Abstract: The present invention discloses and claims the Silicon Carbide based Silicon structure comprising: (1) a Silicon Carbide substrate, (2) a Silicon semiconductor material having a top surface, and either bonded to the Silicon Carbide substrate via the bonding layer, or epitaxially grown on the Silicon Carbide substrate; and (3) at least one separation plug formed in the Silicon semiconductor material. The single bonding layer, or either layer of the double bonding layer, is selected from the group consisting of: {a Silicon dioxide layer; a Silicon layer; a carbon layer; a Silicon germanium (SiGe) layer; a tungsten silicide layer; a titanium suicide layer; and a cobalt silicide layer}. The separation plug extends from the top surface of the Silicon semiconductor material into the Silicon Carbide substrate at a separation plug depth level, and is configured to block the coupling between at least two adjacent active/passive structures formed in the Silicon semiconductor material.

Abstract: A microwave transistor structure having a step drain region comprising: (A) a substrate having a top surface; (B) a silicon semiconductor material of a first conductivity type, having a first dopant concentration and a top surface; (C) a conductive gate overlying and insulated from the top surface of the silicon semiconductor material; (D) at least one horizontal drain extension region of a second conductivity type and having a horizontal drain extension dopant concentration; (E) a step drain region formed in the silicon semiconductor material, and contacting the horizontal drain extension region; (F) a body region of the first conductivity type and having a body region dopant concentration; (G) a source region of the second conductivity type and having a source region dopant concentration; (H) a shield plate region formed on the top surface of the silicon semiconductor material over a portion of the horizontal drain extension region, the shield plate being adjacent and parallel to the horizontal drain extens

Abstract: A microwave transistor structure comprising: (1) a substrate having a top surface; (2) a silicon semiconductor material of a first conductivity type; (3) a conductive gate; (4) a channel region of a second conductivity type; (5) a drain region of the second conductivity type; (6) a body of the first conductivity type; (7) a source region of the second conductivity type; (8) a shield plate region formed on the top surface of the silicon semiconductor material over a portion of the channel region, wherein the shield plate is adjacent and parallel to the drain region, and to the conductive gate region; and (9) a conductive plug region formed in the body region of the silicon semiconductor material, wherein the conductive plug region connects a lateral surface of the body region to the top surface of the substrate.

Abstract: A lateral RF MOS transistor with at least one conductive plug structure comprising: (1) a semiconductor material of a first conductivity type having a first dopant concentration and a top surface; (2) a conductive gate overlying and insulated from the top surface of the semiconductor material; (3) at least two enhanced drain drift regions of the second conductivity type of the RF MOS transistor; the first region laying partially underneath the gate; the second enhanced drain drift region contacting the first enhanced drain drift region, the dopant concentration of the second enhanced drain drift region is higher than the dopant concentration of the first enhanced drain drift region; (4) a drain region of the second conductivity type contacting the second enhanced drain drift region; (5) a body region of said RF MOS transistor of the first conductivity type with the dopant concentration being at least equal to the dopant concentration of the semiconductor epi layer; (6) a source region of the second conductivi

Abstract: A lateral RF MOS transistor with at least one conductive plug structure comprising: (1) a semiconductor material of a first conductivity type having a first dopant concentration and a top surface; (2) a conductive gate overlying and insulated from the top surface of the semiconductor material; (3) at least two enhanced drain drift regions of the second conductivity type of the RF MOS transistor; the first region laying partially underneath the gate; the second enhanced drain drift region contacting the first enhanced drain drift region, the dopant concentration of the second enhanced drain drift region is higher than the dopant concentration of the first enhanced drain drift region; (4) a drain region of the second conductivity type contacting the second enhanced drain drift region; (5) a body region of said RF MOS transistor of the first conductivity type with the dopant concentration being at least equal to the dopant concentration of the semiconductor epi layer; (6) a source region of the second conductivi

Abstract: A lateral RF MOS transistor with at least one conductive plug structure comprising: (1) a semiconductor material of a first conductivity type having a first dopant concentration and a top surface; (2) a conductive gate overlying and insulated from the top surface of the semiconductor material; (3) at least two enhanced drain drift regions of the second conductivity type of the RF MOS transistor; the first region laying partially underneath the gate; the second enhanced drain drift region contacting the first enhanced drain drift region, the dopant concentration of the second enhanced drain drift region is higher than the dopant concentration of the first enhanced drain drift region; (4) a drain region of the second conductivity type contacting the second enhanced drain drift region; (5) a body region of said RF MOS transistor of the first conductivity type with the dopant concentration being at least equal to the dopant concentration of the semiconductor epi layer; (6) a source region of the second conductivi

Abstract: A microwave transistor structure comprising: (1) a substrate having a top surface; (2) a silicon semiconductor material of a first conductivity type, having a first dopant concentration and a top surface; (3) a conductive gate overlying and insulated from the top surface of the silicon semiconductor material; (4) a channel region of a second conductivity type and having a channel dopant concentration; (5) a drain region of the second conductivity type and having a drain dopant concentration greater than the channel region dopant concentration; (6) a body of the first conductivity type and having a body region dopant concentration; (7) a source region of the second conductivity type and having a source region dopant concentration; (8) a shield plate region formed on the top surface of the silicon semiconductor material over a portion of the channel region, wherein the shield plate is adjacent and parallel to the drain region, and to the conductive gate region; and wherein the shield plate extends above the top

Abstract: The present invention discloses and claims the silicon carbide based silicon structure comprising: (1) a silicon carbide substrate, (2) a silicon semiconductor material having a top surface, and either bonded to the silicon carbide substrate via the bonding layer, or epitaxially grown on the silicon carbide substrate; and (3) at least one separation plug formed in the silicon semiconductor material. The separation plug extends from the top surface of the silicon semiconductor material into the silicon carbide substrate at a separation plug depth level, and is configured to block the coupling between at least two adjacent active/passive structures formed in the silicon semiconductor material.

Abstract: A lateral RF MOS transistor with at least one conductive plug structure comprising: (1) a semiconductor material of a first conductivity type having a first dopant concentration and a top surface; (2) a conductive gate overlying and insulated from the top surface of the semiconductor material; (3) at least two enhanced drain drift regions of the second conductivity type of the RF MOS transistor; the first region laying partially underneath the gate; the second enhanced drain drift region contacting the first enhanced drain drift region, the dopant concentration of the second enhanced drain drift region is higher than the dopant concentration of the first enhanced drain drift region; (4) a drain region of the second conductivity type contacting the second enhanced drain drift region; (5) a body region of said RF MOS transistor of the first conductivity type with the dopant concentration being at least equal to the dopant concentration of the semiconductor epi layer; (6) a source region of the second conductivi

Abstract: A microwave transistor structure comprising: (a) a SiC substrate having a top surface; (b) a silicon semiconductor material of a first conductivity type overlaying the top surface of the semiconductor substrate and having a top surface; (c) a conductive gate overlying and insulated from the top surface of the silicon semiconductor material; (d) a channel region of the first conductivity type formed completely within the silicon semiconductor material including a channel dopant concentration; (e) a drain region of the second conductivity type formed in the silicon semiconductor material and contacting the channel region; (f) a body region of the first conductivity type and having a body region dopant concentration formed in the silicon semiconductor material under the conductive gate region; (g) a source region of the second conductivity type and having a source region dopant concentration formed in the silicon semiconductor material within the body region; (h) a shield plate region being adjacent and being pa