Patents by Inventor Pablo Docampo
Pablo Docampo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230197869Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p- type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer dis -posed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: ApplicationFiled: November 3, 2022Publication date: June 22, 2023Inventors: HENRY JAMES SNAITH, EDWARD JAMES WILLIAM CROSSLAND, ANDREW HEY, JAMES BALL, MICHAEL LEE, PABLO DOCAMPO
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Patent number: 11527663Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: GrantFiled: June 20, 2018Date of Patent: December 13, 2022Assignee: OXFORD UNIVERSITY INNOVATION LIMITEDInventors: Henry James Snaith, Edward James William Crossland, Andrew Hey, James Ball, Michael Lee, Pablo Docampo
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Publication number: 20220393048Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: ApplicationFiled: August 8, 2022Publication date: December 8, 2022Inventors: HENRY JAMES SNAITH, EDWARD JAMES WILLIAM CROSSLAND, ANDREW HEY, JAMES BALL, MICHAEL LEE, PABLO DOCAMPO
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Patent number: 11469338Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: GrantFiled: June 24, 2020Date of Patent: October 11, 2022Assignee: OXFORD UNIVERSITY INNOVATION LIMITEDInventors: Henry James Snaith, Edward James William Crossland, Andrew Hey, James Ball, Michael Lee, Pablo Docampo
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Patent number: 11258025Abstract: A solid state light-emitting device comprising: a first electrode coupled to a first charge injecting layer; a second electrode coupled to a second charge injecting layer; an emissive layer comprising a perovskite material, wherein the emissive layer is provided between the first and second charge injecting layers; and wherein the bandgaps of the first and second charge injecting layers are larger than the bandgap of the emissive perovskite layer.Type: GrantFiled: April 29, 2015Date of Patent: February 22, 2022Assignee: CAMBRIDGE ENTERPRISE LIMITEDInventors: Richard Henry Friend, Reza Saberi Moghaddam, Zhi Kuang Tan, Aditya Sadhanala, May Ling Lai, Pablo Docampo, Felix Deschler, Michael Price, Fabian Hanusch, Henry Snaith
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Publication number: 20200365748Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: ApplicationFiled: June 24, 2020Publication date: November 19, 2020Inventors: HENRY JAMES SNAITH, EDWARD JAMES WILLIAM CROSSLAND, ANDREW HEY, JAMES BALL, MICHAEL LEE, PABLO DOCAMPO
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Publication number: 20180315870Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: ApplicationFiled: June 20, 2018Publication date: November 1, 2018Inventors: HENRY JAMES SNAITH, EDWARD JAMES WILLIAM CROSSLAND, ANDREW HEY, JAMES BALL, MICHAEL LEE, PABLO DOCAMPO
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Patent number: 10069025Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: GrantFiled: September 17, 2013Date of Patent: September 4, 2018Assignee: OXFORD UNIVERSITY INNOVATION LIMITEDInventors: Henry James Snaith, Edward James William Crossland, Andrew Hey, James Ball, Michael Lee, Pablo Docampo
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Publication number: 20170054099Abstract: A solid state light-emitting device comprising: a first electrode coupled to a first charge injecting layer; a second electrode coupled to a second charge injecting layer; an emissive layer comprising a perovskite material, wherein the emissive layer is provided between the first and second charge injecting layers; and wherein the bandgaps of the first and second charge injecting layers are larger than the bandgap of the emissive perovskite layer.Type: ApplicationFiled: April 29, 2015Publication date: February 23, 2017Inventors: Richard Henry Friend, Reza Saberi Moghaddam, Zhi Kuang Tan, Aditya Sadhanala, May Ling Lai, Pablo Docampos, Felix Deschler, Michael Price, Fabian Hanusch, Henry Snaith
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Publication number: 20150249170Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.Type: ApplicationFiled: September 17, 2013Publication date: September 3, 2015Applicant: ISIS INNOVATION LIMITEDInventors: Henry James Snaith, Edward James William Crossland, Andrew Hey, James Ball, Michael Lee, Pablo Docampo
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Publication number: 20130199603Abstract: The invention provides a solid-state p-n heterojunction comprising an organic p-type material in contact with an n-type material wherein said heterojunction is sensitised by at least one sensitizing agent, characterised in that the device comprises a cathode separated from said n-type material by a porous barrier layer of at least one insulating material. Also provided are opto-electronic devices such as solar cells or photo-sensors comprising such a p-n heterojunction, and methods for the manufacture of such a heterojunction or device.Type: ApplicationFiled: March 11, 2011Publication date: August 8, 2013Applicant: ISIS INNOVATION LIMITEDInventors: Henry Snaith, Pablo Docampo