Patents by Inventor Pablo Cantu-Alejandro

Pablo Cantu-Alejandro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
    Patent number: 8575592
    Abstract: A Group III nitride based light emitting diode includes a p-type Group III nitride based semiconductor layer, an n-type Group III nitride based semiconductor layer that forms a P-N junction with the p-type Group III nitride based semiconductor layer, and a Group III nitride based active region on the n-type Group III nitride based semiconductor layer. The active region includes a plurality of sequentially stacked Group III nitride based wells including respective well layers. The plurality of well layers includes a first well layer having a first thickness and a second well layer having a second thickness. The second well layer is between the P-N junction and the first well layer, and the second thickness is greater than the first thickness.
    Type: Grant
    Filed: February 3, 2010
    Date of Patent: November 5, 2013
    Assignee: Cree, Inc.
    Inventors: Michael John Bergmann, Daniel Carleton Driscoll, Ashonita Chavan, Pablo Cantu-Alejandro, James Ibbotson
  • GROUP III NITRIDE BASED LIGHT EMITTING DIODE STRUCTURES WITH MULTIPLE QUANTUM WELL STRUCTURES HAVING VARYING WELL THICKNESSES
    Publication number: 20110187294
    Abstract: A Group III nitride based light emitting diode includes a p-type Group III nitride based semiconductor layer, an n-type Group III nitride based semiconductor layer that forms a P-N junction with the p-type Group III nitride based semiconductor layer, and a Group III nitride based active region on the n-type Group III nitride based semiconductor layer. The active region includes a plurality of sequentially stacked Group III nitride based wells including respective well layers. The plurality of well layers includes a first well layer having a first thickness and a second well layer having a second thickness. The second well layer is between the P-N junction and the first well layer, and the second thickness is greater than the first thickness.
    Type: Application
    Filed: February 3, 2010
    Publication date: August 4, 2011
    Inventors: Michael John Bergmann, Daniel Carleton Driscoll, Ashonita Chavan, Pablo Cantu-Alejandro, James Ibbetson