Abstract: A method for producing a uniaxial stress state in a semiconductive layer, may include: providing a stack including a support, the semiconductive layer, and an inserted fuse layer; forming a stress donor layer on the semiconductive layer; partially altering the stress donor layer, modifying a first stress state of the layer to obtain a second stress state in one single direction; and melting the fuse layer, such that the stress donor layer transfers, by relaxation, the second stress state into the semiconductive layer.

Abstract: Systems and methods for aesthetic treatment of skin including an apparatus that applies or a method involving separating tissue to eliminate or reduce the appearance of unwanted features. In one approach, an interventional tool is placed between tissue layers to engage and treat connecting tissue layers. Focal fat tissue collection is conducted as needed independently or supplemental to the treatment of targeted septa.

Abstract: A method for modifying a strain state of at least one semiconductor layer includes providing a support over which is arranged at least one stack of layers including the semiconductor layer and a fusible layer, arranged between the semiconductor layer and the support. The method also includes melting at least one portion of the fusible layer including the passage of said at least one portion of the fusible layer from a solid state into a liquid state, the semiconductor layer remaining in the solid state during the melting step. A laser beam may be used for the melting. The melting with the laser beam may also cause the modification of the strain state of the semiconductor layer.

Abstract: Method for producing a metal-semiconductor alloy transistor source and drain comprising, in this order, the following steps: providing on a substrate (100) with an insulating layer (11) and a surface semiconductor layer (12) resting on the insulating layer (11): a transistor gate block (25) on this surface semiconductor layer (12) and insulating spacers (33) on either side of said gate block (25), amorphizing semiconductor regions (123) of said surface semiconductor layer (12) situated on either side of the gate block (25), whilst retaining at least one crystalline semiconductor zone (121) of the surface semiconductor layer (12) opposite the gate block (25), forming selectively with respect to said crystalline zone (121) of the surface semiconductor layer, metal-semiconductor alloy regions (125) in the amorphized semiconductor regions of the surface semiconductor layer (12).

Abstract: An optoelectronic device including a crystalline semiconductor layer based on GeSn and including a pin junction. This formed semiconductor layer includes a base portion; a single-crystal intermediate portion having an average value xpi1 of proportion of tin less than xps1, thus forming a barrier region against charge carriers flowing in an upper portion; and the single-crystal upper portion including a homogeneous medium with a proportion of tin xps1, and vertical structures having an average value xps2 of proportion of tin greater than xps1, thus forming regions for emitting or for receiving infrared radiation.

Abstract: Systems and methods for treating cellulite including an apparatus that applies or a method involving separating septa to eliminate or reduce the appearance of cellulite. In one approach, an interventional tool is placed between tissue layers to engage and treat septa connecting tissue layers between which fat deposits are contained.

Abstract: A method for producing a transistor comprising: providing on a support provided with a surface semiconductor layer and resting on an insulating layer: a gate block, insulating spacers on either side of this gate block, and so-called raised semiconductor regions, making amorphous the raised semiconductor regions and the portions of the superficial semiconductor layer located under these raised semiconductor regions and reaching the insulating layer, doping the raised semiconductor regions and said portions, carrying out a laser heat annealing by means of one or more laser pulses so as to produce a recrystallisation of said raised regions and of said portions while carrying out an activation of dopants in said regions and said portions.

Abstract: A method for manufacturing a semiconductor device including a first semiconductor zone optimised for electron conduction and a second semiconductor zone optimised for hole conduction, the method including providing a multilayer structure including a substrate and a silicon-germanium layer disposed on the substrate; defining in the multilayer structure a first region for containing the first semiconductor zone and a second region for containing the second semiconductor zone; subjecting the multilayer structure to laser annealing so as to modify a portion of the multilayer structure located in the first region, the portion including prior to laser annealing a part of the silicon-germanium layer, the portion including after the laser annealing a germanium-depleted part and a germanium-enriched part disposed on the germanium-depleted part, and etching the germanium-enriched part so as to expose the germanium-depleted part.

Abstract: A method for manufacturing a semiconductor device including a first semiconductor zone optimised for electron conduction and a second semiconductor zone optimised for hole conduction, the method including providing a multilayer structure including a substrate and a silicon-germanium layer disposed on the substrate; defining in the multilayer structure a first region for containing the first semiconductor zone and a second region for containing the second semiconductor zone, and subjecting the multilayer structure to laser annealing so as to modify a portion of the multilayer structure located in the second region, the portion including prior to laser annealing a part of the silicon-germanium layer, the portion having after laser annealing a germanium concentration gradient with a germanium concentration which increases towards an upper face of the portion.

Abstract: A method for manufacturing a field effect transistor including a silicon-germanium active layer and a gate oxide layer disposed on the active layer, the method including providing a stack including a substrate and a silicon-germanium first layer disposed on the substrate; forming the gate oxide layer on the stack; subjecting the stack to laser annealing so as to melt a region of the stack, the region including at least one part of the first layer, and recrystallising the molten region of the stack to obtain the silicon-germanium active layer in contact with the gate oxide layer, the active layer having a germanium concentration gradient.

Abstract: Systems and methods for treating cellulite including an apparatus that applies or a method involving separating septa to eliminate or reduce the appearance of cellulite. In one approach, an interventional tool is placed between tissue layers to engage and treat septa connecting tissue layers between which fat deposits are contained.

Abstract: Systems and methods for treating cellulite including an apparatus that applies or a method involving separating septa to eliminate or reduce the appearance of cellulite. In one approach, an interventional tool is placed between tissue layers to engage and treat septa connecting tissue layers between which fat deposits are contained.

Abstract: The invention relates to a method for producing ohmic contacts, of type including a metal, a semiconductor and tin, including: a) forming a first layer (6), of an alloy of the semiconductor and of tin; b) then, on the first layer, forming a second layer (8), of said metal; c) laser annealing the first layer and the second layer at an energy density between 0.1 and 2 J/cm2.

Abstract: A method for crystallising an amorphous layer included in a stack, extending directly in contact with a crystalline layer of the stack by forming an interface with the crystalline layer, and having a first face opposite the interface, and having a melting threshold EM corresponding to the energy density to be provided to the amorphous layer to achieve its melting, for a thickness Ep of the amorphous layer defined between the first face and the interface, the method including a crystallisation annealing of the amorphous layer by subjecting it, by zones, to laser pulses, and in each zone, the laser pulses are emitted by series, each laser pulse having an energy density EDi different from one series to another so as to maintain the energy density of the pulses of each series below the melting threshold.

Abstract: Systems and methods for treating cellulite including an apparatus that applies or a method involving disrupting, stretching, re-orienting or tearing septa to eliminate or reduce the appearance of cellulite. In one approach, an expandable member is placed between tissue layers to stretch or tear septa connecting tissue layers between which fat deposits are contained.

Abstract: The invention relates to a method for forming a porous portion in a substrate, an implantation of ions in at least one region of a layer, for example based on a semiconductor material, so as to form a portion enriched with at least one gas in the implanted region, and then a laser annealing of the nanosecond type so as to form a porous portion. The use of the ion implantation makes it possible to dissociate the deposition of the layer based on semiconductor material from the incorporation of gas. A great variety of porous structures can be obtained by the method. These porous structures can be adapted for numerous applications according to the properties sought.

Abstract: Producing a semiconductor or piezoelectric on-insulator type substrate for RF applications which is provided with a porous layer under the BOX layer and under a layer of polycrystalline semiconductor material.

Abstract: Systems and methods for treating cellulite including an apparatus that applies or a method involving disrupting, stretching, re-orienting or tearing septa to eliminate or reduce the appearance of cellulite. In one approach, an expandable member is placed between tissue layers to stretch or tear septa connecting tissue layers between which fat deposits are contained.

Abstract: Systems and methods for treating cellulite including an apparatus that applies or a method involving separating septa to eliminate or reduce the appearance of cellulite. In one approach, an interventional tool is placed between tissue layers to engage and treat septa connecting tissue layers between which fat deposits are contained.

Abstract: Systems and methods for treating cellulite including an apparatus that applies or a method involving separating septa to eliminate or reduce the appearance of cellulite. In one approach, an interventional tool is placed between tissue layers to engage and treat septa connecting tissue layers between which fat deposits are contained.