Abstract: This invention is for a hermetic piezoelectric accelerometer sensor that can operates at high temperatures without the degradation observed on the piezoelectric elements, due to Oxygen depletion of the piezoelectric materials, when they are exposed to high temperatures, in reducing atmospheres, or low partial Oxygen pressure, inside a sealed housing. When a piezoelectric element loses Oxygen, becomes more electrically conductive, and this severe loss in resistivity, exacerbated with the increase of the temperature, makes the sensor inoperable, unreliable, or with permanent damage. The accelerometer of this invention operates effectively over a wide range of temperatures, including high temperatures above 1600° F., depending of the piezoelectric element used on the construction. The housing of the accelerometer uses a small section of metal made with Silver (or Silver alloys) to allow Oxygen diffusion through the metal, when it is exposed to high temperature.

Abstract: This invention is for a hermetic piezoelectric accelerometer sensor that can operates at high temperatures without the degradation observed on the piezoelectric elements, due to Oxygen depletion of the piezoelectric materials, when they are exposed to high temperatures, in reducing atmospheres, or low partial Oxygen pressure, inside a sealed housing. When a piezoelectric element loses Oxygen, becomes more electrically conductive, and this severe loss in resistivity, exacerbated with the increase of the temperature, makes the sensor inoperable, unreliable, or with permanent damage. The accelerometer of this invention operates effectively over a wide range of temperatures, including high temperatures above 1600° F., depending of the piezoelectric element used on the construction. The housing of the accelerometer uses a small section of metal made with Silver (or Silver alloys) to allow Oxygen diffusion through the metal, when it is exposed to high temperature.

Abstract: A hermetic package for electronic components which is made of metallic silicon is disclosed. The package includes a plurality of silicon elements which are bonded together. In the first embodiment, a cavity is hollowed out in the cover to house the Application Specific Integrated Circuit oscillator and the resonator. In a second embodiment, the cavity is formed in the base member with a plurality of pedestal shelves to hold the resonator above and out of contact with the electrical circuitry for the oscillator and thermal controls.

Abstract: A piezoelectric circuit has a base crystal with electroplated electrodes, at least one of which has a beta emitter such as Nickel 63 vacuum plated thereon to provide a self-powering capability. The size of the radioactive power source will be selected to enable the resonator to function without the benefit of an external power source for some applications. In other instances, the radioactive power source will be sized to enable the resonator to produce higher amplitude output to reduce the level of phase noise and improve resolution.

Abstract: A hermetic package for electronic components which is made of metallic silicon is disclosed. The package includes a plurality of silicon elements which are bonded together. A metallic layer of platinum or gold is bonded to an internal surface of the hermetically sealed enclosure. While either metallic layer may serve as a heating element by subjecting the electronic circuit connected thereto with a large current, the platinum layer can also be used as a thermal sensor by passing a lower current there through. An internal heater is included to stabilize the performance of the electronic components.

Abstract: A hermetic package for electronic components which is made of metallic silicon is disclosed. The package creates a cavity for receiving the electronic component, preferably a piezoelectric device, which provides a evacuated environment in the range of 1×10?5 to 1×10?11 torr. In a first embodiment, the single crystal metallic silicon is p-doped to make it electrically conductive, obviating the need for lead wires which could compromise the hermeticity of the package. Silicon-to-silicon bonding is preferably accomplished using brazing of the cover to the base member using gold indium eutectic alloy at 495° C. A method of making a surface mountable electronic component having an internal hermetic environment is also described.

Abstract: A hermetic package for electronic components which is made of metallic silicon is disclosed. The package creates a cavity for receiving the electronic component, preferably a piezoelectric device, which provides a evacuated environment in the range of 1×10?5 to 1×10?11 torr. In a first embodiment, the single crystal metallic silicon is p-doped to make it electrically conductive, obviating the need for lead wires which could compromise the hermeticity of the package. Silicon-to-silicon bonding is preferably accomplished using brazing of the cover to the base member using gold indium eutectic alloy at 495° C. A method of making a surface mountable electronic component having an internal hermetic environment is also described.