relates to a method for producing ohmic contacts, of type including a metal, a semiconductor and tin, including: a) forming a first layer (6), of an alloy of the semiconductor and of tin; b) then, on the first layer, forming a second layer (8), of said metal; c) laser annealing the first layer and the second layer at an energy density between 0.1 and 2 J/cm2.

Abstract: A method for crystallising an amorphous layer included in a stack, extending directly in contact with a crystalline layer of the stack by forming an interface with the crystalline layer, and having a first face opposite the interface, and having a melting threshold EM corresponding to the energy density to be provided to the amorphous layer to achieve its melting, for a thickness Ep of the amorphous layer defined between the first face and the interface, the method including a crystallisation annealing of the amorphous layer by subjecting it, by zones, to laser pulses, and in each zone, the laser pulses are emitted by series, each laser pulse having an energy density EDi different from one series to another so as to maintain the energy density of the pulses of each series below the melting threshold.

Abstract: Systems and methods for treating cellulite including an apparatus that applies or a method involving disrupting, stretching, re-orienting or tearing septa to eliminate or reduce the appearance of cellulite. In one approach, an expandable member is placed between tissue layers to stretch or tear septa connecting tissue layers between which fat deposits are contained.

Abstract: The invention relates to a method for forming a porous portion in a substrate, an implantation of ions in at least one region of a layer, for example based on a semiconductor material, so as to form a portion enriched with at least one gas in the implanted region, and then a laser annealing of the nanosecond type so as to form a porous portion. The use of the ion implantation makes it possible to dissociate the deposition of the layer based on semiconductor material from the incorporation of gas. A great variety of porous structures can be obtained by the method. These porous structures can be adapted for numerous applications according to the properties sought.

Abstract: Producing a semiconductor or piezoelectric on-insulator type substrate for RF applications which is provided with a porous layer under the BOX layer and under a layer of polycrystalline semiconductor material.

Abstract: Systems and methods for treating cellulite including an apparatus that applies or a method involving disrupting, stretching, re-orienting or tearing septa to eliminate or reduce the appearance of cellulite. In one approach, an expandable member is placed between tissue layers to stretch or tear septa connecting tissue layers between which fat deposits are contained.

Abstract: Systems and methods for treating cellulite including an apparatus that applies or a method involving separating septa to eliminate or reduce the appearance of cellulite. In one approach, an interventional tool is placed between tissue layers to engage and treat septa connecting tissue layers between which fat deposits are contained.

Abstract: Systems and methods for treating cellulite including an apparatus that applies or a method involving separating septa to eliminate or reduce the appearance of cellulite. In one approach, an interventional tool is placed between tissue layers to engage and treat septa connecting tissue layers between which fat deposits are contained.

Abstract: A method for transferring a thin layer from a donor substrate to a receiver substrate including the steps of implantation of species carried out in a uniform manner on the whole of the donor substrate to form therein an embrittlement plane which delimits the thin layer and a bulk part of the donor substrate, of placing in contact the donor substrate and the receiver substrate and of initiating and propagating a fracture wave along the embrittlement plane. The method comprises, before the placing in contact, a step of localised reduction of a capacity of the embrittlement plane to initiate the fracture wave. This step of localised reduction may be carried out by means of a localised laser annealing of the donor substrate.

Abstract: An optoelectronic device including a crystalline semiconductor layer based on GeSn and including a pin junction. This formed semiconductor layer includes a base portion; a single-crystal intermediate portion having an average value xpi1 of proportion of tin less than xps1, thus forming a barrier region against charge carriers flowing in an upper portion; and the single-crystal upper portion including a homogeneous medium with a proportion of tin xps1, and vertical structures having an average value xps2 of proportion of tin greater than xps1, thus forming regions for emitting or for receiving infrared radiation.

Abstract: A production method for a semi-conductor-on-insulator type multilayer stack includes ion implantation in a buried portion of a superficial layer of a support substrate, so as to form a layer enriched with at least one gas, intended to form a porous semi-conductive material layer, the thermal oxidation of a superficial portion of the superficial layer to form an oxide layer extending from the surface of the support substrate, the oxidation and the implantation of ions being arranged such that the oxide layer and the enriched layer are juxtaposed, and the assembly of the support substrate and of a donor substrate.

Abstract: The invention relates to a method of healing defects related to implantation of species in a donor substrate (1) made of a semiconducting material to form therein a plane of weakness (5) in it separating a thin layer (4) from a bulk part of the donor substrate. The method comprises a superficial amorphisation of the thin layer, followed by application of a heat treatment on the superficially amorphised thin layer. The method comprises application of laser annealing to the superficially amorphised thin layer after the heat treatment, to recrystallise it in the solid phase.

Abstract: Systems and methods for treating tissue including an apparatus that applies or a method involving separating septa to eliminate or reduce the appearance of cellulite or liposuction in combination with separating septa to eliminate or reduce the appearance of cellulite. In one approach, an interventional tool is placed between tissue layers to engage and treat tissue layers between which fat deposits are contained.

Abstract: Systems and methods for treating cellulite including an apparatus that applies or a method involving separating septa to eliminate or reduce the appearance of cellulite. In one approach, an interventional tool is placed between tissue layers to engage and treat septa connecting tissue layers between which fat deposits are contained.

Abstract: A method for manufacturing a semiconductor-on-insulator type substrate for radiofrequency applications is provided, including the steps of: directly bonding a support substrate of a single crystal material and a donor substrate including a thin layer of a semiconductor material, one or more layers of dielectric material being at a bonding interface thereof; transferring the thin layer onto the support substrate; and forming an electric charge trap region in the support substrate in contact with the one or more layers of the dielectric material present at the bonding interface, by transforming a buried zone of the support substrate into a polycrystal.

Abstract: A method for modifying a strain state of at least one semiconductor layer includes providing a support over which is arranged at least one stack of layers including the semiconductor layer and a fusible layer, arranged between the semiconductor layer and the support. The method also includes melting at least one portion of the fusible layer the passage of said at least one portion of the fusible layer from a solid state into a liquid state, the semiconductor layer remaining in the solid state during the melting step. A laser beam may be used for the melting. The melting with the laser beam may also cause the modification of the strain state of the semiconductor layer.

Abstract: Apparatus for delivering stents to body lumens include one or more tubular prostheses carried at the distal end of a catheter shaft, a sheath slidably disposed over the prostheses, and a guidewire tube extending from within the sheath to the exterior of the sheath through an exit port in a sidewall thereof. A guidewire extends slidably through the guidewire tube. The sheath can be moved relative to the catheter shaft and the guidewire tube to expose the prostheses for deployment. Methods of delivering stents are also provided.

Abstract: Systems and methods for treating cellulite including an apparatus that applies or a method involving separating septa to eliminate or reduce the appearance of cellulite. In one approach, an interventional tool is placed between tissue layers to engage and treat septa connecting tissue layers between which fat deposits are contained.

Abstract: Producing a semiconductor or piezoelectric on-insulator type substrate for RF applications which is provided with a porous layer under the BOX layer and under a layer of polycrystalline semiconductor material.

Abstract: The invention relates to a method for producing ohmic contacts, of type including a metal, a semiconductor and tin, including: a) forming a first layer (6), of an alloy of the semiconductor and of tin; b) then, on the first layer, forming a second layer (8), of said metal; c) laser annealing the first layer and the second layer at an energy density between 0.1 and 2 J/cm2.