Patents by Inventor Paddy Krishnaraj

Paddy Krishnaraj has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chamber clean method using remote and in situ plasma cleaning systems
    Patent number: 7588036
    Abstract: A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber. According to one embodiment the process comprises performing a substrate processing operation on the substrate within the substrate processing chamber and then transferring the substrate out of the substrate processing chamber; flowing a first etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to remove a first portion of the unwanted deposition build-up; and thereafter, flowing a second etchant gas into the substrate processing chamber and forming a plasma within the substrate processing chamber from the second gas in order to remove a second portion of the unwanted deposition build-up.
    Type: Grant
    Filed: July 1, 2002
    Date of Patent: September 15, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Zhenjiang Cui, Michael S. Cox, Canfeng Lai, Paddy Krishnaraj
  • Chamber clean method using remote and in situ plasma cleaning systems
    Publication number: 20040000321
    Abstract: A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber. According to one embodiment the process comprises performing a substrate processing operation on the substrate within the substrate processing chamber and then transferring the substrate out of the substrate processing chamber; flowing a first etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to remove a first portion of the unwanted deposition build-up; and thereafter, flowing a second etchant gas into the substrate processing chamber and forming a plasma within the substrate processing chamber from the second gas in order to remove a second portion of the unwanted deposition build-up.
    Type: Application
    Filed: July 1, 2002
    Publication date: January 1, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Zhenjiang Cui, Michael S. Cox, Canfeng Lai, Paddy Krishnaraj